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Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 9
Technical content
Features
- Pb−Free, Halogen Free and RoHS compliant.
- Low RDS(on) to Minimize Conduction Losses.
- Ohmic Region Good RDS(on) Ratio.
- Optimized Gate Charge to Minimize Switching Losses.
Applications
- Protection Circuits Applications.
- Logic/Load Switch Circuits Applications. ABSOLUTE MAXIMUM RATINGS (T A = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage V DS -20 V Gate-Source Voltage V GS ±12 V Continuous Drain Current4 TC = 25 °C ID -108 A TC = 100 °C -68 TA = 25 °C -24 TA = 70 °C -19 Pulsed Drain Current1 I DM -200 Avalanche Current I AS -53 Avalanche Energy L = 0.1mH E AS 140 mJ Power Dissipation3 TC = 25 °C PD W TC = 100 °C 27 TA = 25 °C 3.5 TA = 70 °C 2.2 Operating Junction & Storage Temperature Range T j, Tstg -55 to 150 °C PRODUCT SUMMARY V(BR)DSS R DS(ON) I D -20V 3.5mΩ -108 G. GATE D. DRAIN S. SOURCE
P-Channel Logic Level Enhancement Mode Field Effect Transistor PK5A7BA P D F N 5 x 6 P Halogen-Free & Lead-Free NIKO-SEM G-30-1 REV1.2 THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient2 t ≦10s RJA 35 °C / W Junction-to-Ambient2 Steady-State RJA 50 Junction-to-Case Steady-State RJC 1.8 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25° C. The value in any given application depends on the user's specific board design. 3The Power dissipation is based on RJA t ≦10s value. 4Package limitation current is 50A. ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V (BR)DSS VGS = 0V, ID = -250A -20 V Gate Threshold Voltage V GS(th) VDS = VGS, ID = -250A -0.6 -0.7 -1.1 Gate-Body Leakage I GSS V DS = 0V, VGS = ±12V ±100 nA Zero Gate Voltage Drain Current I DSS VDS = -16V, VGS = 0V -1 uAVDS = -10V, VGS = 0V, TJ = 125 °C -10 Drain-Source On-State Resistance1 RDS(ON) VGS = -10V, ID = -20A 2.6 3.5 mΩVGS = -4.5V, ID = -20A 3.1 4 Forward Transconductance1 g fs V DS = -5V, ID = -20A 50 S DYNAMIC Input Capacitance C iss VGS = 0V, VDS = -10V, f = 1MHz 6383 pFOutput Capacitance C oss 927 Reverse Transfer Capacitance C rss 793 Gate Resistance Rg V GS = 0V, VDS = 0V, f = 1MHz 3 Ω Total Gate Charge2 Q g VDS = -10V, VGS = -10V , ID = -20A 161 nCGate-Source Charge2 Q gs 6.3 Gate-Drain Charge2 Q gd 21
P-Channel Logic Level Enhancement Mode Field Effect Transistor PK5A7BA P D F N 5 x 6 P Halogen-Free & Lead-Free NIKO-SEM G-30-1 REV1.2 Turn-On Delay Time2 t d(on) VDS = -10V, ID -20A, VGS = -10V, RGS = 6Ω nS Rise Time2 t r 12 Turn-Off Delay Time2 t d(off) 350 Fall Time2 t f 136 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current I S -53 A Forward Voltage1 V SD I F = -20A, VGS = 0V -1.3 V Reverse Recovery Time t rr IF = -20A , dlF/dt = 100 A / S 75 nS Reverse Recovery Charge Q rr 61 nC 1Pulse test : Pulse Width 300 sec, Duty Cycle 2％. 2Independent of operating temperature.
P-Channel Logic Level Enhancement Mode Field Effect Transistor PK5A7BA P D F N 5 x 6 P Halogen-Free & Lead-Free NIKO-SEM G-30-1 REV1.2 0.000 0.002 0.004 0.006 0.008 0.010 0 6 12 18 24 30 VGS=-10V VGS=-4.5V VGS=-2.5V 0.002 0.004 0.006 0.008 0.01 02468 1 0 ID=-20A Output Characteristics -ID, Drain-To-Source Current(A) Transfer Characteristics -ID, Drain-To-Source Current(A) -VGS, Gate-To-Source Voltage(V) -VDS, Drain-To-Source Voltage(V) Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Capacitance Characteristic C , Capacitance(pF) -VDS, Drain-To-Source Voltage(V) On-Resistance VS Temperature On-Resistance VS Gate-To-Source RDS(ON)ON-Resistance(OHM) -VGS, Gate-To-Source Voltage(V) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) -ID , Drain-To-Source Current(A) 25℃125℃ -20℃ 0 0.6 1.2 1.8 2.4 3 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 VGS=-10V ID=-20A CISS COSS CRSS 1000 2000 3000 4000 5000 6000 7000 8000 0 5 10 15 20 25 VGS=-1.5VVGS=-1.6V 012345 VGS=-10V VGS=-9V VGS=-8V VGS=-7V VGS=-6V VGS=-4.5V VGS=-2.5V
P-Channel Logic Level Enhancement Mode Field Effect Transistor PK5A7BA P D F N 5 x 6 P Halogen-Free & Lead-Free NIKO-SEM G-30-1 REV1.2 DC 100ms 10ms 1ms 0.1 100 1000 0.1 1 10 100 NOTE : 1.VGS= -10V 2.TA=25˚C 3.RθJA = 50˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) Gate charge Characteristics Qg , Total Gate Charge(nC) -VGS , Gate-To-Source Voltage(V) Source-Drain Diode Forward Voltage -VSD, Source-To-Drain Voltage(V) -IS , Source Current(A) Safe Operating Area Single Pu lse Maximum Power Dissipation -ID , Drain Current(A) Power(W) Single Pulse Time(s) -VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration[sec] 0 34 68 102 136 170 VDS=-10V ID=-20A 25℃125℃ 100 120 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 50˚C/W TA=25˚C single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 50 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA
P-Channel Logic Level Enhancement Mode Field Effect Transistor PK5A7BA P D F N 5 x 6 P Halogen-Free & Lead-Free NIKO-SEM G-30-1 REV1.2 Package Dimension PDFN 5x6P MECHANICAL DATA Dimension mm Dimension mm A 4.8 5.15 J 3.34 3.9 B 5.42 5.9 K 0.9 C 5.9 6.35 L 0.38 0.711 D 0.3 0.51 M 0° 12° F 0.8 1 1.2 O 0.05 0.36 G 0.15 0.35 P 0.05 0.25 H 3.67 4.31 S 3.73 4.19 I 0.38 0.71 A B C D H E I J K L M F N O P 4.6 1.27 0.55 3.81.140.86 6.4 0.6 S G
P-Channel Logic Level Enhancement Mode Field Effect Transistor PK5A7BA P D F N 5 x 6 P Halogen-Free & Lead-Free NIKO-SEM G-30-1 REV1.2 Marking Information:(Please see the corresponding data sheet) 零件 文字面說明1. Marking 零件 說明2. Part number P K 5A7 B A Power MOSFET Device Name A : Version B : Single PK5A7BA K : PDFN 5x6 Package Device Name NIKO-SEM LOGO Lot.NoXXXXXXXXX NIKOS Tape&Reel Information:3000pcs/Reel 附註:All Dimension in milimeter 12.00±0.3 5.50±0.05 1.75±0.1 2.00±0.05 4.00±0.10 8.00±0.10 1.50+0.1 -0.0 1.5+1.0 -0.1 R0.3 MAX R165±0.5 R159 2.2 1397.0±1.0 1.4±0.1 TRL FEED DIRECYION Pin1
P-Channel Logic Level Enhancement Mode Field Effect Transistor PK5A7BA P D F N 5 x 6 P Halogen-Free & Lead-Free NIKO-SEM G-30-1 REV1.2 Lot.No. & Date Code rule 1.LOT.NO. M N 15M21 03 Foundry site Assembly site 2.Date Code D Y M X XXX Assembly site M : Month (A:Jan , B:Feb , C:Mar ,D :Apr ,E:May ,F:Jun,G:Jul,H:Aug,I:Sep,J:Oct,K:Nov,L:Dec.) Order series no. & Sub-lot No Order series no. #8~9 Sub-lot No Week Week Device Name XX Y WW 3.Date Code (for Small package) Y : Year (N : 2011, O : 2012, P : 2013, Q : 2014, R : 2015, S : 2016, T : 2017, U : 2018 ...etc) Y : Year (9 : 2009,A : 2010, B : 2011, C : 2012, D : 2013, E : 2014, F : 2015, G : 2016, H : 2017, I : 2018...etc)
P-Channel Logic Level Enhancement Mode Field Effect Transistor PK5A7BA P D F N 5 x 6 P Halogen-Free & Lead-Free NIKO-SEM G-30-1 REV1.2 Label rule 標籤內容 (Label content)
1 Label Size 30 * 90 mm
2 Font style
(Or any font capable of being distinguished for Letter O and digital 0, and for G and Q))
3 NIKO-SEM Height: 4 mm
4 NIKO SEMICONDUCTOR
CO., LTD. Height: 1 mm
5 Package Height: 2 mm
6 Date Height: 2 mm Shipping date: YYYY/MM/DD, ex. 2008/09/12 7 Device Height: 3 mm (Max: 16 Digit) Device Name not including Rev.
8 Lot Height: 3 mm (Max: 9 Digit) Sub lot
9 D/C Height: 3 mm (Max: 7 Digit)
10 QTY Height: 3 mm (Max: 6 Digit) Thousand mark is no needed
11 Pb Free label
Diameter: 1 cm bottom color: Green Font color: Black Font style: Arial
12 Halogen Free label
Diameter: 1 cm bottom color: Green Font color: Black Font style: Arial
13 Scan info
Device / Lot / D/C / QTY , Insert “ / “ between every parts. for example: P3055LDG/G12345601/GGG2301/2000 DPI (Dots per inch): Over 300 dpi Code : Code 128 Height: 6 mm at least 3 11、12 P b G