PK555BA NIKOSEM | Alldatasheet
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P-Channel Logic Level Enhancement Mode Field Effect Transistor PK555BA PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM E-43-1 REV1.0 D1D1 S1#1 D1 D1 S1 S1 G1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current TC = 25 °C ID -19 A TC = 100 °C -12 TA = 25 °C -7.8 TA = 70 °C -6.2 Pulsed Drain Current1 IDM -50 Avalanche Current IAS -19.3 Avalanche Energy L = 0.1mH EAS 18.6 mJ Power Dissipation3 TC = 25 °C PD W TC = 100 °C 7.9 TA = 25 °C 3.1 TA = 70 °C 2 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient2 t ≦10s RJA 40 °C / W Steady-State RJA 63 Junction-to-Case Steady-State RJC 6.3 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25° C. The value in any given application depends on the user's specific board design. 3The Power dissipation is based on RJA t ≦10s value. PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -30V 28mΩ -19A G S D G : GATE D : DRAIN S : SOURCE
P-Channel Logic Level Enhancement Mode Field Effect Transistor PK555BA PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM E-43-1 REV1.0 ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250A -30 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250A -0.8 -1.5 -2.5 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = -24V, VGS = 0V -1 uA VDS = -20V, VGS = 0V, TJ = 125 °C -10 Drain-Source On-State Resistance1 RDS(ON) VGS = -4.5V, ID = -6A 26 45 mΩ VGS = -10V, ID = -6A 16 28 Forward Transconductance1 gfs VDS = -5V, ID = -6A 22 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = -15V, f = 1MHz 963 pF Output Capacitance Coss 134 Reverse Transfer Capacitance Crss 118 Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 10 Ω Total Gate Charge2 Qg(VGS=-10V) VDS =-15V, ID = -6A nC Qg(VGS=-4.5V) 10.8 Gate-Source Charge2 Qgs 2.4 Gate-Drain Charge2 Qgd 5.4 Turn-On Delay Time2 td(on) VDS = -15V, ID -6A, VGS = -10V, RGS = 6Ω nS Rise Time2 tr 18 Turn-Off Delay Time2 td(off) 40 Fall Time2 tf 26 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current IS -20 A Forward Voltage1 VSD IF = -6A, VGS = 0V -1 V Reverse Recovery Time trr IF = -6A , dlF/dt = 100 A / S 11 nS Reverse Recovery Charge Qrr 3.3 nC 1Pulse test : Pulse Width 300 sec, Duty Cycle 2％. 2Independent of operating temperature.
P-Channel Logic Level Enhancement Mode Field Effect Transistor PK555BA PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM E-43-1 REV1.0 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 VGS=-10V ID=-6A CISS COSS CRSS 200 400 600 800 1000 1200 0 5 10 15 20 25 30 25℃ 125℃ -20℃ 0 1 2 3 4 5 0.02 0.04 0.06 0.08 0.1 2 4 6 8 10 ID=-6A 0.01 0.02 0.03 0.04 0.05 0 6 12 18 24 30 VGS=-10V VGS=-4.5V 0 1 2 3 4 5 6 VGS=-10V VGS=-9V VGS=-8V VGS=-7V VGS=-6V VGS=-5V VGS=-4.5V VGS=-2.5V VGS=-3V Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Capacitance Characteristic C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) On-Resistance VS Temperature On-Resistance VS Gate-To-Source Voltage RDS(ON)ON-Resistance(OHM) VGS, Gate-To-Source Voltage(V) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) ID , Drain-To-Source Current(A)
P-Channel Logic Level Enhancement Mode Field Effect Transistor PK555BA PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM E-43-1 REV1.0 single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 63 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 63 ˚C/W TA=25˚C DC 100ms 10ms 1ms 0.01 0.1 100 0.1 1 10 100 NOTE : 1.VGS= -10V 2.TA=25˚C 3.RθJA = 63˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) 25℃ 125℃ 100 0 5 10 15 20 25 VDS=-15V ID=-6A Gate charge Characteristics Characteristics Qg , Total Gate Charge(nC) VGS , Gate-To-Source Voltage(V) Source-Drain Diode Forward Voltage VSD, Source-To-Drain Voltage(V) IS , Source Current(A) Safe Operating Area Single Pulse Maximum Power Dissipation ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration[sec]