PK552DX

PK552DX NIKOSEM | Alldatasheet

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REV 1.0 D-37-3 Dual N-Channel Enhancement Mode Field Effect Transistor PK552DX PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM D1 D1 D2 D2 S1 G1 S2 G2#1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±8 V Continuous Drain Current3 TC = 25 °C ID A TC = 100 °C 36 Pulsed Drain Current1 IDM 70 Continuous Drain Current TA = 25 °C ID TA = 70 °C 14 Avalanche Current IAS 40 Avalanche Energy L = 0.1mH EAS 79 mJ Power Dissipation TC = 25 °C PD W TC = 100 °C 12.5 Power Dissipation TA = 25 °C PD 2.9 W TA = 70 °C 1.8 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient2 RJA 43 °C / W Junction-to-Case RJC 4 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. 3Package limitation current is 22A. G. GATE D. DRAIN S. SOURCE PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20V 5.7mΩ 56A G D S

REV 1.0 D-37-3 Dual N-Channel Enhancement Mode Field Effect Transistor PK552DX PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 20 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 0.3 0.7 1 Gate-Body Leakage IGSS VDS = 0V, VGS = ±8V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = 16V, VGS = 0V 1 VDS = 10V, VGS = 0V, TJ = 70 °C 10 Drain-Source On-State Resistance1 RDS(ON) VGS = 4.5V, ID = 17A 4.4 5.7 mΩ VGS = 2.5V, ID = 17A 4.9 6.2 Forward Transconductance1 gfs VDS = 5V, ID = 17A 100 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = 10V, f = 1MHz 4120 pF Output Capacitance Coss 481 Reverse Transfer Capacitance Crss 409 Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 1 Ω Total Gate Charge2 Qg VGS = 4.5V VDS = 10V , ID = 17A 48.2 nC VGS = 2.5V 28.8 Gate-Source Charge2 Qgs 6 Gate-Drain Charge2 Qgd 14 Turn-On Delay Time2 td(on) VDS = 10V , ID  17A, VGS = 4.5V, RGEN =6Ω nS Rise Time2 tr 25 Turn-Off Delay Time2 td(off) 180 Fall Time2 tf 85 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current3 IS 24 A Forward Voltage1 VSD IF = 17A, VGS = 0V 1.3 V Reverse Recovery Time trr IF = 17A, dlF/dt = 100A / S 25 nS Reverse Recovery Charge Qrr 14 nC 1Pulse test : Pulse Width  300 sec, Duty Cycle  2％. 2Independent of operating temperature. 3Package limitation current is 22A.

REV 1.0 D-37-3 Dual N-Channel Enhancement Mode Field Effect Transistor PK552DX PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) TJ , Junction Temperature(˚C) Capacitance Characteristic VDS, Drain-To-Source Voltage(V) Gate charge Characteristics Characteristics Qg , Total Gate Charge(nC) VGS , Gate-To-Source Voltage(V) Source-Drain Diode Forward Voltage VSD, Source-To-Drain Voltage(V) IS , Source Current(A) On-Resistance VS Temperature 0 0.6 1.2 1.8 2.4 3 Normalized Drain to Source ON-Resistance C , Capacitance(pF) 25℃ 125℃ -20℃ CISS COSS CRSS 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 0 5 10 15 20 25 30 0 10 20 30 40 50 VDS=10V ID=17A 25℃ 150℃ 0.1 100 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 VGS=4.5V ID=17A 0 0.6 1.2 1.8 2.4 3 VGS=10V VGS=4.5V VGS=2.5V VGS=1.8V VGS=1.6V VGS=1.5V VGS=1.4V VGS=1.3V VGS=1.2V

REV 1.0 D-37-3 Dual N-Channel Enhancement Mode Field Effect Transistor PK552DX PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM Safe Operating Area Single Pulse Maximum Power Dissipation Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) T1 , Square Wave Pulse Duration[sec] single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 43 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 43˚C/W TA=25˚C DC 100ms 10ms 1ms 0.1 100 0.1 1 10 100 NOTE : 1.VGS= 4.5V 2.TA=25˚C 3.RθJA = 43˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON)