PI517BZ NIKOSEM | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
REV 1.0 E-19-3 P-Channel Enhancement Mode Field Effect Transistor PI517BZ TO-251(IS) Halogen-Free & Lead-Free NIKO-SEM 1 2 3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current2 TC = 25 °C ID -55 A TC = 100 °C -35 Pulsed Drain Current1 IDM -150 Avalanche Current IAS -38 Avalanche Energy L = 0.1mH EAS 72 mJ Power Dissipation TC = 25 °C PD 62 W TC = 100 °C 25 Junction & Storage Temperature Range TJ, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case RJC 2 °C / W Junction-to-Ambient RJA 62.5 1Pulse width limited by maximum junction temperature. 2Package limitation current is 40A. ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A -30 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A -1 -1.7 -3 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = -24V, VGS = 0V -1 VDS = -20V, VGS = 0V, TJ = 125 °C -10 PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -30V 12mΩ -55A G S D 1. GATE 2. DRAIN 3. SOURCE
REV 1.0 E-19-3 P-Channel Enhancement Mode Field Effect Transistor PI517BZ TO-251(IS) Halogen-Free & Lead-Free NIKO-SEM Drain-Source On-State Resistance1 RDS(ON) VGS = -4.5V, ID = -9A 15.4 19 mΩ VGS = -10V, ID = -12A 9.8 12 Forward Transconductance1 gfs VDS = -5V, ID = -12A 31 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = -15V, f = 1MHz 2740 pF Output Capacitance Coss 376 Reverse Transfer Capacitance Crss 321 Gate Resistance Rg VGS =0V, VDS = 0V, f = 1MHz 2.6 Ω Total Gate Charge2 Qg (VGS=10V) VDS = -15V , VGS = -10V, ID = -12A nC Qg(VGS=4.5V) 28 Gate-Source Charge2 Qgs 8.7 Gate-Drain Charge2 Qgd 13 Turn-On Delay Time2 td(on) VDS = -15V , ID 12A, VGS = -10V, RGEN =6Ω nS Rise Time2 tr 18 Turn-Off Delay Time2 td(off) 38 Fall Time2 tf 22 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current3 IS -51 A Forward Voltage1 VSD IF = -12A, VGS = 0V -1.2 V Reverse Recovery Time trr IF = -12A, dlF/dt = 100A / S 20 nS Reverse Recovery Charge Qrr 12 nC 1Pulse test : Pulse Width 300 sec, Duty Cycle 2%. 2Independent of operating temperature. 3Package limitation current is 40A.
REV 1.0 E-19-3 P-Channel Enhancement Mode Field Effect Transistor PI517BZ TO-251(IS) Halogen-Free & Lead-Free NIKO-SEM 25℃ 125℃ 100 1,000 0 12 24 36 48 60 VDS=-15V ID=-12A 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 VGS=-10V ID=-12A 25℃ 125℃ -20℃ 0 1 2 3 4 5 0 1 2 3 4 5 6 VGS=-10V VGS=-9V VGS=-8V VGS=-7V VGS=-6V VGS=-5V VGS=-4.5V VGS=-3V VGS=-3.5V VGS=-2.5V Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) TJ , Junction Temperature(˚C) Capacitance Characteristic VDS, Drain-To-Source Voltage(V) Gate charge Characteristics Characteristics Qg , Total Gate Charge(nC) VGS , Gate-To-Source Voltage(V) Source-Drain Diode Forward Voltage VSD, Source-To-Drain Voltage(V) IS , Source Current(A) On-Resistance VS Temperature CISS COSS CRSS 500 1000 1500 2000 2500 3000 3500 0 5 10 15 20 25 30 Normalized Drain to Source ON-Resistance C , Capacitance(pF)
REV 1.0 E-19-3 P-Channel Enhancement Mode Field Effect Transistor PI517BZ TO-251(IS) Halogen-Free & Lead-Free NIKO-SEM DC 100ms 10ms 1ms 100 1000 1 10 100 NOTE : 1.VGS= -10V 2.TC=25˚C 3.RθJC = 2 ˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) 140 210 280 350 0.001 0.01 0.1 1 10 100 Single Pulse RθJC = 2 ˚C/W TC=25˚C Safe Operating Area Single Pulse Maximum Power Dissipation Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJC = 2 ℃/W 3.TJ-TC = P*RthJC(t) 4.RthJC(t) = r(t)*RthJC ID , Drain Current(A) Power(W) T1 , Square Wave Pulse Duration[sec]