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REV 1.0 G-03-5 N-Channel Enhancement Mode Field Effect Transistor PI504BZ TO-251(IS) Halogen-Free & Lead-Free NIKO-SEM 123 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage V DS 30 V Gate-Source Voltage V GS ±20 V Continuous Drain Current2 TC = 25 °C ID A TC = 100 °C 29.7 Pulsed Drain Current1 I DM 150 Avalanche Current I AS 24 Avalanche Energy L = 0.1mH E AS 29 mJ Power Dissipation TC = 25 °C PD 35.7 W TC = 100 °C 14.3 Junction & Storage Temperature Range T J, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case RJC 3.5 °C / W Junction-to-Ambient RJA 62.5 1Pulse width limited by maximum junction temperature. 2Package limitation current is 30A. ELECTRICAL CHARACTERISTICS (T J = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITMIN TYP MAX STATIC Drain-Source Breakdown Voltage V (BR)DSS VGS = 0V, ID = 250A 30 V Gate Threshold Voltage V GS(th) VDS = VGS, ID = 250A 1 1.7 3 Gate-Body Leakage I GSS V DS = 0V, VGS = ±20V ±100 nA Zero Gate Voltage Drain Current I DSS VDS = 24V , VGS = 0V 1 VDS = 20V, VGS = 0V, TJ = 125 °C 10 Drain-Source On-State Resistance1 RDS(ON) VGS = 4.5V, ID = 15A 10.8 12 mΩ VGS = 10V , ID = 20A 7.9 9 1. GATE 2. DRAIN 3. SOURCE PRODUCT SUMMARY V(BR)DSS R DS(ON) I D 30V 9mΩ 47A G D S
REV 1.0 G-03-5 N-Channel Enhancement Mode Field Effect Transistor PI504BZ TO-251(IS) Halogen-Free & Lead-Free NIKO-SEM Forward Transconductance1 g fs V DS = 10V, ID = 20A 40 S DYNAMIC Input Capacitance C iss VGS = 0V, VDS = 15V, f = 1MHz 597 pFOutput Capacitance C oss 157 Reverse Transfer Capacitance C rss 86 Gate Resistance R g V GS = 0V, VDS = 0V, f = 1MHz 3.3 Ω Total Gate Charge2 Q g VGS=10V V DS = 15V, ID = 20A 13.4 nC VGS=4.5V 7.2 Gate-Source Charge2 Q gs 1.9 Gate-Drain Charge2 Q gd 4.3 Turn-On Delay Time2 t d(on) VDS = 15V ID 20A, VGS = 10V, RGEN =6Ω nS Rise Time2 t r 15 Turn-Off Delay Time2 t d(off) 34 Fall Time2 t f 16 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current3 I S 47 A Forward Voltage1 V SD I F = 20A, VGS = 0V 1.2 V Reverse Recovery Time t rr IF = 20A, dlF/dt = 100A / S 15 nS Reverse Recovery Charge Q rr 5 nC 1Pulse test : Pulse Width 300 sec, Duty Cycle 2％. 2Independent of operating temperature. 3Package limitation current is 30A
REV 1.0 G-03-5 N-Channel Enhancement Mode Field Effect Transistor PI504BZ TO-251(IS) Halogen-Free & Lead-Free NIKO-SEM Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) TJ , Junction Temperature(˚C) Capacitance Characteristic VDS, Drain-To-Source Voltage(V) Gate charge Characteristics Qg , Total Gate Charge(nC) VGS , Gate-To-Source Voltage(V) Source-Drain Diode Forward Voltage VSD, Source-To-Drain Voltage(V) IS , Source Current(A) On-Resistance VS Temperature Normalized Drain to Source ON-Resistance C , Capacitance(pF) 012345 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V VGS=3.5V VGS=3V 0369 1 2 1 5 VDS=15V ID=20A 012345 25℃150℃ 0.1 100 CISS COSS CRSS 100 200 300 400 500 600 700 800 0 5 10 15 20 25 30 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=20A 25℃ -20℃ 125℃
REV 1.0 G-03-5 N-Channel Enhancement Mode Field Effect Transistor PI504BZ TO-251(IS) Halogen-Free & Lead-Free NIKO-SEM Safe Operating Area Single Pulse Maximum Power Dissipation Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) T1 , Square Wave Pulse Duration[sec] 100 120 140 0.001 0.01 0.1 1 10 100 Single Pulse RθJC = 3.5˚C/W TC=25˚C single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJC = 3.5 ℃/W 3.TJ-TC = P*RthJC(t) 4.RthJC(t) = r(t)*RthJC DC 100ms 10ms 1ms 0.1 100 1000 0.1 1 10 100 NOTE : 1.VGS= 10V 2.TC=25˚C 3.RθJC = 3.5˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON)
REV 1.0 G-03-5 N-Channel Enhancement Mode Field Effect Transistor PI504BZ TO-251(IS) Halogen-Free & Lead-Free NIKO-SEM
REV 1.0 G-03-5 N-Channel Enhancement Mode Field Effect Transistor PI504BZ TO-251(IS) Halogen-Free & Lead-Free NIKO-SEM
REV 1.0 G-03-5 N-Channel Enhancement Mode Field Effect Transistor PI504BZ TO-251(IS) Halogen-Free & Lead-Free NIKO-SEM
REV 1.0 G-03-5 N-Channel Enhancement Mode Field Effect Transistor PI504BZ TO-251(IS) Halogen-Free & Lead-Free NIKO-SEM