PG8E10AF NIKOSEM | Alldatasheet

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REV 1.0 L-10-5 N-Channel Enhancement Mode Field Effect Transistor PG8E10AF TO-220F Halogen-Free & Lead-Free NIKO-SEM PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 100V 8.5mΩ 43A ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V Continuous Drain Current TC = 25 °C ID A TC = 100 °C 33 Pulsed Drain Current1 IDM 200 Avalanche Current IAS 20 Avalanche Energy L = 1mH EAS 200 mJ Power Dissipation TC = 25 °C PD 45 W TC = 100 °C 22 Junction & Storage Temperature Range TJ, Tstg -55 to 175 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case RJC 3.3 °C / W Junction-to-Ambient RJA 62.5 1Pulse width limited by maximum junction temperature. ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 100 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 2 3 4 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 nA 1. GATE 2. DRAIN 3. SOURCE G D S 2 31

REV 1.0 L-10-5 N-Channel Enhancement Mode Field Effect Transistor PG8E10AF TO-220F Halogen-Free & Lead-Free NIKO-SEM Zero Gate Voltage Drain Current IDSS VDS = 100V, VGS = 0V 1 VDS = 100V, VGS=0V, TJ=125 °C 100 Drain-Source On-State Resistance1 RDS(ON) VGS = 10V, ID = 14A 6.6 8.5 mΩ Forward Transconductance1 gfs VDS = 5V, ID = 14A 44 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = 50V, f = 1MHz 3509 pF Output Capacitance Coss 293 Reverse Transfer Capacitance Crss 19 Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 1.6 Ω Total Gate Charge2 Qg VDS = 50V, ID = 14A, VGS = 10V nC Gate-Source Charge2 Qgs 17 Gate-Drain Charge2 Qgd 15 Turn-On Delay Time2 td(on) VDD = 50V ID  14A, VGS = 10V, RGS = 6Ω nS Rise Time2 tr 48 Turn-Off Delay Time2 td(off) 48 Fall Time2 tf 38 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current IS 37 A Forward Voltage1 VSD IF = 14A, VGS = 0V 1.2 V Reverse Recovery Time trr IF = 14A, dlF/dt = 100A / S 43 nS Reverse Recovery Charge Qrr 71 nC 1Pulse test : Pulse Width  300 sec, Duty Cycle  2％. 2Independent of operating temperature.

REV 1.0 L-10-5 N-Channel Enhancement Mode Field Effect Transistor PG8E10AF TO-220F Halogen-Free & Lead-Free NIKO-SEM 0 1 2 3 4 5 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=5.2V VGS=4.6V VGS=4.8V 0.006 0.012 0.018 0.024 0.03 2 4 6 8 10 ID=14A 0.002 0.004 0.006 0.008 0.01 0 6 12 18 24 30 VGS=10V 25℃ 125℃ -20℃ 0 1 2 3 4 5 6 7 Output Characteristics Transfer Characteristics ID, Drain-To-Source Current(A) ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) On-Resistance VS Gate-To-Source Voltage On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) RDS(ON)ON-Resistance(OHM) VGS, Gate-To-Source Voltage(V) ID , Drain-To-Source Current(A) On-Resistance VS Temperature Capacitance Characteristic Normalized Drain to Source ON-Resistance C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) TJ , Junction Temperature(˚C) CISS COSS CRSS 100 1000 10000 0 20 40 60 80 100 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -50 -25 0 25 50 75 100 125 150 175 VGS=10V ID=14A

REV 1.0 L-10-5 N-Channel Enhancement Mode Field Effect Transistor PG8E10AF TO-220F Halogen-Free & Lead-Free NIKO-SEM Gate charge Characteristics Characteristics VGS , Gate-To-Source Voltage(V) Source-Drain Diode Forward Voltage IS , Source Current(A) Qg , Total Gate Charge(nC) VSD, Source-To-Drain Voltage(V) Safe Operating Area Single Pulse Maximum Power Dissipation Single Pulse Time(s) Power(W) ID , Drain Current(A) T1 , Square Wave Pulse Duration(S) r(t) , Normalized Effective Transient Thermal Resistance Transient Thermal Response Curve VDS, Drain-To-Source Voltage(V) 0 12 24 36 48 60 VDS=50V ID=14A 150℃ 25℃ 0.1 100 1000 DC 100ms 10ms 1ms 0.1 100 1000 0.1 1 10 100 1000 NOTE : 1.VGS = 10V 2.TC =25˚C 3.RθJC = 3.3 ˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) 120 240 360 480 600 0.001 0.01 0.1 1 10 100 Single Pulse RθJC = 3.3 ˚C/W TC = 25˚C single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJC = 3.3 ℃/W 3.TJ-TC = P*RthJC(t) 4.RthJC(t) = r(t)*RthJC