PG3510HEA NIKOSEM | Alldatasheet
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REV1.0 M-7-4 N-Channel Enhancement Mode Field Effect Transistor PG3510HEA PDFN 3x3P Halogen-Free & Lead-Free NIKO-SEM PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 100V 35mΩ 15A 100% UIS Tested 100% Rg Tested D1 D1 D2 D2 S1 G1 S2 G2#1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V Continuous Drain Current TC = 25 °C ID A TC = 100 °C 9.7 Pulsed Drain Current1 IDM 39 Continuous Drain Current TA = 25 °C ID 4.8 TA = 70 °C 3.9 Avalanche Current IAS 4 Avalanche Energy L = 1mH EAS 8 mJ Power Dissipation TC = 25 °C PD 17.8 W TC = 100 °C 7.1 Power Dissipation3 TA = 25 °C PD 1.7 W TA = 70 °C 1.1 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C G. GATE D. DRAIN S. SOURCE
REV1.0 M-7-4 N-Channel Enhancement Mode Field Effect Transistor PG3510HEA PDFN 3x3P Halogen-Free & Lead-Free NIKO-SEM THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient2 t ≦10s RJA 70 °C / W Junction-to-Ambient2 Steady-State RJA 91 Junction-to-Case Steady-State RJC 7 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. 3The Power dissipation is based on RJA t ≦10s value. ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 100 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 1.4 2 3 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = 100V, VGS = 0V 1 VDS = 100V, VGS = 0V, TJ = 55 °C 10 Drain-Source On-State Resistance1 RDS(ON) VGS = 4.5V, ID = 10A 43 55 mΩ VGS = 10V, ID = 14A 27 35 Forward Transconductance1 gfs VDS = 5V, ID = 14A 18 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = 50V, f = 1MHz 788 pF Output Capacitance Coss 77 Reverse Transfer Capacitance Crss 10 Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 1.3 Ω Total Gate Charge2 Qg VGS = 10V VDS = 50V , VGS = 10V, ID = 14A 14.4 nC VGS = 4.5V 5.7 Gate-Source Charge2 Qgs 3.8 Gate-Drain Charge2 Qgd 3.3 Turn-On Delay Time2 td(on) VDS = 50V , ID 14A, VGS = 10V, RGEN =6Ω nS Rise Time2 tr 42 Turn-Off Delay Time2 td(off) 20 Fall Time2 tf 59
REV1.0 M-7-4 N-Channel Enhancement Mode Field Effect Transistor PG3510HEA PDFN 3x3P Halogen-Free & Lead-Free NIKO-SEM SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current IS 15 A Forward Voltage1 VSD IF = 14A, VGS = 0V 1.2 V Reverse Recovery Time trr IF = 14A, dlF/dt = 100A / S 21 nS Reverse Recovery Charge Qrr 11 nC 1Pulse test : Pulse Width 300 sec, Duty Cycle 2％. 2Independent of operating temperature.
REV1.0 M-7-4 N-Channel Enhancement Mode Field Effect Transistor PG3510HEA PDFN 3x3P Halogen-Free & Lead-Free NIKO-SEM Output Characteristics Transfer Characteristics ID, Drain-To-Source Current(A) ID, Drain-To-Source Current(A) VDS, Drain-To-Source Voltage(V) VGS, Gate-To-Source Voltage(V) On-Resistance VS Gate-To-Source Voltage On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) RDS(ON)ON-Resistance(OHM) VGS, Gate-To-Source Voltage(V) ID , Drain-To-Source Current(A) On-Resistance VS Temperature Capacitance Characteristic Normalized Drain to Source ON-Resistance C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) TJ , Junction Temperature(˚C) 25℃ 125℃ -20℃ 0 1 2 3 4 5 6 CISS COSS CRSS 100 1000 0 20 40 60 80 100 0 1 2 3 4 5 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V VGS=4V VGS=3.9V 0.02 0.04 0.06 0.08 0.1 0 6 12 18 24 30 VGS=10V VGS=4.5V 0.02 0.04 0.06 0.08 0.1 2 4 6 8 10 ID=14A 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=14A
REV1.0 M-7-4 N-Channel Enhancement Mode Field Effect Transistor PG3510HEA PDFN 3x3P Halogen-Free & Lead-Free NIKO-SEM VGS , Gate-To-Source Voltage(V) Source-Drain Diode Forward Voltage Gate charge Characteristics Characteristics IS , Source Current(A) Qg , Total Gate Charge(nC) VSD, Source-To-Drain Voltage(V) Single Pulse Maximum Power Dissipation Safe Operating Area ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration(s) 0 3 6 9 12 15 VDS=50V ID=14A 150℃ 25℃ 0.1 100 single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 91 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 91 ˚C/W TA = 25˚C DC 100ms 10ms 1ms 0.01 0.1 100 0.1 1 10 100 1000 NOTE : 1.VGS = 10V 2.TA =25˚C 3.RθJA = 91 ˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON)
REV1.0 M-7-4 N-Channel Enhancement Mode Field Effect Transistor PG3510HEA PDFN 3x3P Halogen-Free & Lead-Free NIKO-SEM Safe Operating Area Single Pulse Maximum Power Dissipation ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration(s) 0.001 0.01 0.1 1 10 100 Single Pulse RθJC = 7 ˚C/W TC = 25˚C DC 100ms 10ms 1ms 0.1 100 0.1 1 10 100 1000 NOTE : 1.VGS = 10V 2.TC =25˚C 3.RθJC = 7 ˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJC = 7 ℃/W 3.TJ-TC = P*RthJC(t) 4.RthJC(t) = r(t)*RthJC