PG2910BD NIKOSEM | Alldatasheet

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REV 1.0 L-20-1 N-Channel Enhancement Mode Field Effect Transistor PG2910BD TO-252 Halogen-Free & Lead-Free NIKO-SEM 1 2 3 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V Continuous Drain Current TC = 25 ° C ID A TC = 100 ° C 17 Pulsed Drain Current1 IDM 74 Avalanche Current IAS 4 Avalanche Energy L = 1mH EAS 8 mJ Power Dissipation TC = 25 ° C PD W TC = 100 ° C 20 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 ° C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case RJC 2.5 ° C / W Junction-to-Ambient RJA 62.5 1Pulse width limited by maximum junction temperature. ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITS MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 100 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 1.4 2 3 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = 100V, VGS = 0V 1 VDS = 100V, VGS = 0V, TJ = 125 ° C 100 1. GATE 2. DRAIN 3. SOURCE PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 100V 29.8mΩ 27A G D S

REV 1.0 L-20-1 N-Channel Enhancement Mode Field Effect Transistor PG2910BD TO-252 Halogen-Free & Lead-Free NIKO-SEM Drain-Source On-State Resistance1 RDS(ON) VGS = 4.5V, ID = 10A 40.3 49.8 mΩ VGS = 10V, ID = 14A 24.3 29.8 Forward Transconductance1 gfs VDS = 5V, ID = 14A 19 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = 50V, f = 1MHz 780 pF Output Capacitance Coss 77 Reverse Transfer Capacitance Crss 9.6 Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 1.1 Ω Total Gate Charge2 Qg VGS = 10V VDS =50V,ID = 14A 14.6 nC VGS = 4.5V 9 Gate-Source Charge2 Qgs 3.5 Gate-Drain Charge2 Qgd 4.9 Turn-On Delay Time2 td(on) VDD = 50V, ID  14A, VGS = 10V, RGEN =6Ω nS Rise Time2 tr 40 Turn-Off Delay Time2 td(off) 21 Fall Time2 tf 57 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current IS 27 A Forward Voltage1 VSD IF = 14A , VGS = 0V 1.2 V Reverse Recovery Time trr IF = 14A , dIF/dt= 100A/μs 25 nS Reverse Recovery Charge Qrr 14 nC 1Pulse test : Pulse Width  300 sec, Duty Cycle  2％. 2Independent of operating temperature.

REV 1.0 L-20-1 N-Channel Enhancement Mode Field Effect Transistor PG2910BD TO-252 Halogen-Free & Lead-Free NIKO-SEM Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Capacitance Characteristic C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) On-Resistance VS Temperature On-Resistance VS Gate-To-Source Voltage RDS(ON)ON-Resistance(OHM) VGS, Gate-To-Source Voltage(V) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) ID , Drain-To-Source Current(A) 25℃ 125℃ -20℃ 0 1 2 3 4 5 6 7 0 1 2 3 4 5 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4V VGS=4.5V VGS=2.9V VGS=3.5V 0.02 0.04 0.06 0.08 0.1 0 6 12 18 24 30 VGS=10V VGS=4.5V 0.02 0.04 0.06 0.08 0.1 2 4 6 8 10 ID=14A 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=14A CISS COSS CRSS 100 1000 10000 0 20 40 60 80 100

REV 1.0 L-20-1 N-Channel Enhancement Mode Field Effect Transistor PG2910BD TO-252 Halogen-Free & Lead-Free NIKO-SEM Gate charge Characteristics Characteristics Qg , Total Gate Charge(nC) VGS , Gate-To-Source Voltage(V) Source-Drain Diode Forward Voltage VSD, Source-To-Drain Voltage(V) IS , Source Current(A) Safe Operating Area Single Pulse Maximum Power Dissipation ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration(S) 0 4 8 12 16 20 VDS=50V ID=14A 150℃ 25℃ 0.1 100 120 180 240 300 0.001 0.01 0.1 1 10 100 Single Pulse RθJC = 2.5 ˚C/W TC = 25˚C DC 100ms 10ms 1ms 0.1 100 0.1 1 10 100 1000 NOTE : 1.VGS = 10V 2.TC =25˚C 3.RθJC = 2.5 ˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJC = 2.5 ℃/W 3.TJ-TC = P*RthJC(t) 4.RthJC(t) = r(t)*RthJC