PG1H10ATL NIKOSEM | Alldatasheet
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REV 1.0 L-13-3 N-Channel Enhancement Mode Field Effect Transistor PG1H10ATL TO-LL Halogen-Free & Lead-Free NIKO-SEM G(Pin1): GATE D: DRAIN S(Pin2-Pin8): SOURCE PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 100V 1.98mΩ 274A G D S ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V Continuous Drain Current TC = 25 ° C ID 274 A TC = 100 ° C 173 Pulsed Drain Current1 IDM 1040 Avalanche Current IAS 31 Avalanche Energy L = 1mH EAS 480 mJ Power Dissipation TC = 25 ° C PD 312 W TC = 100 ° C 125 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 ° C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case RJC 0.4 ° C / W Junction-to-Ambient RJA 50 1Pulse width limited by maximum junction temperature.
REV 1.0 L-13-3 N-Channel Enhancement Mode Field Effect Transistor PG1H10ATL TO-LL Halogen-Free & Lead-Free NIKO-SEM ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITS MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 100 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 2 2.6 4 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = 100V, VGS = 0V 1 VDS = 100V, VGS = 0V, TJ = 55 ° C 100 Drain-Source On-State Resistance1 RDS(ON) VGS = 10V, ID = 14A 1.64 1.98 mΩ Forward Transconductance1 gfs VDS = 5V, ID = 14A 71 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = 50V, f = 1MHz 11204 pF Output Capacitance Coss 1017 Reverse Transfer Capacitance Crss 62 Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 0.8 Ω Total Gate Charge2 Qg VGS = 10V, VDS = 50V,ID = 14A 195 nC Gate-Source Charge2 Qgs 50 Gate-Drain Charge2 Qgd 44 Turn-On Delay Time2 td(on) VDD = 50V, ID 14A, VGS = 10V, RGEN =6Ω nS Rise Time2 tr 58 Turn-Off Delay Time2 td(off) 163 Fall Time2 tf 71 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current IS 260 A Forward Voltage1 VSD IF = 14A , VGS = 0V 1.2 V Reverse Recovery Time trr IF = 14A , dIF/dt= 100A/μs 74 nS Reverse Recovery Charge Qrr 186 nC 1Pulse test : Pulse Width 300 sec, Duty Cycle 2％. 2Independent of operating temperature.
REV 1.0 L-13-3 N-Channel Enhancement Mode Field Effect Transistor PG1H10ATL TO-LL Halogen-Free & Lead-Free NIKO-SEM Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Capacitance Characteristic C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) On-Resistance VS Temperature On-Resistance VS Gate-To-Source Voltage RDS(ON)ON-Resistance(OHM) VGS, Gate-To-Source Voltage(V) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) ID , Drain-To-Source Current(A) 25℃ 125℃ -20℃ 0 1 2 3 4 5 6 0 0.6 1.2 1.8 2.4 3 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.1V VGS=4.3V VGS=3.9V 0.0006 0.0012 0.0018 0.0024 0.003 0 10 20 30 40 50 VGS=10V 0.002 0.004 0.006 0.008 0.01 2 4 6 8 10 ID=14A CISS COSS CRSS 100 1000 10000 100000 0 20 40 60 80 100 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=14A
REV 1.0 L-13-3 N-Channel Enhancement Mode Field Effect Transistor PG1H10ATL TO-LL Halogen-Free & Lead-Free NIKO-SEM Gate charge Characteristics Characteristics Qg , Total Gate Charge(nC) VGS , Gate-To-Source Voltage(V) Source-Drain Diode Forward Voltage VSD, Source-To-Drain Voltage(V) IS , Source Current(A) Safe Operating Area Single Pulse Maximum Power Dissipation ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration(S) 0 40 80 120 160 200 VDS=50V ID=14A 150℃ 25℃ 0.1 100 1000 2000 4000 6000 8000 10000 0.001 0.01 0.1 1 10 100 Single Pulse RθJC = 0.4 ˚C/W TC = 25˚C DC 100ms 10ms 1ms 0.1 100 1000 10000 0.1 1 10 100 1000 NOTE : 1.VGS = 10V 2.TC =25˚C 3.RθJC = 0.4 ˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJC = 0.4 ℃/W 3.TJ-TC = P*RthJC(t) 4.RthJC(t) = r(t)*RthJC