PF5G3EA NIKOSEM | Alldatasheet
Document overview
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- PDF pages: 4
Technical content
Features
- Pb−Free, Halogen Free and RoHS compliant.
- Low RDS(on) to Minimize Conduction Losses.
- Ohmic Region Good RDS(on) Ratio.
- Optimized Gate Charge to Minimize Switching Losses.
- Products Integrated ESD diode with ESD Protected.
Applications
- Protection Circuits Applications.
- Logic/Load Switch Circuits Applications. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current2,3 TC = 25 °C ID -56 A TC = 100°C -35 Pulsed Drain Current1 IDM -168 Avalanche Current IAS -71 Avalanche Energy L = 0.1mH EAS 252 mJ Power Dissipation TC = 25 °C PD 43 W TC = 100°C 17 Junction & Storage Temperature Range TJ, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case RJC 2.9 °C / W Junction-to-Ambient RJA 62.5 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed. 3Package limitation current is -55A. PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -30V 8mΩ -56A 1. GATE 2. DRAIN 3. SOURCE
Mode Field Effect Transistor PF5G3EA TO-220F Halogen-Free & Lead-Free NIKO-SEM REV1.0 K-10-1 ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250A -30 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250A -1.3 -1.65 -2.3 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±10 uA Zero Gate Voltage Drain Current IDSS VDS = -30V, VGS = 0V -1 VDS = -30V, VGS = 0V, TJ = 125 °C -10 Drain-Source On-State Resistance1 RDS(ON) mΩ VGS = -10V, ID = -20A 5.6 8 Forward Transconductance1 gfs VDS = -5V, ID = -20A 48 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = -15V, f = 1MHz 5251 pF Output Capacitance Coss 812 Reverse Transfer Capacitance Crss 724 Gate resistance Rg VGS=0V,VDS=0V, f=1MHz 2 Ω Total Gate Charge2 Qg VDS = -15V , VGS= -10V , ID =-20A 120 nC Gate-Source Charge2 Qgs 16 Gate-Drain Charge2 Qgd 28 Turn-On Delay Time2 td(on) VDS = -15V, ID -20A, VGS = -10V, RGS = 6Ω nS Rise Time2 tr 77 Turn-Off Delay Time2 td(off) 160 Fall Time2 tf 119 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current IS -33 A Forward Voltage1 VSD IF = -20A, VGS = 0V -1.3 V Reverse Recovery Time trr IF = -20A, dlF/dt = 100A / S 25 nS Reverse Recovery Charge Qrr 19 nC 1Pulse test : Pulse Width 300 sec, Duty Cycle 2％. 2Independent of operating temperature. 3Package limitation current is -55A.
Mode Field Effect Transistor PF5G3EA TO-220F Halogen-Free & Lead-Free NIKO-SEM REV1.0 K-10-1 Output Characteristics -ID, Drain-To-Source Current(A) Transfer Characteristics -ID, Drain-To-Source Current(A) -VGS, Gate-To-Source Voltage(V) -VDS, Drain-To-Source Voltage(V) Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Capacitance Characteristic C , Capacitance(pF) -VDS, Drain-To-Source Voltage(V) On-Resistance VS Temperature On-Resistance VS Gate-To-Source Voltage RDS(ON)ON-Resistance(OHM) -VGS, Gate-To-Source Voltage(V) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) -ID , Drain-To-Source Current(A) 25℃ 125℃ -20℃ 0 1 2 3 4 5 CISS COSS CRSS 1000 2000 3000 4000 5000 6000 7000 0 5 10 15 20 25 30 0 1 2 3 4 5 VGS=-10V VGS=-9V VGS=-8V VGS=-7V VGS=-6V VGS=-5V VGS=-4.5V VGS=-2.9V VGS=-3 VGS=-2.7V VGS=-2.5V 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 VGS=-10V ID=-20A 0.004 0.008 0.012 0.016 0.02 2 4 6 8 10 ID=-20A 0.003 0.006 0.009 0.012 0.015 0 6 12 18 24 30 VGS=-10V VGS=-4.5V
Mode Field Effect Transistor PF5G3EA TO-220F Halogen-Free & Lead-Free NIKO-SEM REV1.0 K-10-1 Gate charge Characteristics Characteristics Qg , Total Gate Charge(nC) -VGS , Gate-To-Source Voltage(V) Source-Drain Diode Forward Voltage -VSD, Source-To-Drain Voltage(V) -IS , Source Current(A) Safe Operating Area Single Pulse Maximum Power Dissipation -ID , Drain Current(A) Power(W) Single Pulse Time(s) -VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration[sec] 0 30 60 90 120 VDS=-15V ID=-20A 150℃ 25℃ 0.1 100 120 240 360 480 600 0.001 0.01 0.1 1 10 100 Single Pulse RθJC = 2.9 ˚C/W TC = 25˚C single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJC = 2.9 ℃/W 3.TC-TC = P*RthJC(t) 4.RthJC(t) = r(t)*RthJC DC 100ms 10ms 1ms 100 1000 0.1 1 10 100 NOTE : 1.VGS = 10V 2.TC =25˚C 3.RθJC = 2.9 ˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON)