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Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
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Technical content

Features

  • Pb−Free, Halogen Free and RoHS compliant.
  • Low R DS(on) to Minimize Conduction Losses.
  • Ohmic Region Good RDS(on) Ratio.
  • Optimized Gate Charge to Minimize Switching Losses.

Applications

  • Protection Circuits Applications.
  • Logic/Load Switch Circuits Applications. ABSOLUTE MAXIMUM RATINGS (T A = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage V DS -40 V Gate-Source Voltage V GS ±25 V Continuous Drain Current2,3 TC = 25 °C ID -52 A TC = 100°C -33 Pulsed Drain Current1 I DM -120 Avalanche Current I AS -47 Avalanche Energy L = 0.1mH E AS 110 mJ Power Dissipation TC = 25 °C PD 41 W TC = 100°C 16 Junction & Storage Temperature Range T J, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case RJC 3 °C / W Junction-to-Ambient RJA 62.5 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed. 3Package limitation current is -55A. PRODUCT SUMMARY V(BR)DSS R DS(ON) I D -40V 8mΩ -52A 1. GATE 2. DRAIN 3. SOURCE

Mode Field Effect Transistor PF5B3BA TO-220F Halogen-Free & Lead-Free NIKO-SEM REV1.0 H-19-3 ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITMIN TYP MAX STATIC Drain-Source Breakdown Voltage V (BR)DSS VGS = 0V, ID = -250A -40 V Gate Threshold Voltage V GS(th) VDS = VGS, ID = -250A -1 -1.6 -3 Gate-Body Leakage I GSS V DS = 0V, VGS = ±25V ±100 nA Zero Gate Voltage Drain Current I DSS VDS = -32V, VGS = 0V -1 VDS = -30V, VGS = 0V, TJ = 125 °C -10 Drain-Source On-State Resistance1 RDS(ON) VGS = -4.5V, ID = -15A 9.1 14 mΩ VGS = -10V, ID = -20A 6.9 8 Forward Transconductance1 g fs V DS = -5V, ID = -20A 62 S DYNAMIC Input Capacitance C iss VGS = 0V, VDS = -20V, f = 1MHz 3880 pFOutput Capacitance C oss 505 Reverse Transfer Capacitance C rss 401 Gate resistance Rg V GS=0V,VDS=0V, f=1MHz 3.3 Ω Total Gate Charge2 Q g VDS = -20V , VGS= -10V , ID =-20A nCGate-Source Charge2 Q gs 9.5 Gate-Drain Charge2 Q gd 19.8 Turn-On Delay Time2 t d(on) VDS = -20V, ID  -20A, VGS = -10V, RGS = 6Ω nS Rise Time2 t r 81 Turn-Off Delay Time2 t d(off) 165 Fall Time2 t f 151 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current I S -31 A Forward Voltage1 V SD I F = -20A, VGS = 0V -1.3 V Reverse Recovery Time t rr IF = -20A, dlF/dt = 100A / S 31 nS Reverse Recovery Charge Q rr 16 nC 1Pulse test : Pulse Width  300 sec, Duty Cycle  2％. 2Independent of operating temperature. 3Package limitation current is -55A.

Mode Field Effect Transistor PF5B3BA TO-220F Halogen-Free & Lead-Free NIKO-SEM REV1.0 H-19-3 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 VGS=-10V ID=-20A CISS COSS CRSS 1000 2000 3000 4000 5000 0 5 10 15 20 25 30 0.01 0.02 0.03 0.04 0.05 2468 1 0 ID=-20A 0.003 0.006 0.009 0.012 0.015 0 6 12 18 24 30 VGS=-10V VGS=-4.5V 25℃ 125℃ -20℃ 012345 0123456 VGS=-10V VGS=-9V VGS=-8V VGS=-7V VGS=-6V VGS=-5V VGS=-4.5V VGS=-2.9V VGS=-2.5V VGS=-2.7V Output Characteristics -ID, Drain-To-Source Current(A) Transfer Characteristics -ID, Drain-To-Source Current(A) -VGS, Gate-To-Source Voltage(V) -VDS, Drain-To-Source Voltage(V) Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Capacitance Characteristic C , Capacitance(pF) -VDS, Drain-To-Source Voltage(V) On-Resistance VS Temperature On-Resistance VS Gate-To-Source RDS(ON)ON-Resistance(OHM) -VGS, Gate-To-Source Voltage(V) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) -ID , Drain-To-Source Current(A) v

Mode Field Effect Transistor PF5B3BA TO-220F Halogen-Free & Lead-Free NIKO-SEM REV1.0 H-19-3 single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJC = 3 ℃/W 3.TJ-TC = P*RthJC(t) 4.RthJC(t) = r(t)*RthJC 200 400 600 800 0.001 0.01 0.1 1 10 100 Single Pulse RθJC = 3 ˚C/W TC=25˚C 25℃125℃ 100 0 1 73 45 16 88 5 VDS=-20V ID=-20A Gate charge Characteristics Qg , Total Gate Charge(nC) -VGS , Gate-To-Source Voltage(V) Source-Drain Diode Forward Voltage -VSD, Source-To-Drain Voltage(V) -IS , Source Current(A) Safe Operating Area Single Pu lse Maximum Power Dissipation -ID , Drain Current(A) Power(W) Single Pulse Time(s) -VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration[sec] DC 100ms 10ms 1ms 0.1 100 1000 0.1 1 10 100 NOTE : 1.VGS= 10V 2.TC=25˚C 3.RθJC = 3˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON)