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REV1.0 H-20-4 NIKO-SEM N-Channel Enhancement Mode Field Effect Transistor PF515BL SOT-223 Halogen-Free & Lead-Free G D S ABSOLUTE MAXIMUM RATINGS (T A = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Gate-Source Voltage V GS ±20 V Continuous Drain Current TA = 25 °C ID A TA = 100 °C 0.8 Pulsed Drain Current1 I DM 4 Avalanche Current I AS 1.1 Avalanche Energy L = 1mH E AS 0.6 mJ Power Dissipation3 TA = 25 °C PD 1.9 W TA = 100 °C 1.2 Operating Junction & Storage Temperature Range T j, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient2 t ≦10s RJA 40 °C / W Junction-to-Ambient2 Steady-State RJA 65 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. 3The Power dissipation is based on RJA t ≦10s value. ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITMIN TYP MAX STATIC Drain-Source Breakdown Voltage V (BR)DSS VGS = 0V, ID = 250A 150 V Gate Threshold Voltage V GS(th) VDS = VGS, ID = 250A 1.3 1.87 2.3 Gate-Body Leakage I GSS V DS = 0V, VGS = ±20V ±100 nA Zero Gate Voltage Drain Current I DSS VDS = 120V, VGS = 0V 1 VDS = 100V, VGS = 0V, TJ = 125 °C 10 1. GATE 2. DRAIN 3. SOURCE PRODUCT SUMMARY V(BR)DSS R DS(ON) I D 150V 650mΩ 1A
REV1.0 H-20-4 NIKO-SEM N-Channel Enhancement Mode Field Effect Transistor PF515BL SOT-223 Halogen-Free & Lead-Free Drain-Source On-State Resistance1 RDS(ON) VGS = 4.5V, ID = 1A 494 800 mΩ VGS = 10V, ID = 1A 484 650 Forward Transconductance1 g fs V DS = 5V, ID = 1A 8.6 S DYNAMIC Input Capacitance C iss VGS = 0V, VDS = 25V, f = 1MHz 309 pFOutput Capacitance C oss 31 Reverse Transfer Capacitance C rss 17 Gate Resistance R g V GS = 0V, VDS = 0V, f = 1MHz 2.5 Ω Total Gate Charge2 Q g(VGS=10V) VDS = 75V, ID = 1A nCQg(VGS=4.5V) 4.8 Gate-Source Charge2 Q gs 0.8 Gate-Drain Charge2 Q gd 2.7 Turn-On Delay Time2 t d(on) VDS = 75V ID 1A, VGS = 10V, RGS = 25Ω nS Rise Time2 t r 3 Turn-Off Delay Time2 t d(off) 17 Fall Time2 t f 5 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current I S 1 A Forward Voltage1 V SD I F = 1A, VGS = 0V 1 V Reverse Recovery Time t rr IF = 1A, dI/dt = 100 A/μs 41 nS Reverse Recovery Charge Q rr 21 nC 1Pulse test : Pulse Width 300 sec, Duty Cycle 2％. 2Independent of operating temperature.
REV1.0 H-20-4 NIKO-SEM N-Channel Enhancement Mode Field Effect Transistor PF515BL SOT-223 Halogen-Free & Lead-Free 25℃ 125℃ -20℃ 012345 0.3 0.6 0.9 1.2 1.5 2468 1 0 ID=1A Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Capacitance Characteristic C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) On-Resistance VS Temperature On-Resistance VS Gate-To-Source Voltage RDS(ON)ON-Resistance(OHM) VGS, Gate-To-Source Voltage(V) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) ID , Drain-To-Source Current(A) CISS COSS CRSS 100 150 200 250 300 350 400 0 5 10 15 20 25 30 0123456 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V VGS=3V VGS=2.8V VGS=3.2V 0.2 0.4 0.6 0.8 0123456 VGS=10V VGS=4.5V 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=1A
REV1.0 H-20-4 NIKO-SEM N-Channel Enhancement Mode Field Effect Transistor PF515BL SOT-223 Halogen-Free & Lead-Free DC 100ms 10ms 1ms 0.01 0.1 1 10 100 1000 NOTE : 1.VGS= 10V 2.TA=25˚C 3.RθJA = 65˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 65 ˚C/W TA=25˚C 02468 VDS=75V ID=1A Gate charge Characteristics Qg , Total Gate Charge(nC) VGS , Gate-To-Source Voltage(V) Source-Drain Diode Forward Voltage VSD, Source-To-Drain Voltage(V) IS , Source Current(A) Safe Operating Area Single Pulse Maximum Power Dissipation ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration(S) 25℃150℃ 0.1 100 single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 65 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA