PF1215AF NIKOSEM | Alldatasheet

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N-Channel Enhancement Mode Field Effect Transistor PF1215AF TO-220F Halogen-Free & Lead-Free NIKO-SEM REV 1.0 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 150 V Gate-Source Voltage VGS ±20 V Continuous Drain Current TC = 25 ° C ID A TC = 100 ° C 25 Pulsed Drain Current1 IDM 150 Avalanche Current IAS 22 Avalanche Energy L = 1mH EAS 242 mJ Power Dissipation TC = 25 ° C PD 46 W TC = 100 ° C 18 Junction & Storage Temperature Range TJ, Tstg -55 to 150 ° C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient RJA 62.5 ° C / W Junction-to-Case RJC 2.7 1Pulse width limited by maximum junction temperature. .ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 150 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 2 3 4 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = 150V, VGS = 0V 1 A VDS = 120V, VGS = 0V, TJ = 55 ° C 10 Drain-Source On-State Resistance1 RDS(ON) VGS = 10V, ID = 20A 10 12.5 mΩ PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 150V 12.5mΩ 41A 1: GATE 2: DRAIN 3: SOURCE G D S 2 31

N-Channel Enhancement Mode Field Effect Transistor PF1215AF TO-220F Halogen-Free & Lead-Free NIKO-SEM REV 1.0 Forward Transconductance1 gfs VDS = 5V, ID = 20A 68 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = 75V, f = 1MHz 3282 pF Output Capacitance Coss 262 Reverse Transfer Capacitance Crss 9.4 Total Gate Charge2 Qg VGS = 10V , VDS = 75V ID = 20A 41.8 nC Gate-Source Charge2 Qgs 15 Gate-Drain Charge2 Qgd 5.9 Turn-On Delay Time2 td(on) VDS = 75V , ID  20A, VGS = 10V, RGEN =6Ω nS Rise Time2 tr 46 Turn-Off Delay Time2 td(off) 47 Fall Time2 tf 48 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) Continuous Current IS 38 A Forward Voltage1 VSD IF = 20A, VGS = 0V 1.2 V Diode Reverse Recovery Time trr IF= 20A, dI/dt=100A/μs 69 nS Diode Reverse Recovery Charge Qrr 125 nC 1Pulse test : Pulse Width  300 sec, Duty Cycle  2%. 2Independent of operating temperature.

N-Channel Enhancement Mode Field Effect Transistor PF1215AF TO-220F Halogen-Free & Lead-Free NIKO-SEM REV 1.0 Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Capacitance Characteristic C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) On-Resistance VS Temperature On-Resistance VS Gate-To-Source Voltage RDS(ON)ON-Resistance(OHM) VGS, Gate-To-Source Voltage(V) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) ID , Drain-To-Source Current(A) 25℃ 125℃ -20℃ 0 1 2 3 4 5 6 7 0 1 2 3 4 5 6 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.4V VGS=4.3V VGS=4.5V VGS=4.2V VGS=4.1V 0.01 0.02 0.03 0.04 0.05 2 4 6 8 10 ID=20A 0.008 0.016 0.024 0.032 0.04 0 6 12 18 24 30 VGS=10V CISS COSS CRSS 100 1000 10000 0 30 60 90 120 150 0.0 0.4 0.8 1.2 1.6 2.0 2.4 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=20A

N-Channel Enhancement Mode Field Effect Transistor PF1215AF TO-220F Halogen-Free & Lead-Free NIKO-SEM REV 1.0 Gate charge Characteristics Characteristics Qg , Total Gate Charge(nC) VGS , Gate-To-Source Voltage(V) Source-Drain Diode Forward Voltage VSD, Source-To-Drain Voltage(V) IS , Source Current(A) Safe Operating Area Single Pulse Maximum Power Dissipation ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration(S) 0 10 20 30 40 50 VDS=75V ID=20A 150℃ 25℃ 0.1 100 1000 DC 100ms 10ms 1ms 0.1 100 1000 0.1 1 10 100 1000 NOTE : 1.VGS = 10V 2.TC =25˚C 3.RθJC = 2.7 ˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) 200 400 600 800 0.001 0.01 0.1 1 10 100 Single Pulse RθJC = 2.7 ˚C/W TC = 25˚C single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJC = 2.7 ℃/W 3.TJ-TC = P*RthJC(t) 4.RthJC(t) = r(t)*RthJC