PE8B0BA NIKOSEM | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 6
Technical content
Features
- Pb−Free, Halogen Free and RoHS compliant.
- Low RDS(on) to Minimize Conduction Losses.
- Ohmic Region Good RDS(on) Ratio.
- Optimized Gate Charge to Minimize Switching Losses.
- 100% UIS and Rg Tested.
Applications
- Protection Circuits Applications.
- Computer for DC to DC Converters Applications. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current TC = 25 °C ID A TC = 100 °C 25 Pulsed Drain Current1 IDM 80 Continuous Drain Current4 TA = 25 °C ID TA = 70 °C 10 Avalanche Current IAS 19 Avalanche Energy L = 0.1mH EAS 18 mJ Power Dissipation TC = 25 °C PD W TC = 100 °C 9 Power Dissipation3 TA = 25 °C PD 2.5 W TA = 70 °C 1.6 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C G. GATE D. DRAIN S. SOURCE PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 30V 8mΩ 39A
REV1.0 L-40-2 N-Channel Enhancement Mode Field Effect Transistor PE8B0BA PDFN 3x3P Halogen-Free & Lead-Free NIKO-SEM THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient2 t ≦10s RJA 50 °C / W Junction-to-Ambient2 Steady-State RJA 89 Junction-to-Case Steady-State RJC 5.5 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. 3The Power dissipation is based on RJA t ≦10s value. ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 30 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 1.3 1.65 2.3 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = 30V, VGS = 0V 1 VDS = 30V, VGS = 0V, TJ = 55 °C 10 Drain-Source On-State Resistance4 RDS(ON) VGS = 4.5V, ID = 13A 8.7 12 mΩ VGS = 10V, ID = 13A 5.6 8 Forward Transconductance4 gfs VDS = 5V, ID = 13A 42 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = 15V, f = 1MHz 577 pF Output Capacitance Coss 304 Reverse Transfer Capacitance Crss 26 Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 1.6 Ω Total Gate Charge5 Qg VGS = 10V VDS = 15V , VGS = 10V, ID = 13A nC VGS = 4.5V 5.4 Gate-Source Charge5 Qgs 1.4 Gate-Drain Charge5 Qgd 2.4 Turn-On Delay Time5 td(on) VDS = 15V , ID 13A, VGS = 10V, RGEN =6Ω nS Rise Time5 tr 60 Turn-Off Delay Time5 td(off) 18 Fall Time5 tf 76
REV1.0 L-40-2 N-Channel Enhancement Mode Field Effect Transistor PE8B0BA PDFN 3x3P Halogen-Free & Lead-Free NIKO-SEM SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current IS 18 A Forward Voltage4 VSD IF = 13A, VGS = 0V 1.2 V Reverse Recovery Time trr IF = 13A, dlF/dt = 100A / S 15 nS Reverse Recovery Charge Qrr 4.7 nC 4Pulse test : Pulse Width 300 sec, Duty Cycle 2％. 5Independent of operating temperature.
REV1.0 L-40-2 N-Channel Enhancement Mode Field Effect Transistor PE8B0BA PDFN 3x3P Halogen-Free & Lead-Free NIKO-SEM Output Characteristics Transfer Characteristics ID, Drain-To-Source Current(A) ID, Drain-To-Source Current(A) VDS, Drain-To-Source Voltage(V) VGS, Gate-To-Source Voltage(V) On-Resistance VS Gate-To-Source Voltage On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) RDS(ON)ON-Resistance(OHM) VGS, Gate-To-Source Voltage(V) ID , Drain-To-Source Current(A) On-Resistance VS Temperature Capacitance Characteristic Normalized Drain to Source ON-Resistance C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) TJ , Junction Temperature(˚C) CISS COSS CRSS 200 400 600 800 1000 1200 0 5 10 15 20 25 30 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=13A 25℃ 125℃ -20℃ 0 1 2 3 4 5 0 1 2 3 4 5 6 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V VGS=3.2V VGS=2.9V VGS=3V VGS=2.6V 0.004 0.008 0.012 0.016 0.02 2 4 6 8 10 ID=13A 0.003 0.006 0.009 0.012 0.015 0 6 12 18 24 30 VGS=10V VGS=4.5V
REV1.0 L-40-2 N-Channel Enhancement Mode Field Effect Transistor PE8B0BA PDFN 3x3P Halogen-Free & Lead-Free NIKO-SEM VGS , Gate-To-Source Voltage(V) Source-Drain Diode Forward Voltage Gate charge Characteristics Characteristics IS , Source Current(A) Qg , Total Gate Charge(nC) VSD, Source-To-Drain Voltage(V) Single Pulse Maximum Power Dissipation Safe Operating Area ID , Drain Current(A) Power(W) VDS, Drain-To-Source Voltage(V) Single Pulse Time(s) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration(s) 0 3 6 9 12 15 VDS=15V ID=13A 150℃ 25℃ 0.1 100 single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 89 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA DC 100ms 10ms 1ms 0.01 0.1 100 0.1 1 10 100 NOTE : 1.VGS = 10V 2.TA =25˚C 3.RθJA = 89 ˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 89 ˚C/W TA = 25˚C
REV1.0 L-40-2 N-Channel Enhancement Mode Field Effect Transistor PE8B0BA PDFN 3x3P Halogen-Free & Lead-Free NIKO-SEM Single Pulse Maximum Power Dissipation Safe Operating Area ID , Drain Current(A) Power(W) VDS, Drain-To-Source Voltage(V) Single Pulse Time(s) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration(s) 120 150 0.001 0.01 0.1 1 10 100 Single Pulse RθJC = 5.5 ˚C/W TC = 25˚C DC 100ms 10ms 1ms 0.1 100 0.1 1 10 100 NOTE : 1.VGS = 10V 2.TC =25˚C 3.RθJC = 5.5 ˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJC = 5.5 ℃/W 3.TJ-TC = P*RthJC(t) 4.RthJC(t) = r(t)*RthJC