PE854DT NIKOSEM | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 9
Technical content
Features
- Pb−Free, Halogen Free and RoHS compliant.
- Low RDS(on) to Minimize Conduction Losses.
- Optimized Gate Charge to Minimize Switching Losses.
- 100% UIS and Rg Tested.
Applications
- Protection Circuits Applications.
- Computer for DC to DC Converters Applications. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Q2 Q1 UNITS Drain-Source Voltage VDS 30 30 V Gate-Source Voltage VGS ±20 ±20 V Continuous Drain Current TC = 25 °C ID 43 35 A TC = 100 °C 27 22 Pulsed Drain Current1 IDM 50 41 Continuous Drain Current3 TA = 25 °C ID 16 13 TA = 70 °C 12 10.5 Avalanche Current IAS 25 25 Avalanche Energy L = 0.03mH EAS 9.3 9.3 mJ Power Dissipation TC = 25 °C PD 21 17 W TC = 100 °C 8.5 6.9 Power Dissipation3 TA = 25 °C PD 2.8 2.4 W TA = 70 °C 1.8 1.5 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C PRODUCT SUMMARY V(BR)DSS RDS(ON) ID Q2 30V 6.5mΩ 43A Q1 30V 8mΩ 35A 1 : G1 2,3,4 : D1 5,6,7 : S2 8 : G2 9 : S1/D2
REV1.0 M-23-3 Dual N-Channel Enhancement Mode Field Effect Transistor PE854DT PDFN 3x3S Halogen-Free & Lead-Free NIKO-SEM THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient2 t ≦10s RJA Q2 50 °C / W Q1 53 Junction-to-Ambient2 Steady-State RJA Q2 67 Q1 70 Junction-to-Case RJC Q2 6.2 Q1 6.5 1Pulse width limited by maximum junction temperature TJ(MAX)=150°C. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. 3The Power dissipation is based on RJA t ≦10s value. ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A Q2 30 V VGS = 0V, ID = 250A Q1 30 Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A Q2 1.3 1.5 2.3 VDS = VGS, ID = 250A Q1 1.3 1.5 2.3 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V Q2 ±100 nA VDS = 0V, VGS = ±20V Q1 ±100 Zero Gate Voltage Drain Current IDSS VDS = 30V, VGS = 0V Q2 1 VDS = 30V, VGS = 0V Q1 1 VDS = 30V, VGS = 0V, TJ = 55 °C Q2 10 VDS = 30V, VGS = 0V, TJ = 55 °C Q1 10 Drain-Source On-State Resistance1 RDS(ON) VGS = 4.5V, ID = 13A Q2 7.6 10.5 mΩ VGS = 4.5V, ID = 13A Q1 8.4 12 VGS = 10V, ID = 13A Q2 4.9 6.5 VGS = 10V, ID = 13A Q1 5.6 8 Forward Transconductance1 gfs VDS = 5V, ID = 13A Q2 47 S VDS = 5V, ID = 13A Q1 46
REV1.0 M-23-3 Dual N-Channel Enhancement Mode Field Effect Transistor PE854DT PDFN 3x3S Halogen-Free & Lead-Free NIKO-SEM DYNAMIC Input Capacitance Ciss Q2 VGS = 0V, VDS = 15V f = 1MHz VGS = 0V, VDS = 15V f = 1MHz Q2 589 pF Q1 585 Output Capacitance Coss Q2 324 Q1 324 Reverse Transfer Capacitance Crss Q2 36 Q1 35 Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz Q2 2.5 Ω Q1 2.5 Total Gate Charge2 Qg VGS = 10V VDS = 15V VGS = 10V, ID = 13A VDS = 15V VGS = -10V, ID = 13A Q2 10 nC Q1 10 VGS = 4.5V Q2 5.8 Q1 5.5 Gate-Source Charge2 Qgs Q2 1.3 Q1 1.5 Gate-Drain Charge2 Qgd Q2 2.6 Q1 2.5 Turn-On Delay Time2 td(on) Q2 , VDS = 15V ID 13A VGS = 10V, RGEN =6Ω Q1 , VDS = 15V ID 13A, VGS = 10V, RGEN =6Ω Q2 8.9 nS Q1 8.4 Rise Time2 tr Q2 70 Q1 58 Turn-Off Delay Time2 td(off) Q2 21 Q1 19 Fall Time2 tf Q2 97 Q1 74 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current IS Q2 17.5 A Q1 14 Forward Voltage1 VSD IF = 13A VGS = 0V Q2 1.2 V IF = 13A, VGS = 0V Q1 1.2 Reverse Recovery Time trr Q2 IF = 13A dlF/dt = 100A / S IF = 13A, dlF/dt = 100A / S Q2 14 nS Q1 14 Reverse Recovery Charge Qrr Q2 4.3 nC Q1 4.2 1Pulse test : Pulse Width 300 sec, Duty Cycle 2％. 2Independent of operating temperature.
REV1.0 M-23-3 Dual N-Channel Enhancement Mode Field Effect Transistor PE854DT PDFN 3x3S Halogen-Free & Lead-Free NIKO-SEM VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) Capacitance Characteristic C , Capacitance(pF) Gate charge Characteristics Characteristics VGS , Gate-To-Source Voltage(V) On-Resistance VS Gate-To-Source Voltage RDS(ON)ON-Resistance(OHM) VGS, Gate-To-Source Voltage(V) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) ID , Drain-To-Source Current(A) 0 1 2 3 4 5 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V VGS=2.7V VGS=2.9V VGS=2.5V VGS=2.3V 25℃ 125℃ -20℃ 0 1 2 3 4 5 0.003 0.006 0.009 0.012 0.015 0 6 12 18 24 30 VGS=10V VGS=4.5V 0.006 0.012 0.018 0.024 0.03 2 4 6 8 10 ID=13A CISS COSS CRSS 100 1000 10000 0 7 14 21 28 35 0 3 6 9 12 VDS=15V ID=13A Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VDS, Drain-To-Source Voltage(V) Qg , Total Gate Charge(nC) TYPICAL PERFORMANCE CHARACTERISTICS
REV1.0 M-23-3 Dual N-Channel Enhancement Mode Field Effect Transistor PE854DT PDFN 3x3S Halogen-Free & Lead-Free NIKO-SEM Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Source-Drain Diode Forward Voltage IS , Source Current(A) Safe Operating Area Single Pulse Maximum Power Dissipation ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration(sec) VSD, Source-To-Drain Voltage(V) On-Resistance VS Temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=13A 150℃ 25℃ 0.1 100 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 67 ˚C/W TA = 25˚C DC 100ms 10ms 1ms 100uS 0.01 0.1 100 0.1 1 10 100 NOTE : 1.VGS = 10V 2.TA =25˚C 3.RθJA = 67 ˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 67 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA
REV1.0 M-23-3 Dual N-Channel Enhancement Mode Field Effect Transistor PE854DT PDFN 3x3S Halogen-Free & Lead-Free NIKO-SEM Safe Operating Area Single Pulse Maximum Power Dissipation ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration(S) 120 0.001 0.01 0.1 1 10 100 Single Pulse RθJC = 6.2 ˚C/W TC = 25˚C DC 100ms 10ms 1ms 100uS 0.1 100 0.1 1 10 100 NOTE : 1.VGS = 10V 2.TC =25˚C 3.RθJC = 6.2 ˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJC = 6.2 ℃/W 3.TJ-TC = P*RthJC(t) 4.RthJC(t) = r(t)*RthJC
REV1.0 M-23-3 Dual N-Channel Enhancement Mode Field Effect Transistor PE854DT PDFN 3x3S Halogen-Free & Lead-Free NIKO-SEM VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) Capacitance Characteristic C , Capacitance(pF) Gate charge Characteristics Characteristics VGS , Gate-To-Source Voltage(V) On-Resistance VS Gate-To-Source Voltage RDS(ON)ON-Resistance(OHM) VGS, Gate-To-Source Voltage(V) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) ID , Drain-To-Source Current(A) 0 1 2 3 4 5 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V VGS=2.8V VGS=3V VGS=2.6V VGS=2.4V 0.003 0.006 0.009 0.012 0.015 0 6 12 18 24 30 VGS=10V VGS=4.5V 0.006 0.012 0.018 0.024 0.03 2 4 6 8 10 ID=13A CISS COSS CRSS 100 1000 10000 0 7 14 21 28 35 0 3 6 9 12 VDS=15V ID=13A 25℃ 125℃ -20℃ 0 1 2 3 4 5 Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VDS, Drain-To-Source Voltage(V) Qg , Total Gate Charge(nC)
REV1.0 M-23-3 Dual N-Channel Enhancement Mode Field Effect Transistor PE854DT PDFN 3x3S Halogen-Free & Lead-Free NIKO-SEM Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Source-Drain Diode Forward Voltage IS , Source Current(A) Safe Operating Area Single Pulse Maximum Power Dissipation ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration(sec) VSD, Source-To-Drain Voltage(V) On-Resistance VS Temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=13A 150℃ 25℃ 0.1 100 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 70 ˚C/W TA = 25˚C DC 100ms 10ms 1ms 100uS 0.01 0.1 100 0.1 1 10 100 NOTE : 1.VGS = 10V 2.TA =25˚C 3.RθJA = 70 ˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 70 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA
REV1.0 M-23-3 Dual N-Channel Enhancement Mode Field Effect Transistor PE854DT PDFN 3x3S Halogen-Free & Lead-Free NIKO-SEM Safe Operating Area Single Pulse Maximum Power Dissipation ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration(S) DC 100ms 10ms 1ms 100uS 0.1 100 0.1 1 10 100 NOTE : 1.VGS = 10V 2.TC =25˚C 3.RθJC = 6.5 ˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) 120 0.001 0.01 0.1 1 10 100 Single Pulse RθJC = 6.5 ˚C/W TC = 25˚C single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJC = 6.5 ℃/W 3.TJ-TC = P*RthJC(t) 4.RthJC(t) = r(t)*RthJC