PE6W8DX NIKOSEM | Alldatasheet
Document overview
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- PDF pages: 5
Technical content
Features
- Pb−Free, Halogen Free and RoHS compliant.
- Low RDS(on) to Minimize Conduction Losses.
- Ohmic Region Good RDS(on) Ratio.
- Optimized Gate Charge to Minimize Switching Losses.
Applications
- Protection Circuits Applications.
- Protable Devices for Battery PACK Applications. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 40 V Gate-Source Voltage VGS ±20 V Continuous Drain Current TC = 25 °C ID A TC = 100 °C 13 TA = 25 °C 7.2 TA = 70 °C 5.8 Pulsed Drain Current1 IDM 41 Avalanche Current IAS 8.1 Avalanche Energy L = 0.1mH EAS 3.3 mJ Power Dissipation TC = 25 °C PD 19.8 W TC = 100 °C 7.9 TA = 25 °C 2.5 TA = 70 °C 1.6 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient2 t ≦10s RJA °C / W Steady-State 77 Junction-to-Case Steady-State RJC 6.3 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C G : GATE D : DRAIN S : SOURCE
REV1.0 M-17-5 Dual N-Channel Enhancement Mode Field Effect Transistor PE6W8DX PDFN 3x3P Halogen-Free & Lead-Free NIKO-SEM ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 40 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 1.3 1.7 2.3 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = 40V, VGS = 0V 1 VDS = 40V, VGS = 0V, TJ = 55 °C 10 Drain-Source On-State Resistance1 RDS(ON) VGS = 4.5V, ID = 6.4A 16.6 28 mΩ VGS = 10V, ID = 6.4A 13.5 20 Forward Transconductance1 gfs VDS = 10V, ID = 6.4A 31 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = 20V, f = 1MHz 603 pF Output Capacitance Coss 91 Reverse Transfer Capacitance Crss 74 Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 3.6 Ω Total Gate Charge2 Qg(VGS=10V) VDS = 20V , ID = 6.4A nC Qg(VGS=4.5V) 8.4 Gate-Source Charge2 Qgs 2.4 Gate-Drain Charge2 Qgd 4.4 Turn-On Delay Time2 td(on) VDD = 20V ID 6.4A, VGEN = 10V, RG =6Ω 7.2 nS Rise Time2 tr 26 Turn-Off Delay Time2 td(off) 27 Fall Time2 tf 40 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current3 IS 15 A Forward Voltage1 VSD IF = 6.4A, VGS = 0V 1.3 V Reverse Recovery Time trr IF = 6.4A , dlF/dt = 100A / S 9 nS Reverse Recovery Charge Qrr 3.6 nC 1Pulse test : Pulse Width 300 sec, Duty Cycle 2％. 2Independent of operating temperature.
REV1.0 M-17-5 Dual N-Channel Enhancement Mode Field Effect Transistor PE6W8DX PDFN 3x3P Halogen-Free & Lead-Free NIKO-SEM Output Characteristics Transfer Characteristics ID, Drain-To-Source Current(A) VGS , Gate-To-Source Voltage(V) C , Capacitance(pF) ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) Gate charge Characteristics Characteristics Capacitance Characteristic VDS, Drain-To-Source Voltage(V) Qg , Total Gate Charge(nC) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) ID , Drain-To-Source Current(A) On-Resistance VS Gate-To-Source Voltage RDS(ON)ON-Resistance(OHM) VGS, Gate-To-Source Voltage(V) 25℃ 125℃ -20℃ 0 1 2 3 4 5 0 1 2 3 4 5 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V VGS=3.1V VGS=3V VGS=3.3V VGS=2.9V VGS=2.7V 0.01 0.02 0.03 0.04 0.05 0 6 12 18 24 30 VGS=10V VGS=4.5V 0.01 0.02 0.03 0.04 0.05 2 4 6 8 10 ID=6.4A CISS COSS CRSS 100 200 300 400 500 600 700 0 8 16 24 32 40 0 4 8 12 16 20 VDS=40V ID=6.4A
REV1.0 M-17-5 Dual N-Channel Enhancement Mode Field Effect Transistor PE6W8DX PDFN 3x3P Halogen-Free & Lead-Free NIKO-SEM Source-Drain Diode Forward Voltage IS , Source Current(A) Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Safe Operating Area Single Pulse Maximum Power Dissipation ID , Drain Current(A) Power(W) VDS, Drain-To-Source Voltage(V) Single Pulse Time(s) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance VSD, Source-To-Drain Voltage(V) On-Resistance VS Temperature T1 , Square Wave Pulse Duration[sec] 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=6.4A 150℃ 25℃ 0.1 100 single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 68 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 77 ˚C/W TA = 25˚C DC 100ms 10ms 1ms 0.01 0.1 100 0.1 1 10 100 NOTE : 1.VGS = 10V 2.TA =25˚C 3.RθJA = 77 ˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON)
REV1.0 M-17-5 Dual N-Channel Enhancement Mode Field Effect Transistor PE6W8DX PDFN 3x3P Halogen-Free & Lead-Free NIKO-SEM Safe Operating Area Single Pulse Maximum Power Dissipation ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration[sec] 120 150 0.001 0.01 0.1 1 10 100 Single Pulse RθJC = 6.3 ˚C/W TC = 25˚C single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJC = 6.3 ℃/W 3.TJ-TC = P*RthJC(t) 4.RthJC(t) = r(t)*RthJC DC 100ms 10ms 1ms 0.1 100 0.1 1 10 100 NOTE : 1.VGS = 10V 2.TC =25˚C 3.RθJC = 6.3 ˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON)