PE6D2DX NIKOSEM | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 6
Technical content
Features
- Pb−Free, Halogen Free and RoHS compliant.
- Low RDS(on) to Minimize Conduction Losses.
- Ohmic Region Good RDS(on) Ratio.
- Optimized Gate Charge to Minimize Switching Losses.
Applications
- Protection Circuits Applications.
- Protable Devices for Battery PACK Applications. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 40 V Gate-Source Voltage VGS ±20 V Continuous Drain Current TC = 25 °C ID A TC = 100 °C 11 TA = 25 °C 6.9 TA = 70 °C 5.5 Pulsed Drain Current1 IDM 30 Avalanche Current IAS 14 Avalanche Energy L = 0.1mH EAS 9.8 mJ Power Dissipation TC = 25 °C PD W TC = 100 °C 7.1 TA = 25 °C 2.5 TA = 70 °C 1.6 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C G : GATE D : DRAIN S : SOURCE
REV1.1 M-29-1 Dual N-Channel Enhancement Mode Field Effect Transistor PE6D2DX PDFN 3x3P Halogen-Free & Lead-Free NIKO-SEM THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient2 t ≦10s RJA °C / W Junction-to-Ambient2 Steady-State 90 Junction-to-Case Steady-State RJC 7 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 40 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 1.3 1.7 2.3 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = 40V, VGS = 0V 1 VDS = 40V, VGS = 0V, TJ = 55 °C 10 Drain-Source On-State Resistance1 RDS(ON) VGS = 4.5V, ID = 6.9A 22 35 mΩ VGS = 10V, ID = 6.9A 19 25 Forward Transconductance1 gfs VDS = 10V, ID = 6.9A 28 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = 20V, f = 1MHz 413 pF Output Capacitance Coss 63 Reverse Transfer Capacitance Crss 41 Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 4.2 Ω Total Gate Charge2,3 Qg(VGS=10V) VDS = 20V , ID = 6.9A 9.8 nC Qg(VGS=4.5V) 5.4 7 Gate-Source Charge2,3 Qgs 1 Gate-Drain Charge2,3 Qgd 3.1 Turn-On Delay Time2 td(on) VDD = 0V ID 6.9A, VGEN = 10V, RG =6Ω nS Rise Time2 tr 65 Turn-Off Delay Time2 td(off) 17 Fall Time2 tf 101
REV1.1 M-29-1 Dual N-Channel Enhancement Mode Field Effect Transistor PE6D2DX PDFN 3x3P Halogen-Free & Lead-Free NIKO-SEM SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current3 IS 13 A Forward Voltage1 VSD IF = 6.9A, VGS = 0V 1.3 V Reverse Recovery Time trr IF = 6.9A , dlF/dt = 100A / S 3.3 nS Reverse Recovery Charge Qrr 1 nC 1Pulse test : Pulse Width 300 sec, Duty Cycle 2％. 2Independent of operating temperature. 3Guaranteed by design, not subject to production testing
REV1.1 M-29-1 Dual N-Channel Enhancement Mode Field Effect Transistor PE6D2DX PDFN 3x3P Halogen-Free & Lead-Free NIKO-SEM Output Characteristics Transfer Characteristics ID, Drain-To-Source Current(A) ID, Drain-To-Source Current(A) VDS, Drain-To-Source Voltage(V) VGS, Gate-To-Source Voltage(V) On-Resistance VS Gate-To-Source Voltage On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) RDS(ON)ON-Resistance(OHM) VGS, Gate-To-Source Voltage(V) ID , Drain-To-Source Current(A) On-Resistance VS Temperature Capacitance Characteristic Normalized Drain to Source ON-Resistance C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) TJ , Junction Temperature(˚C) 25℃ 125℃ -20℃ 0 1 2 3 4 5 0 1 2 3 4 5 6 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V VGS=3.1V VGS=2.9V VGS=2.6V 0.01 0.02 0.03 0.04 0.05 0 6 12 18 24 30 VGS=10V VGS=4.5V 0.02 0.04 0.06 0.08 0.1 2 4 6 8 10 ID=6.9A CISS COSS CRSS 100 150 200 250 300 350 400 450 500 0 8 16 24 32 40 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=6.9A
REV1.1 M-29-1 Dual N-Channel Enhancement Mode Field Effect Transistor PE6D2DX PDFN 3x3P Halogen-Free & Lead-Free NIKO-SEM VGS , Gate-To-Source Voltage(V) Source-Drain Diode Forward Voltage Gate charge Characteristics Characteristics IS , Source Current(A) Qg , Total Gate Charge(nC) VSD, Source-To-Drain Voltage(V) Single Pulse Maximum Power Dissipation Safe Operating Area ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration(s) 0 2 4 6 8 10 VDS=40V ID=6.9A 150℃ 25℃ 0.1 100 DC 100ms 10ms 1ms 0.01 0.1 100 0.1 1 10 100 NOTE : 1.VGS = 10V 2.TA =25˚C 3.RθJA = 90 ˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 90 ˚C/W TA = 25˚C single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 90 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA
REV1.1 M-29-1 Dual N-Channel Enhancement Mode Field Effect Transistor PE6D2DX PDFN 3x3P Halogen-Free & Lead-Free NIKO-SEM Safe Operating Area Single Pulse Maximum Power Dissipation ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration(s) DC 100ms 10ms 1ms 0.1 100 0.1 1 10 100 NOTE : 1.VGS = 10V 2.TC =25˚C 3.RθJC = 7 ˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) 100 0.001 0.01 0.1 1 10 100 Single Pulse RθJC = 7 ˚C/W TC = 25˚C single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJC = 7 ℃/W 3.TJ-TC = P*RthJC(t) 4.RthJC(t) = r(t)*RthJC