PE6B0SA NIKOSEM | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 5
Technical content
Features
- Pb−Free, Halogen Free and RoHS compliant.
- Low RDS(on) to Minimize Conduction Losses.
- Ohmic Region Good RDS(on) Ratio.
- Optimized Gate Charge to Minimize Switching Losses.
- Products Integrated Schottky Diode.
Applications
- Computer for DC to DC Converters Applications. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current3 TC = 25 °C ID A TC = 100 °C 26 TA = 25 °C 16 TA = 70 °C 13 Pulsed Drain Current1 IDM 80 Avalanche Current IAS 25 Avalanche Energy L = 0.1mH EAS 31 mJ Power Dissipation4 TC = 25 °C PD 17.8 W TC = 100 °C 7 TA = 25 °C 2.7 TA = 70 °C 1.7 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C G : GATE D : DRAIN S : SOURCE
REV1.2 J-8-4 N-Channel Enhancement Mode Field Effect Transistor PE6B0SA PDFN 3x3P Halogen-Free & Lead-Free NIKO-SEM THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient2 t≦10s RJA 45 °C / W Steady-State RJA 65 Junction-to-Case Steady-State RJC 7 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. 3Package limitation current is 27A 4The Power dissipation is based on RJA t ≦10s value. ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 1mA 30 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 1.35 1.85 2.3 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = 24V, VGS = 0V 0.5 mA VDS = 20V, VGS = 0V, TJ = 55 °C 5 Drain-Source On-State Resistance1 RDS(ON) VGS = 4.5V, ID = 15A 5.7 7.8 mΩ VGS = 10V, ID = 15A 3.9 5 Forward Transconductance1 gfs VDS = 5V, ID = 15A 50 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = 15V, f = 1MHz 1200 pF Output Capacitance Coss 235 Reverse Transfer Capacitance Crss 152 Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 2.4 Ω Total Gate Charge2 Qg(VGS=10V) VDS = 15V , ID = 15A nC Qg(VGS=4.5V) 13 Gate-Source Charge2 Qgs 3.3 Gate-Drain Charge2 Qgd 8
REV1.2 J-8-4 N-Channel Enhancement Mode Field Effect Transistor PE6B0SA PDFN 3x3P Halogen-Free & Lead-Free NIKO-SEM Turn-On Delay Time2 td(on) VDD = 15V ID 15A, VGEN = 10V, RG =6Ω nS Rise Time2 tr 10 Turn-Off Delay Time2 td(off) 40 Fall Time2 tf 12 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current IS 17.8 A Forward Voltage1 VSD IF = 15A, VGS = 0V 1 V Reverse Recovery Time trr IF = 15A , dlF/dt = 100A / S 11 nS Reverse Recovery Charge Qrr 1.5 nC 1Pulse test : Pulse Width 300 sec, Duty Cycle 2％. 2Independent of operating temperature.
REV1.2 J-8-4 N-Channel Enhancement Mode Field Effect Transistor PE6B0SA PDFN 3x3P Halogen-Free & Lead-Free NIKO-SEM 0 1 2 3 4 5 On-Resistance VS Gate-To-Source Voltage RDS(ON)ON-Resistance(OHM) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) ID , Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) Capacitance Characteristic C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) Gate charge Characteristics Characteristics VGS , Gate-To-Source Voltage(V) Qg , Total Gate Charge(nC) 25℃ 125℃ -20℃ CRSS 200 400 600 800 1000 1200 1400 0 5 10 15 20 25 30 0 6 12 18 24 30 VDS=15V ID=15A 0 1 2 3 4 5 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V VGS=4V VGS=3.5V 0.002 0.004 0.006 0.008 0.01 2 4 6 8 10 ID=15A 0.002 0.004 0.006 0.008 0.01 0 6 12 18 24 30 VGS=10V VGS=4.5V CISS COSS
REV1.2 J-8-4 N-Channel Enhancement Mode Field Effect Transistor PE6B0SA PDFN 3x3P Halogen-Free & Lead-Free NIKO-SEM DC 100ms 10ms 1ms 0.01 0.1 100 1000 0.1 1 10 100 NOTE : 1.VGS= 10V 2.TA=25˚C 3.RθJA = 65˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) On-Resistance VS Temperature Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Source-Drain Diode Forward Voltage IS , Source Current(A) Safe Operating Area Single Pulse Maximum Power Dissipation ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration[sec] VSD, Source-To-Drain Voltage(V) 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=15A 25℃ 150℃ 0.1 100 single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 65 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 65˚C/W TA=25˚C