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Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 5
Technical content
Features
- Pb−Free, Halogen Free and RoHS compliant.
- Low R DS(on) to Minimize Conduction Losses.
- Ohmic Region Good RDS(on) Ratio.
- Optimized Gate Charge to Minimize Switching Losses.
Applications
- Protection Circuits Applications.
- Logic/Load Switch Circuits Applications. ABSOLUTE MAXIMUM RATINGS (T A = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage V DS 40 V Gate-Source Voltage V GS ±20 V Continuous Drain Current4 TC = 25 °C ID A TC = 100 °C 20 Pulsed Drain Current1 I DM 51 Continuous Drain Current4 TA = 25 °C ID TA = 70 °C 9 Avalanche Current I AS 21 Avalanche Energy L = 0.1mH E AS 22 mJ Power Dissipation TC = 25 °C PD 26.5 W TC = 100 °C 10.6 Power Dissipation3 TA = 25 °C PD 3.1 W TA = 70 °C 2 Operating Junction & Storage Temperature Range T j, Tstg -55 to 150 °C G. GATE D. DRAIN S. SOURCE PRODUCT SUMMARY V(BR)DSS R DS(ON) I D 40V 12mΩ 32A
REV1.0 H-2-5 N-Channel Enhancement Mode Field Effect Transistor PE6A4BA PDFN 3x3P Halogen-Free & Lead-Free NIKO-SEM THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient2 t ≦10s RJA 40 °C / W Junction-to-Ambient2 Steady-State RJA 61 Junction-to-Case Steady-State RJC 4.7 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. 3The Power dissipation is based on RJA t ≦10s value. 4Package limitation current is 20A. ELECTRICAL CHARACTERISTICS (T J = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITMIN TYP MAX STATIC Drain-Source Breakdown Voltage V (BR)DSS VGS = 0V, ID = 250A 40 V Gate Threshold Voltage V GS(th) VDS = VGS, ID = 250A 1.3 1.75 2.3 Gate-Body Leakage I GSS V DS = 0V, VGS = ±20V ±100 nA Zero Gate Voltage Drain Current I DSS VDS = 32V, VGS = 0V 1 VDS = 30V, VGS = 0V, TJ = 55 °C 10 Drain-Source On-State Resistance1 RDS(ON) VGS = 4.5V, ID = 11A 9.5 16 mΩ VGS = 10V, ID = 11A 8.2 12 Forward Transconductance1 g fs V DS = 5V, ID = 11A 80 S DYNAMIC Input Capacitance C iss VGS = 0V, VDS = 20V, f = 1MHz 962 pFOutput Capacitance C oss 111 Reverse Transfer Capacitance C rss 69 Gate Resistance R g V GS = 0V, VDS = 0V, f = 1MHz 1.8 Ω Total Gate Charge2 Q g VGS = 10V VDS = 20V , VGS = 10V, ID = 11A nC VGS = 4.5V 9.6 Gate-Source Charge2 Q gs 2.4 Gate-Drain Charge2 Q gd 4.5 Turn-On Delay Time2 t d(on) VDS = 20V , ID 11A, VGS = 10V, RGEN =6Ω nS Rise Time2 t r 12 Turn-Off Delay Time2 t d(off) 31 Fall Time2 t f 13
REV1.0 H-2-5 N-Channel Enhancement Mode Field Effect Transistor PE6A4BA PDFN 3x3P Halogen-Free & Lead-Free NIKO-SEM SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current3 I S 20 A Forward Voltage1 V SD I F = 11A, VGS = 0V 1.3 V Reverse Recovery Time t rr IF = 11A, dlF/dt = 100A / S 9.5 nS Reverse Recovery Charge Q rr 2 nC 1Pulse test : Pulse Width 300 sec, Duty Cycle 2％. 2Independent of operating temperature. 3Package limitation current is 20A.
REV1.0 H-2-5 N-Channel Enhancement Mode Field Effect Transistor PE6A4BA PDFN 3x3P Halogen-Free & Lead-Free NIKO-SEM 0 4 8 12 16 20 VDS=15V ID=11A CISS COSS CRSS 200 400 600 800 1000 1200 0 5 10 15 20 25 30 0.01 0.02 0.03 0.04 0.05 2468 1 0 ID=11A 0.004 0.008 0.012 0.016 0.02 0 6 12 18 24 30 VGS=10V VGS=4.5V 0123456 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V VGS=2.8V VGS=2.6V VGS=2.7V 25℃ 125℃ -20℃ 012345 On-Resistance VS Gate-To-Source RDS(ON)ON-Resistance(OHM) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) ID , Drain-To-Source Current(A)VGS, Gate-To-Source Voltage(V) Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) Capacitance Characteristic C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) Gate charge Characteristics VGS , Gate-To-Source Voltage(V) Qg , Total Gate Charge(nC)
REV1.0 H-2-5 N-Channel Enhancement Mode Field Effect Transistor PE6A4BA PDFN 3x3P Halogen-Free & Lead-Free NIKO-SEM single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 61 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA DC 100ms 10ms 1ms 0.01 0.1 100 0.1 1 10 100 NOTE : 1.VGS= 10V 2.TA=25˚C 3.RθJA = 61 ˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 61 ˚C/W TA=25˚C 25℃ 150℃ 0.1 100 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=11A Safe Operating Area Single Pulse Maximum Power Dissipation ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance On-Resistance VS Temperature Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Source-Drain Diode Forward Voltage IS , Source Current(A) T1 , Square Wave Pulse Duration[sec] VSD, Source-To-Drain Voltage(V)