DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 7
Technical content
REV 1.0 G-20-2 Dual N-Channel Enhancement Mode Field Effect Transistor PE674DT PDFN 3x3S Halogen-Free & Lead-Free NIKO-SEM ABSOLUTE MAXIMUM RATINGS (T A = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Q2 Q1 UNITS Drain-Source Voltage V DS 30 30 V Gate-Source Voltage V GS ±20 ±20 V Continuous Drain Current3 TC = 25 °C ID 39 31 A TC = 100 °C 25 20 Pulsed Drain Current1 I DM 50 45 Continuous Drain Current3 TA = 25 °C ID 12 9.5 TA = 70 °C 10 7.6 Avalanche Current I AS 23 17.5 Avalanche Energy L = 0.1mH E AS 26.4 15.3 mJ Power Dissipation TC = 25 °C PD 20 19 W TC = 100 °C 8.3 7.6 Power Dissipation TA = 25 °C PD 2.2 1.7 W TA = 70 °C 1.4 1.1 Operating Junction & Storage Temperature Range T j, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient2 RJA Q2 56 °C / W RJA Q1 72 Junction-to-Case RJC Q2 6 RJC Q1 6.5 1Pulse width limited by maximum junction temperature TJ(MAX)=150°C. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. 3Package limitation current is Q2=19A , Q1=11A. PRODUCT SUMMARY V (BR)DSS R DS(ON) ID Q2 30V 7mΩ 39A Q1 30V 10.5mΩ 31A 1 : G1 2,3,4 : D1 5,6,7 : S2 8 : G2 9 : S1/D2
REV 1.0 G-20-2 Dual N-Channel Enhancement Mode Field Effect Transistor PE674DT PDFN 3x3S Halogen-Free & Lead-Free NIKO-SEM ELECTRICAL CHARACTERISTICS (T J = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITMIN TYP MAX STATIC Drain-Source Breakdown Voltage V (BR)DSS VGS = 0V, ID = 250A Q2 30 V Q1 30 Gate Threshold Voltage V GS(th) VDS = VGS, ID = 250A Q2 1.3 1.75 2.3 Q1 1.3 1.75 2.3 Gate-Body Leakage I GSS V DS = 0V, VGS = ±20V Q2 ±100 nA Q1 ±100 Zero Gate Voltage Drain Current I DSS VDS = 24V, VGS = 0V Q2 1 Q1 1 VDS = 20V, VGS = 0V, TJ = 55 °C Q2 10 Q1 10 Drain-Source On-State Resistance1 RDS(ON) VGS =4.5V, ID = 10A Q2 6.7 9.5 mΩ VGS =4.5V, ID = 9A Q1 10.2 15.5 VGS = 10V, ID = 10A Q2 5 7 VGS = 10V, ID = 9.5A Q1 7.5 10.5 Forward Transconductance1 g fs VDS = 5V, ID = 10A Q2 66 S VDS = 5V, ID = 9.5A Q1 50 DYNAMIC Input Capacitance C iss VGS = 0V, VDS = 15V, f = 1MHz Q2 961 pF Q1 627 Output Capacitance C oss Q2 185 Q1 129 Reverse Transfer Capacitance C rss Q2 121 Q1 97 Total Gate Charge2 Q g VGS = 10V VDS = 15V , VGS = 10V, ID = 10A VDS = 15V , VGS = 10V, ID = 9.5A Q2 19.3 nC Q1 14 VGS = 4.5V Q2 11.2 Q1 7.8 Gate-Source Charge2 Q gs Q2 2.1 Q1 1.6 Gate-Drain Charge2 Q gd Q2 5.9 Q1 4.1
REV 1.0 G-20-2 Dual N-Channel Enhancement Mode Field Effect Transistor PE674DT PDFN 3x3S Halogen-Free & Lead-Free NIKO-SEM Turn-On Delay Time2 t d(on) VDS = 15V , ID 10A, VGS = 10V, RGEN =6Ω VDS = 15V , ID 9.5A, VGS = 10V, RGEN =6Ω Q2 13 nS Q1 12 Rise Time2 t r Q2 57 Q1 48 Turn-Off Delay Time2 t d(off) Q2 35 Q1 27 Fall Time2 t f Q2 70 Q1 39 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current3 I S Q2 16 A Q1 17 Forward Voltage1 V SD IF = 10A, VGS = 0V Q2 1.2 V IF = 9.5A, VGS = 0V Q1 1.1 Reverse Recovery Time t rr Q2 IF = 10A, dlF/dt = 100A / S IF = 9.5A, dlF/dt = 100A / S Q2 12 nS Q1 10.5 Reverse Recovery Charge Q rr Q2 3 nC Q1 3 1Pulse test : Pulse Width 300 sec, Duty Cycle 2％. 2Independent of operating temperature. 3Package limitation current is Q2=19A , Q1=11A.
REV 1.0 G-20-2 Dual N-Channel Enhancement Mode Field Effect Transistor PE674DT PDFN 3x3S Halogen-Free & Lead-Free NIKO-SEM 0 4 8 12 16 20 VDS=15V ID=10A CISS COSS CRSS 200 400 600 800 1000 1200 0 5 10 15 20 25 30 0.01 0.02 0.03 0.04 0.05 2468 1 0 ID=10A 0.003 0.006 0.009 0.012 0.015 0 6 12 18 24 30 VGS=10V VGS=4.5V 0123456 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V VGS=2.7V VGS=2.5V VGS=3V 25℃ 125℃ -20℃ 012345 ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) Gate charge Characteristics Ca pacitance Characteristic VGS , Gate-To-Source Voltage(V) C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) Qg , Total Gate Charge(nC) On-Resistance VS Gate-To-Source RDS(ON)ON-Resistance(OHM) On-Resistance VS Drain Current VGS, Gate-To-Source Voltage(V) I D , Drain-To-Source Current(A) TYPICAL PERFORMANCE CHARACTERISTICS Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics RDS(ON)ON-Resistance(OHM)
REV 1.0 G-20-2 Dual N-Channel Enhancement Mode Field Effect Transistor PE674DT PDFN 3x3S Halogen-Free & Lead-Free NIKO-SEM single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 56 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA DC 100ms 10ms 1ms 0.01 0.1 100 0.1 1 10 100 NOTE : 1.VGS = 10V 2.TA = 25˚C 3.RθJA = 56 ˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 56˚C/W TA = 25˚C 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=20A 25℃150℃ 0.1 100 TJ , Junction Temperature(˚C) V SD, Source-To-Drain Voltage(V) On-Resistance VS Temperature Normalized Drain to Source ON-Resistance IS , Source Current(A) Safe Operating Area Single Pulse Maximum Power Dissipation ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration[sec] Source-Drain Diode Forward Voltage
REV 1.0 G-20-2 Dual N-Channel Enhancement Mode Field Effect Transistor PE674DT PDFN 3x3S Halogen-Free & Lead-Free NIKO-SEM 0369 1 2 1 5 VDS=15V ID=9.5A CISS COSS CRSS 100 200 300 400 500 600 700 800 0 5 10 15 20 25 30 0.01 0.02 0.03 0.04 0.05 2468 1 0 ID=9.5A 25℃ 125℃ -20℃ 012345 0.004 0.008 0.012 0.016 0.02 0 6 12 18 24 30 VGS=10V VGS=4.5V
0123456 VGS=10V
VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V VGS=2.7V VGS=2.5V VGS=3V ID, Drain-To-Source Current(A) Gate charge Characteristics Ca pacitance Characteristic VGS , Gate-To-Source Voltage(V) C , Capacitance(pF) Qg , Total Gate Charge(nC) V DS, Drain-To-Source Voltage(V) VGS, Gate-To-Source Voltage(V) RDS(ON)ON-Resistance(OHM) On-Resistance VS Gate-To-Source On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) ID , Drain-To-Source Current(A) Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics VDS, Drain-To-Source Voltage(V) VGS, Gate-To-Source Voltage(V)
REV 1.0 G-20-2 Dual N-Channel Enhancement Mode Field Effect Transistor PE674DT PDFN 3x3S Halogen-Free & Lead-Free NIKO-SEM single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 72 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA DC 100ms 10ms 1ms 0.01 0.1 100 0.1 1 10 100 NOTE : 1.VGS = 10V 2.TA = 25˚C 3.RθJA = 72 ˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 72˚C/W TA = 25˚C 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=9.5A 25℃150℃ 0.1 100 Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration[sec] Source-Drain Diode Forward Voltage IS , Source Current(A) Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) V SD, Source-To-Drain Voltage(V) On-Resistance VS Temperature Safe Operating Area Single Pulse Maximum Power Dissipation ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V)