PE632BA NIKOSEM | Alldatasheet

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REV 1.0 D-33-3 N-Channel Enhancement Mode Field Effect Transistor PE632BA PDFN 3x3P Halogen-Free & Lead-Free NIKO-SEM PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 30V 4.5mΩ 53A ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current2 TC = 25 °C ID A TC = 100 °C 33 TA = 25 °C 15 TA = 70 °C 12 Pulsed Drain Current1 IDM 100 Avalanche Current IAS 37.5 Avalanche Energy L = 0.1mH EAS 70 mJ Power Dissipation TC = 25 °C PD 22.7 W TC = 100 °C 9 TA = 25 °C 2 TA = 70 °C 1.3 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient3 RJA 63 °C／W Junction-to-case RJC 5.5 1Pulse width limited by maximum junction temperature. 2Package limitation current is 23A 3The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 30 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 1.3 1.7 2.3 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 nA G D S G : GATE D : DRAIN S : SOURCE GSSS#1 D D D D

REV 1.0 D-33-3 N-Channel Enhancement Mode Field Effect Transistor PE632BA PDFN 3x3P Halogen-Free & Lead-Free NIKO-SEM Zero Gate Voltage Drain Current IDSS VDS = 24V, VGS = 0V 1 VDS = 20V, VGS = 0V, TJ = 125 °C 10 Drain-Source On-State Resistance1 RDS(ON) VGS = 4.5V, ID = 15A 4 5.5 mΩ VGS = 10V, ID = 15A 3.3 4.5 Forward Transconductance1 gfs VDS = 5V, ID = 15A 60 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = 15V, f = 1MHz 2210 pF Output Capacitance Coss 390 Reverse Transfer Capacitance Crss 234 Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 1.4 Ω Total Gate Charge2 Qg(VGS=10V) VDS = 15V, ID = 15A 44.1 nC Qg(VGS=4.5V) 23 Gate-Source Charge2 Qgs 6 Gate-Drain Charge2 Qgd 13 Turn-On Delay Time2 td(on) VDD = 15V ID  15A, VGEN = 10V, RG = 6Ω nS Rise Time2 tr 15 Turn-Off Delay Time2 td(off) 54 Fall Time2 tf 17 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current IS 22.7 A Forward Voltage1 VSD IF = 15A, VGS = 0V 1 V Reverse Recovery Time trr IF = 15A , dlF/dt = 100A / S 26.7 nS Reverse Recovery Charge Qrr 12.9 nC 1Pulse test : Pulse Width  300 sec, Duty Cycle  2％. 2Independent of operating temperature.

REV 1.0 D-33-3 N-Channel Enhancement Mode Field Effect Transistor PE632BA PDFN 3x3P Halogen-Free & Lead-Free NIKO-SEM VDS, Drain-To-Source Voltage(V) On-Resistance VS Temperature Capacitance Characteristic VDS, Drain-To-Source Voltage(V) Source-Drain Diode Forward Voltage 0 1 2 3 4 Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) TJ , Junction Temperature(˚C) C , Capacitance(pF) Gate charge Characteristics Characteristics Qg , Total Gate Charge(nC) VGS , Gate-To-Source Voltage(V) VSD, Source-To-Drain Voltage(V) IS , Source Current(A) Normalized Drain to Source ON-Resistance 125℃ -20℃ 25℃ CISS COSS CRSS 500 1000 1500 2000 2500 3000 0 5 10 15 20 25 30 0 9 18 27 36 45 VDS=15V ID=15A 0 1 2 3 4 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V VGS=3V VGS=2.5V 25℃ 150℃ 0.1 100 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=15A

REV 1.0 D-33-3 N-Channel Enhancement Mode Field Effect Transistor PE632BA PDFN 3x3P Halogen-Free & Lead-Free NIKO-SEM Safe Operating Area Single Pulse Maximum Power Dissipation ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration[sec] DC 100ms 10ms 1ms 0.01 0.1 100 1000 0.1 1 10 100 NOTE : 1.VGS= 10V 2.TA=25˚C 3.RθJA = 63˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 63˚C/W TA=25˚C single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 63 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA