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REV 1.0 E-34-4 Dual N-Channel Enhancement Mode Field Effect Transistor PE628HT PDFN 3x3S Halogen-Free & Lead-Free NIKO-SEM ABSOLUTE MAXIMUM RATINGS (T A = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Q2 Q1 UNITS Drain-Source Voltage V DS 30 30 V Gate-Source Voltage V GS ±20 ±20 V Continuous Drain Current3 TC = 25 °C ID 39 21 A TC = 100 °C 24 13 Pulsed Drain Current1 I DM 50 32 Continuous Drain Current TA = 25 °C ID 14 8 TA = 70 °C 11 6.5 Avalanche Current I AS 22 12 Avalanche Energy L = 0.1mH E AS 24 7.2 mJ Power Dissipation TC = 25 °C PD 21 16 W TC = 100 °C 8.6 6 Power Dissipation4 TA = 25 °C PD 2.7 2.5 W TA = 70 °C 1.7 1.6 Operating Junction & Storage Temperature Range T j, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Q2 Max Q1 Max UNITS Junction-to-Ambient2 t ≦10s RJA 45 50 °C / W Steady-State 55 77 Junction-to-Case Steady-State RJC 5.8 7.5 1Pulse width limited by maximum junction temperature TJ(MAX)=150°C. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. 3Package limitation current is Q2=19A , Q1=5.5A. 4The Power dissipation is based on RJA t ≦10s value. PRODUCT SUMMARY V (BR)DSS R DS(ON) ID Q2 30V 7.5mΩ 39A Q1 30V 20mΩ 21A 1 : G1 2,3,4 : D1 5,6,7 : S2 8 : G2 9 : S1/D2
REV 1.0 E-34-4 Dual N-Channel Enhancement Mode Field Effect Transistor PE628HT PDFN 3x3S Halogen-Free & Lead-Free NIKO-SEM ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITMIN TYP MAX STATIC Drain-Source Breakdown Voltage V (BR)DSS VGS = 0V, ID = 10mA Q2 30 V VGS = 0V, ID = 250A Q1 30 Gate Threshold Voltage V GS(th) VDS = VGS, ID = 250A Q2 1.3 1.7 2.3 Q1 1.3 1.7 2.3 Gate-Body Leakage I GSS V DS = 0V, VGS = ±20V Q2 ±100 nA Q1 ±100 Zero Gate Voltage Drain Current I DSS VDS = 24V, VGS = 0V Q2 0.5 mA Q1 1 uA VDS = 20V, VGS = 0V, TJ = 55 °C Q2 5 mA Q1 10 uA Drain-Source On-State Resistance1 RDS(ON) VGS =4.5V, ID = 10A Q2 7 10.5 mΩ VGS =4.5V, ID = 6A Q1 22 31 VGS = 10V, ID = 10A Q2 5.3 7.5 VGS = 10V, ID = 8A Q1 15.5 20 Forward Transconductance1 g fs VDS = 5V, ID = 10A Q2 52 S VDS = 5V, ID = 8A Q1 28 DYNAMIC Input Capacitance C iss VGS = 0V, VDS = 15V, f = 1MHz Q2 1075 pF Q1 323 Output Capacitance C oss Q2 215 Q1 71 Reverse Transfer Capacitance C rss Q2 155 Q1 47 Total Gate Charge2 Q g VGS = 10V VDS = 15V , VGS = 10V, ID = 10A VDS = 15V , VGS = 10V, ID = 8A Q2 20 nC Q1 7.7 VGS = 4.5V Q2 11 Q1 4.2 Gate-Source Charge2 Q gs Q2 2.4 Q1 1.3 Gate-Drain Charge2 Q gd Q2 5.8 Q1 2.2
REV 1.0 E-34-4 Dual N-Channel Enhancement Mode Field Effect Transistor PE628HT PDFN 3x3S Halogen-Free & Lead-Free NIKO-SEM Turn-On Delay Time2 t d(on) VDS = 15V , ID 10A, VGS = 10V, RGEN =6Ω VDS = 15V , ID 8A, VGS = 10V, RGEN =6Ω Q2 27 nS Q1 17 Rise Time2 t r Q2 25 Q1 17 Turn-Off Delay Time2 t d(off) Q2 51 Q1 37 Fall Time2 t f Q2 27 Q1 18 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current3 I S Q2 35 A Q1 11 Forward Voltage1 V SD IF = 1A, VGS = 0V Q2 0.6 V IF = 8A, VGS = 0V Q1 1.4 Reverse Recovery Time t rr Q2 IF = 10A, dlF/dt = 100A / S IF = 8A, dlF/dt = 100A / S Q2 12 nS Q1 8.4 Reverse Recovery Charge Q rr Q2 3.5 nC Q1 1.5 1Pulse test : Pulse Width 300 sec, Duty Cycle 2％. 2Independent of operating temperature. 3Package limitation current is Q2=19A , Q1=5.5A.
REV 1.0 E-34-4 Dual N-Channel Enhancement Mode Field Effect Transistor PE628HT PDFN 3x3S Halogen-Free & Lead-Free NIKO-SEM 0 4 8 1 21 62 0 VDS=15V ID=10A 0.003 0.006 0.009 0.012 0.015 2468 1 0 ID=10A 0.003 0.006 0.009 0.012 0.015 0 6 12 18 24 30 VGS=10V VGS=4.5V 25℃ 125℃ -20℃ 012345 0123456 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V VGS=3V VGS=3.5V ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) Capacitance Characteristic C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) Gate charge Characteristics VGS , Gate-To-Source Voltage(V) Qg , Total Gate Charge(nC) On-Resistance VS Gate-To-Source On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) ID , Drain-To-Source Current(A)VGS, Gate-To-Source Voltage(V) TYPICAL PERFORMANCE CHARACTERISTICS Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics RDS(ON)ON-Resistance(OHM) CISS COSS CRSS 200 400 600 800 1000 1200 1400 0 5 10 15 20 25 30
REV 1.0 E-34-4 Dual N-Channel Enhancement Mode Field Effect Transistor PE628HT PDFN 3x3S Halogen-Free & Lead-Free NIKO-SEM single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 55 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA DC 100ms 10ms 1ms 0.01 0.1 100 0.1 1 10 100 NOTE : 1.VGS = 10V 2.TA = 25˚C 3.RθJA = 55 ˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 55 ˚C/W TA = 25˚C 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=10A 25℃ 150℃ 0.1 100 Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) IS , Source Current(A) Safe Operating Area Single Pulse Maximum Power Dissipation ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration[sec] VSD, Source-To-Drain Voltage(V) On-Resistance VS Temperature Source-Drain Diode Forward Voltage
REV 1.0 E-34-4 Dual N-Channel Enhancement Mode Field Effect Transistor PE628HT PDFN 3x3S Halogen-Free & Lead-Free NIKO-SEM CISS COSS CRSS 100 150 200 250 300 350 400 0 5 10 15 20 25 30 02468 1 0 VDS=15V ID=8A 25℃ 125℃ -20℃ 012345 0.02 0.04 0.06 0.08 0.1 2468 1 0 ID=8A 0.02 0.04 0.06 0.08 0.1 0 6 12 18 24 30 VGS=10V VGS=4.5V 0123456 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V VGS=3.5V VGS=4V ID, Drain-To-Source Current(A) Capacitance Characteristic C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) Gate charge Characteristics VGS , Gate-To-Source Voltage(V) Qg , Total Gate Charge(nC) On-Resistance VS Gate-To-Source RDS(ON)ON-Resistance(OHM) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) ID , Drain-To-Source Current(A)VGS, Gate-To-Source Voltage(V) Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V)
REV 1.0 E-34-4 Dual N-Channel Enhancement Mode Field Effect Transistor PE628HT PDFN 3x3S Halogen-Free & Lead-Free NIKO-SEM single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 77 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA DC 100ms 10ms 1ms 0.01 0.1 100 0.1 1 10 100 NOTE : 1.VGS = 10V 2.TA = 25˚C 3.RθJA = 77 ˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 77 ˚C/W TA=25˚C 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=8A 25℃150℃ 0.1 100 Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Source-Drain Diode Forward Voltage IS , Source Current(A) Safe Operating Area Single Pulse Maximum Power Dissipation ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) T1 , Square Wave Pulse Duration[sec] VSD, Source-To-Drain Voltage(V) On-Resistance VS Temperature