PE628BA NIKOSEM | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

REV1.0 D-42-1 N-Channel Enhancement Mode Field Effect Transistor PE628BA PDFN 3x3P Halogen-Free & Lead-Free NIKO-SEM PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 30V 14mΩ 27A G D S GSSS#1 D D D D ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current3 TC = 25 °C ID A TC = 100 °C 17 TA = 25 °C 8 TA = 70 °C 6 Pulsed Drain Current1 IDM 66 Avalanche Current IAS 14.7 Avalanche Energy L = 0.1mH EAS 10.8 mJ Power Dissipation TC = 25 °C PD W TC = 100 °C 7 TA = 25 °C 1.7 TA = 70 °C 1.1 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient2 RJA 71.5 °C / W Junction-to-Case RJC 6.8 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. 3Package limitation current is 11A ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 30 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 1.3 1.7 2.3 G : GATE D : DRAIN S : SOURCE

REV1.0 D-42-1 N-Channel Enhancement Mode Field Effect Transistor PE628BA PDFN 3x3P Halogen-Free & Lead-Free NIKO-SEM Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = 24V, VGS = 0V 1 VDS = 20V, VGS = 0V, TJ = 55 °C 10 Drain-Source On-State Resistance1 RDS(ON) VGS = 4.5V, ID = 6.8A 14 22 mΩ VGS = 10V, ID = 7A 11 14 Forward Transconductance1 gfs VDS = 5V, ID = 7A 32 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = 15V, f = 1MHz 427 pF Output Capacitance Coss 83 Reverse Transfer Capacitance Crss 50 Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 3.8 Ω Total Gate Charge2 Qg(VGS=10V) VDS = 15V , ID = 7A 9.1 nC Qg(VGS=4.5V) 5 Gate-Source Charge2 Qgs 1.2 Gate-Drain Charge2 Qgd 2.6 Turn-On Delay Time2 td(on) VDD = 15V ID  7A, VGEN = 10V, RG =6Ω nS Rise Time2 tr 18 Turn-Off Delay Time2 td(off) 38 Fall Time2 tf 20 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current3 IS 18 A Forward Voltage1 VSD IF = 7A, VGS = 0V 1 V Reverse Recovery Time trr IF = 7A , dlF/dt = 100A / S 10.6 nS Reverse Recovery Charge Qrr 2.6 nC 1Pulse test : Pulse Width  300 sec, Duty Cycle  2％. 2Independent of operating temperature. 3Package limitation current is 11A

REV1.0 D-42-1 N-Channel Enhancement Mode Field Effect Transistor PE628BA PDFN 3x3P Halogen-Free & Lead-Free NIKO-SEM 25℃ 150℃ 0.1 100 0 2 4 6 8 10 VDS=15V ID=7A CISS COSS CRSS 100 150 200 250 300 350 400 450 500 0 5 10 15 20 25 30 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=7A 0 1 2 3 4 5 6 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V VGS=3.5V VGS=3V TJ , Junction Temperature(˚C) Capacitance Characteristic VDS, Drain-To-Source Voltage(V) Gate charge Characteristics Characteristics Qg , Total Gate Charge(nC) Source-Drain Diode Forward Voltage VSD, Source-To-Drain Voltage(V) On-Resistance VS Temperature 25℃ 125℃ -20℃ 0 1 2 3 4 5 Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) Normalized Drain to Source ON-Resistance C , Capacitance(pF) VGS , Gate-To-Source Voltage(V) IS , Source Current(A)

REV1.0 D-42-1 N-Channel Enhancement Mode Field Effect Transistor PE628BA PDFN 3x3P Halogen-Free & Lead-Free NIKO-SEM single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 71.5 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 71.5˚C/W TA=25˚C DC 100ms 10ms 1ms 0.01 0.1 100 0.1 1 10 100 NOTE : 1.VGS= 10V 2.TA=25˚C 3.RθJA = 71.5˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) Safe Operating Area Single Pulse Maximum Power Dissipation Transient Thermal Response Curve T1 , Square Wave Pulse Duration[sec] ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) r(t) , Normalized Effective Transient Thermal Resistance