PE616BA NIKOSEM | Alldatasheet

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REV 0.9 D-22-3 N-Channel Enhancement Mode Field Effect Transistor PE616BA PDFN 3x3P Halogen-Free & Lead-Free NIKO-SEM ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current TC = 25 °C ID A TC = 100 °C 23 Pulsed Drain Current1 IDM 100 Continuous Drain Current TA = 25 °C ID TA = 70 °C 9.2 Avalanche Current IAS 23 Avalanche Energy L = 0.1mH EAS 26.4 mJ Power Dissipation TC = 25 °C PD 16.7 W TC = 100 °C 6.7 Power Dissipation TA = 25 °C PD 1.7 W TA = 70 °C 1 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient2 RJA 75 °C / W Junction-to-Case RJC 7 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 30 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 1.35 1.8 3 G. GATE D. DRAIN S. SOURCE PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 30V 7mΩ 36A G D S GSSS#1 D D D D

REV 0.9 D-22-3 N-Channel Enhancement Mode Field Effect Transistor PE616BA PDFN 3x3P Halogen-Free & Lead-Free NIKO-SEM Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = 24V, VGS = 0V 1 VDS = 20V, VGS = 0V, TJ = 55 °C 10 Drain-Source On-State Resistance1 RDS(ON) VGS = 4.5V, ID = 12A 7 9.5 mΩ VGS = 10V, ID = 12A 5.4 7 Forward Transconductance1 gfs VDS = 5V, ID = 12A 55 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = 15V, f = 1MHz 835 pF Output Capacitance Coss 158 Reverse Transfer Capacitance Crss 96 Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 2.4 Ω Total Gate Charge2 Qg VGS = 10V VDS = 15V , ID = 12A 17.7 nC VGS = 4.5V 9.5 Gate-Source Charge2 Qgs 2.3 Gate-Drain Charge2 Qgd 5.1 Turn-On Delay Time2 td(on) VDS = 15V , ID  12A, VGS = 10V, RGEN =6Ω nS Rise Time2 tr 23 Turn-Off Delay Time2 td(off) 51 Fall Time2 tf 24 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current IS 14 A Forward Voltage1 VSD IF = 12A, VGS = 0V 1.2 V Reverse Recovery Time trr IF = 12A, dlF/dt = 100A / S 13.3 nS Reverse Recovery Charge Qrr 5.2 nC 1Pulse test : Pulse Width  300 sec, Duty Cycle  2％. 2Independent of operating temperature.

REV 0.9 D-22-3 N-Channel Enhancement Mode Field Effect Transistor PE616BA PDFN 3x3P Halogen-Free & Lead-Free NIKO-SEM 0 1 2 3 4 Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) TJ , Junction Temperature(˚C) Capacitance Characteristic VDS, Drain-To-Source Voltage(V) Gate charge Characteristics Characteristics Qg , Total Gate Charge(nC) VGS , Gate-To-Source Voltage(V) Source-Drain Diode Forward Voltage VSD, Source-To-Drain Voltage(V) IS , Source Current(A) On-Resistance VS Temperature Normalized Drain to Source ON-Resistance C , Capacitance(pF) 25℃ 125℃ -20℃ CISS COSS CRSS 100 200 300 400 500 600 700 800 900 1000 0 5 10 15 20 25 30 0 4 8 12 16 20 VDS=15V ID=12A 0 1 2 3 4 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=4.5V VGS=3.5V VGS=3V VGS=2.5V 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=12A 25℃ 150℃ 0.1 100

REV 0.9 D-22-3 N-Channel Enhancement Mode Field Effect Transistor PE616BA PDFN 3x3P Halogen-Free & Lead-Free NIKO-SEM Safe Operating Area Single Pulse Maximum Power Dissipation Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) T1 , Square Wave Pulse Duration[sec] 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 75˚C/W TA=25˚C DC 100ms 10ms 1ms 0.01 0.1 100 1000 0.1 1 10 100 NOTE : 1.VGS= 10V 2.TA=25˚C 3.RθJA = 75˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 75 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA