PE614DX NIKOSEM | Alldatasheet
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REV1.1 E-26-2 Dual N-Channel Enhancement Mode Field Effect Transistor PE614DX PDFN 3x3P Halogen-Free & Lead-Free NIKO-SEM D1 D1 D2 D2 S1 G1 S2 G2#1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Gate-Source Voltage VGS ±10 V Continuous Drain Curren3 TC = 25 °C ID A TC = 100 °C 19 TA = 25 °C 11 TA = 70 °C 9 Pulsed Drain Current1 IDM 80 Avalanche Current IAS 22 Avalanche Energy L = 0.1mH EAS 24 mJ Power Dissipation TC = 25 °C PD 17.8 W TC = 100 °C 7 TA = 25 °C 2.5 TA = 70 °C 1.6 ESD Class HBM 2kV Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C THERMAL RESISTANCE RATING THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient2 RJA 50 °C / W Junction-to-Case RJC 7 1Pulse width limited by maximum junction temperature. 2 The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25° C. 3Package limitation current is 7A. PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20V 12.5mΩ 30A G : GATE D : DRAIN S : SOURCE
REV1.1 E-26-2 Dual N-Channel Enhancement Mode Field Effect Transistor PE614DX PDFN 3x3P Halogen-Free & Lead-Free NIKO-SEM ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 20 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 0.35 0.67 1 Gate-Body Leakage IGSS VDS = 0V, VGS = ±8V 30 A Zero Gate Voltage Drain Current IDSS VDS = 16V, VGS = 0V 1 VDS = 10V, VGS = 0V, TJ = 125 °C 10 Drain-Source On-State Resistance1 RDS(ON) VGS = 4.5V, ID = 3A 8.5 10 12.5 mΩ VGS = 3.9V, ID = 3A 8.7 10.2 13.7 VGS = 2.5V, ID = 3A 10 11.5 15 VGS = 1.8V, ID = 3A 12.7 14.2 20.2 Forward Transconductance1 gfs VDS = 5V, ID = 3A 35 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = 10V, f = 1MHz 1105 pF Output Capacitance Coss 198 Reverse Transfer Capacitance Crss 169 Total Gate Charge2 Qg(VGS=4.5V) VDS =10V,ID = 3A nC Qg(VGS=3.9V) 15 Gate-Source Charge2 Qgs 1.4 Gate-Drain Charge2 Qgd 5 Turn-On Delay Time2 td(on) VDD = 10V, ID 3A, VGS = 4.5V, RGEN = 6Ω nS Rise Time2 tr 34 Turn-Off Delay Time2 td(off) 51 Fall Time2 tf 17 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) Continuous Current3 IS 14.8 A Forward Voltage1 VSD IF = 3A, VGS = 0V 1.2 V Reverse Recovery Time trr IF = 3A, dlF/dt = 100A / S VGS = 0V 14 nS Reverse Recovery Charge Qrr 5.4 nC 1Pulse test : Pulse Width 300 sec, Duty Cycle 2％. 2Independent of operating temperature. 3Package limitation current is 7A.
REV1.1 E-26-2 Dual N-Channel Enhancement Mode Field Effect Transistor PE614DX PDFN 3x3P Halogen-Free & Lead-Free NIKO-SEM 25℃ 150℃ 0.1 100 Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) TJ , Junction Temperature(˚C) Capacitance Characteristic VDS, Drain-To-Source Voltage(V) Gate charge Characteristics Characteristics Qg , Total Gate Charge(nC) VGS , Gate-To-Source Voltage(V) Source-Drain Diode Forward Voltage VSD, Source-To-Drain Voltage(V) IS , Source Current(A) On-Resistance VS Temperature Drain to Source ON-Resistance(mΩ) C , Capacitance(pF) CISS COSS CRSS 200 400 600 800 1000 1200 1400 0 5 10 15 20 25 30 0.9 1.8 2.7 3.6 4.5 0 3 6 9 12 15 18 VDS=10V ID=3A 0 1 2 3 4 VGS=5V VGS=4.5V VGS=3.5V VGS=2.5V VGS=2V VGS=1.8V VGS=1.4V VGS=1.5V VGS=1.6V VGS=1.7V 0 1 2 3 4 25℃ 125℃ -20℃ -50 0 50 100 150
REV1.1 E-26-2 Dual N-Channel Enhancement Mode Field Effect Transistor PE614DX PDFN 3x3P Halogen-Free & Lead-Free NIKO-SEM 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 50 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA single pulse Safe Operating Area Single Pulse Maximum Power Dissipation Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration[sec] ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 50 ˚C/W TA = 25˚C DC 100ms 10ms 1ms 0.1 100 0.1 1 10 100 NOTE : 1.VGS = 4.5V 2.TA = 25˚C 3.RθJA = 50 ˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON)