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Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 5

Technical content

Features

  • Pb−Free, Halogen Free and RoHS compliant.
  • Low RDS(on) to Minimize Conduction Losses.
  • Ohmic Region Good RDS(on) Ratio.
  • Optimized Gate Charge to Minimize Switching Losses.
  • Products Integrated Schottky Diode.

Applications

  • Protection Circuits Applications.
  • Computer for DC to DC Converters Applications. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage V DS 30 V Gate-Source Voltage V GS ±20 V Continuous Drain Current3 TC = 25 °C ID A TC = 100 °C 39 TA = 25 °C 24 TA = 70 °C 19 Pulsed Drain Current1 I DM 100 Avalanche Current I AS 34 Avalanche Energy L = 0.1mH E AS 57.8 mJ Power Dissipation4 TC = 25 °C PD W TC = 100 °C 8 TA = 25 °C 3 TA = 70 °C 2 Operating Junction & Storage Temperature Range T j, Tstg -55 to 150 °C G : GATE D : DRAIN S : SOURCE

REV1.2 F-36-3 N-Channel Enhancement Mode Field Effect Transistor PE610SA PDFN 3x3P Halogen-Free & Lead-Free NIKO-SEM THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient2 t≦10s RJA 40 °C / WSteady-State RJA 60 Junction-to-Case Steady-State RJC 6 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. 3Package limitation current is 21A 4The Power dissipation is based on RJA t ≦10s value. ELECTRICAL CHARACTERISTICS (T J = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITMIN TYP MAX STATIC Drain-Source Breakdown Voltage V (BR)DSS V GS = 0V, ID = 1mA 30 V Gate Threshold Voltage V GS(th) VDS = VGS, ID = 250A 1.3 1.6 2.3 Gate-Body Leakage I GSS V DS = 0V, VGS = ±20V ±100 nA Zero Gate Voltage Drain Current I DSS VDS = 24V, VGS = 0V 0.5 mA VDS = 20V, VGS = 0V, TJ = 55 °C 5 Drain-Source On-State Resistance1 RDS(ON) VGS = 4.5V, ID = 16A 3.1 4 mΩ VGS = 10V, ID = 20A 2.4 3 Forward Transconductance1 g fs V DS = 5V, ID = 20A 60 S DYNAMIC Input Capacitance C iss VGS = 0V, VDS = 15V, f = 1MHz 2100 pFOutput Capacitance C oss 407 Reverse Transfer Capacitance C rss 250 Gate Resistance R g V GS = 0V, VDS = 0V, f = 1MHz 1.4 Ω Total Gate Charge2 Q g(VGS=10V) VDS = 15V , ID = 20A nC Qg(VGS=4.5V) 22 Gate-Source Charge2 Q gs 5.3 Gate-Drain Charge2 Q gd 14

REV1.2 F-36-3 N-Channel Enhancement Mode Field Effect Transistor PE610SA PDFN 3x3P Halogen-Free & Lead-Free NIKO-SEM Turn-On Delay Time2 t d(on) VDD = 15V ID  20A, VGEN = 10V, RG =6Ω nS Rise Time2 t r 22 Turn-Off Delay Time2 t d(off) 53 Fall Time2 t f 21 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current I S 20 A Forward Voltage1 V SD I F = 20A, VGS = 0V 1 V Reverse Recovery Time t rr IF = 20A , dlF/dt = 100A / S 16 nS Reverse Recovery Charge Q rr 5 nC 1Pulse test : Pulse Width  300 sec, Duty Cycle  2％. 2Independent of operating temperature.

REV1.2 F-36-3 N-Channel Enhancement Mode Field Effect Transistor PE610SA PDFN 3x3P Halogen-Free & Lead-Free NIKO-SEM CRSS 500 1000 1500 2000 2500 0 5 10 15 20 25 30 012345 On-Resistance VS Gate-To-Source RDS(ON)ON-Resistance(OHM) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) ID , Drain-To-Source Current(A)VGS, Gate-To-Source Voltage(V) Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) Capacitance Characteristic C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) Gate charge Characteristics VGS , Gate-To-Source Voltage(V) Qg , Total Gate Charge(nC) 25℃ 125℃ -20℃ CISS COSS 0 1 02 03 04 0VDS=15V ID=20A 012345 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V VGS=4V VGS=3.5V VGS=3V 0.002 0.004 0.006 0.008 0.01 0 6 12 18 24 30 VGS=10V VGS=4.5V 0.002 0.004 0.006 0.008 0.01 2468 1 0 ID=20A

REV1.2 F-36-3 N-Channel Enhancement Mode Field Effect Transistor PE610SA PDFN 3x3P Halogen-Free & Lead-Free NIKO-SEM On-Resistance VS Temperature Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Source-Drain Diode Forward Voltage IS , Source Current(A) Safe Operating Area Single Pulse Maximum Power Dissipation ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration[sec] VSD, Source-To-Drain Voltage(V) 25℃150℃ 0.1 100 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=20A DC 100ms 10ms 1ms 0.01 0.1 100 1000 0.1 1 10 100 NOTE : 1.VGS= 10V 2.TA=25˚C 3.RθJA = 60˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 60˚C/W TA=25˚C single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 60 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA