PE609CA NIKOSEM | Alldatasheet

Document overview

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  • PDF pages: 7

Technical content

Features

  • Pb−Free, Halogen Free and RoHS compliant.
  • Low RDS(on) to Minimize Conduction Losses.
  • Ohmic Region Good RDS(on) Ratio.
  • Optimized Gate Charge to Minimize Switching Losses.

Applications

  • Protection Circuits Applications.
  • Logic/Load Switch Circuits Applications.
  • DC Motor for BLDC Applications. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL N-Channel P-Channel UNITS Drain-Source Voltage VDS 40 -40 V Gate-Source Voltage VGS ±20 ±20 V Continuous Drain Current4 TC = 25 °C ID 18 -12 A TC = 100 °C 11 -7.4 Pulsed Drain Current1 IDM 53 -44 Avalanche Current IAS 14 -21 Avalanche Energy L = 0.1mH EAS 10 22 mJ Power Dissipation TC = 25 °C PD 15 16 W TC = 100 °C 6.2 6.4 Power Dissipation3 TA = 25 °C 2.7 2.7 TA = 70 °C 1.7 1.7 Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C PRODUCT SUMMARY V(BR)DSS RDS(ON) ID N-Channel 40V 25mΩ 18A P-Channel -40V 60mΩ -12A G. GATE D. DRAIN S. SOURCE

REV 1.0 H-42-4 N- & P-Channel Enhancement Mode Field Effect Transistor PE609CA PDFN 3x3P Halogen-Free & Lead-Free NIKO-SEM THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient2 t ≦10s RJA N-ch 45 °C / W P-ch 45 Junction-to-Ambient2 Steady-State N-ch 87 P-ch 84 Junction-to-Case Steady-State RJC N-ch 8 P-ch 7.8 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. 3The Power dissipation is based on RJA t ≦10s value. 4Package limitation current is N-Ch=9A, P-Ch=-9A. ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A N-Ch P-Ch -40 V VGS = 0V, ID = -250A Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A N-Ch P-Ch 1.3 -1.3 1.7 -1.9 2.3 -2.3 VDS = VGS, ID = -250A Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V N-Ch P-Ch ±100 ±100 nA VDS = 0V, VGS = ±20V Zero Gate Voltage Drain Current IDSS VDS = 32V, VGS = 0V N-Ch P-Ch 1 VDS = -32V, VGS = 0V VDS = 30V, VGS = 0V, TJ = 55 °C N-Ch P-Ch 10 -10 VDS = -30V, VGS = 0V, TJ = 55 °C Drain-Source On-State Resistance1 RDS(ON) VGS = 4.5V, ID = 6A N-Ch P-Ch 22 mΩ VGS = -4.5V, ID = -4A VGS = 10V, ID = 6A N-Ch P-Ch 18

60 VGS = -10V, ID = -4A

Forward Transconductance1 gfs VDS = 10V, ID = 6A N-Ch P-Ch 30 10 S VDS = -10V, ID = -4A

REV 1.0 H-42-4 N- & P-Channel Enhancement Mode Field Effect Transistor PE609CA PDFN 3x3P Halogen-Free & Lead-Free NIKO-SEM DYNAMIC Input Capacitance Ciss N-Channel VGS = 0V, VDS = 20V, f = 1MHz P-Channel VGS = 0V, VDS = -20V, f = 1MHz N-Ch P-Ch 453 549 pF Output Capacitance Coss N-Ch P-Ch 123 Reverse Transfer Capacitance Crss N-Ch P-Ch 41 Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz N-Ch P-Ch 4.4 Ω Total Gate Charge2 Qg N-Channel VDS = 20V , VGS = 10V, ID = 6A P-Channel VDS = -20V , VGS = -10V, ID = -4A N-Ch P-Ch 11.7 nC Gate-Source Charge2 Qgs N-Ch P-Ch 1.2 1.5 Gate-Drain Charge2 Qgd N-Ch P-Ch 2.7 3.3 Turn-On Delay Time2 td(on) N-Channel VDS = 20V, ID  6A, VGS = 10V, RGEN = 6Ω P-Channel VDS = -20V, ID  -4A, VGS = -10V, RGEN = 6Ω N-Ch P-Ch 9.9 11.4 nS Rise Time2 tr N-Ch P-Ch 21.5 Turn-Off Delay Time2 td(off) N-Ch P-Ch Fall Time2 tf N-Ch P-Ch SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current3 IS N-Ch P-Ch 12.5 -13 A Forward Voltage1 VSD IF = 6A, VGS = 0V N-Ch P-Ch 1.2 -1.2 V IF = -4A, VGS = 0V Reverse Recovery Time trr IF = 6A, dlF/dt = 100A / S IF = -4A, dlF/dt = 100A / S N-Ch P-Ch 7.9 13.5 nS Reverse Recovery Charge Qrr N-Ch P-Ch 1.7 3.1 nC 1Pulse test : Pulse Width  300 sec, Duty Cycle  2%. 2Independent of operating temperature. 3Package limitation current is N-Ch=9A, P-Ch=-9A.

REV 1.0 H-42-4 N- & P-Channel Enhancement Mode Field Effect Transistor PE609CA PDFN 3x3P Halogen-Free & Lead-Free NIKO-SEM Output Characteristics Transfer Characteristics VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) Capacitance Characteristic C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) Gate charge Characteristics Characteristics VGS , Gate-To-Source Voltage(V) Qg , Total Gate Charge(nC) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) ID , Drain-To-Source Current(A) On-Resistance VS Gate-To-Source Voltage RDS(ON)ON-Resistance(OHM) VGS, Gate-To-Source Voltage(V) 0 1 2 3 4 5 6 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V VGS=3V VGS=2.8V VGS=3.8V 25℃ 125℃ -20℃ 0 1 2 3 4 5 0.02 0.04 0.06 0.08 0 6 12 18 24 30 VGS=10V VGS=4.5V 0.02 0.04 0.06 0.08 0.1 2 4 6 8 10 ID=6A CISS COSS CRSS 100 200 300 400 500 600 0 5 10 15 20 25 30 0 2 4 6 8 10 VDS=20V ID=6A TYPICAL PERFORMANCE CHARACTERISTICS N-CHANNEL ID, Drain-To-Source Current(A) ID, Drain-To-Source Current(A)

REV 1.0 H-42-4 N- & P-Channel Enhancement Mode Field Effect Transistor PE609CA PDFN 3x3P Halogen-Free & Lead-Free NIKO-SEM Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Source-Drain Diode Forward Voltage IS , Source Current(A) Safe Operating Area Single Pulse Maximum Power Dissipation Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance VSD, Source-To-Drain Voltage(V) On-Resistance VS Temperature 25℃ 150℃ 0.1 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=6A DC 100ms 10ms 1ms 0.01 0.1 100 0.1 1 10 100 NOTE : 1.VGS = 10V 2.TA =25˚C 3.RθJA = 87 ˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 87 ˚C/W TA = 25˚C single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 87 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA ID , Drain Current(A) Power(W) T1 , Square Wave Pulse Duration(sec)

REV 1.0 H-42-4 N- & P-Channel Enhancement Mode Field Effect Transistor PE609CA PDFN 3x3P Halogen-Free & Lead-Free NIKO-SEM Output Characteristics Transfer Characteristics -ID, Drain-To-Source Current(A) -VGS, Gate-To-Source Voltage(V) -VDS, Drain-To-Source Voltage(V) Capacitance Characteristic -VDS, Drain-To-Source Voltage(V) Gate charge Characteristics Characteristics Qg , Total Gate Charge(nC) On-Resistance VS Drain Current -ID , Drain-To-Source Current(A) On-Resistance VS Gate-To-Source Voltage CVoltage -VGS, Gate-To-Source Voltage(V) 25℃ 125℃ -20℃ 0 1 2 3 4 5 6 0 1 2 3 4 5 6 VGS=-10V VGS=-9V VGS=-8V VGS=-7V VGS=-6V VGS=-5V VGS=-4.5V VGS=-3.7V VGS=-3.2V 0.03 0.06 0.09 0.12 0 6 12 18 24 30 VGS=-10V VGS=-4.5V 0.02 0.04 0.06 0.08 0.1 2 4 6 8 10 ID=-4A CISS COSS CRSS 100 200 300 400 500 600 700 0 5 10 15 20 25 30 0 3 6 9 12 VDS=-20V ID=-4A P-CHANNEL -ID, Drain-To-Source Current(A) C , Capacitance(pF) -VGS , Gate-To-Source Voltage(V) RDS(ON)ON-Resistance(OHM) RDS(ON)ON-Resistance(OHM)

REV 1.0 H-42-4 N- & P-Channel Enhancement Mode Field Effect Transistor PE609CA PDFN 3x3P Halogen-Free & Lead-Free NIKO-SEM Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Source-Drain Diode Forward Voltage Safe Operating Area Single Pulse Maximum Power Dissipation Single Pulse Time(s) -VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration(sec) -VSD, Source-To-Drain Voltage(V) On-Resistance VS Temperature 25℃ 125℃ 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 VGS=-10V ID=-4A 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 84 ˚C/W TA = 25˚C DC 100ms 10ms 1ms 0.01 0.1 100 0.1 1 10 100 NOTE : 1.VGS = -10V 2.TA =25˚C 3.RθJA = 84 ˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 84 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA -IS , Source Current(A) -ID , Drain Current(A) Power(W)