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REV 1.2 E-29-1 N-Channel Enhancement Mode Field Effect Transistor PE606BA PDFN 3x3P Halogen-Free & Lead-Free NIKO-SEM PRODUCT SUMMARY V(BR)DSS R DS(ON) I D 30V 18mΩ 23A G D S GSSS#1 DDDD ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage V DS 30 V Gate-Source Voltage V GS ±20 V Continuous Drain Current3 TC = 25 °C ID A TC = 100 °C 15 Continuous Drain Current3 TA = 25 °C 10.6 TA = 70 °C 8.5 Pulsed Drain Current1 I DM 60 Avalanche Current I AS 12.6 Avalanche Energy L = 0.1mH E AS 7.9 mJ Power Dissipation TC = 25 °C PD W TC = 100 °C 7 Power Dissipation4 TA = 25 °C 3.5 TA = 70 °C 2.2 Operating Junction & Storage Temperature Range T j, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient2 t ≦10s RJA 35 °C / WJunction-to-Ambient2 Steady-State RJA 70 Junction-to-Case Steady-State RJC 7 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. 3Package limitation current is 11A 4The Power dissipation is based on RJA t ≦10s value. G : GATE D : DRAIN S : SOURCE
REV 1.2 E-29-1 N-Channel Enhancement Mode Field Effect Transistor PE606BA PDFN 3x3P Halogen-Free & Lead-Free NIKO-SEM ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITMIN TYP MAX STATIC Drain-Source Breakdown Voltage V (BR)DSS VGS = 0V, ID = 250A 30 V Gate Threshold Voltage V GS(th) VDS = VGS, ID = 250A 1.3 1.75 2.3 Gate-Body Leakage I GSS V DS = 0V, VGS = ±20V ±100 nA Zero Gate Voltage Drain Current I DSS VDS = 24V, VGS = 0V 1 VDS = 20V, VGS = 0V, TJ = 55 °C 10 Drain-Source On-State Resistance1 RDS(ON) VGS = 4.5V, ID = 6A 19 27 mΩ VGS = 10V, ID = 7A 13 18 Forward Transconductance1 g fs V DS = 10V, ID = 7A 25 S DYNAMIC Input Capacitance C iss VGS = 0V, VDS = 15V, f = 1MHz 333 pFOutput Capacitance C oss 64 Reverse Transfer Capacitance C rss 43 Gate Resistance R g V GS = 0V, VDS = 0V, f = 1MHz 2 Ω Total Gate Charge2 Q g(VGS=10V) VDS = 15V , ID = 7A 7.5 nCQg(VGS=4.5V) 4.3 Gate-Source Charge2 Q gs 1.1 Gate-Drain Charge2 Q gd 2.3 Turn-On Delay Time2 t d(on) VDD = 15V ID 7A, VGEN = 10V, RG =6Ω nS Rise Time2 t r 17 Turn-Off Delay Time2 t d(off) 37 Fall Time2 t f 18 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current3 I S 15 A Forward Voltage1 V SD I F = 7A, VGS = 0V 1.1 V Reverse Recovery Time t rr IF = 7A , dlF/dt = 100A / S 8.4 nS Reverse Recovery Charge Q rr 2.2 nC 1Pulse test : Pulse Width 300 sec, Duty Cycle 2％. 2Independent of operating temperature. 3Package limitation current is 11A
REV 1.2 E-29-1 N-Channel Enhancement Mode Field Effect Transistor PE606BA PDFN 3x3P Halogen-Free & Lead-Free NIKO-SEM 02468 VDS=15V ID=7A CISS COSS CRSS 100 150 200 250 300 350 400 0 5 10 15 20 25 30 Qg , Total Gate Charge(nC) Source-Drain Diode Forward Voltage VSD, Source-To-Drain Voltage(V) On-Resistance VS Temperature 25℃ 125℃ -20℃ 012345 0123456 VGS=3.5V VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V VGS=2.5V VGS=3V 25℃150℃ 0.1 100 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=7A VDS, Drain-To-Source Voltage(V) Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Capacitance Characteristic C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) Gate charge Characteristics VGS , Gate-To-Source Voltage(V) IS , Source Current(A)
REV 1.2 E-29-1 N-Channel Enhancement Mode Field Effect Transistor PE606BA PDFN 3x3P Halogen-Free & Lead-Free NIKO-SEM 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 70 ˚C/W TA=25˚C Safe Operating Area Single Pulse Maximum Power Dissipation VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 70 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA ID , Drain Current(A) Power(W) Single Pulse Time(s) T1 , Square Wave Pulse Duration[sec] DC 100ms 10ms 1ms 0.01 0.1 100 0.1 1 10 100 NOTE : 1.VGS= 10V 2.TA=25˚C 3.RθJA = 70˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON)