PE600BA NIKOSEM | Alldatasheet

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REV 1.3 F-02-2 N-Channel Enhancement Mode Field Effect Transistor PE600BA PDFN 3x3P Halogen-Free & Lead-Free NIKO-SEM PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 30V 9.8mΩ 32A G D S GSSS#1 D D D D ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current3 TC = 25 °C ID A TC = 100 °C 20 Continuous Drain Current TA = 25 °C 14 TA = 70 °C 11 Pulsed Drain Current1 IDM 90 Avalanche Current IAS 18.5 Avalanche Energy L = 0.1mH EAS 17 mJ Power Dissipation TC = 25 °C PD 17.8 W TC = 100 °C 7 Power Dissipation4 TA = 25 °C 3.5 TA = 70 °C 2.3 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient2 t ≦10s RJA 35 °C / W Junction-to-Ambient2 Steady-State RJA 75 Junction-to-Case Steady-State RJC 7 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. 3Package limitation current is 16A 4The Power dissipation is based on RJA t ≦10s value. G : GATE D : DRAIN S : SOURCE

REV 1.3 F-02-2 N-Channel Enhancement Mode Field Effect Transistor PE600BA PDFN 3x3P Halogen-Free & Lead-Free NIKO-SEM ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 30 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 1.3 1.75 2.3 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = 24V, VGS = 0V 1 VDS = 20V, VGS = 0V, TJ = 55 °C 10 Drain-Source On-State Resistance1 RDS(ON) VGS = 4.5V, ID = 9A 10.2 14 mΩ VGS = 10V, ID = 9A 7.8 9.8 Forward Transconductance1 gfs VDS = 10V, ID = 9A 35 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = 15V, f = 1MHz 620 pF Output Capacitance Coss 108 Reverse Transfer Capacitance Crss 77 Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 2.5 Ω Total Gate Charge2 Qg(VGS=10V) VDS = 15V , ID = 9A nC Qg(VGS=4.5V) 8 Gate-Source Charge2 Qgs 2 Gate-Drain Charge2 Qgd 3.8 Turn-On Delay Time2 td(on) VDD = 15V ID  9A, VGEN = 10V, RG =6Ω nS Rise Time2 tr 37 Turn-Off Delay Time2 td(off) 48 Fall Time2 tf 25 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current3 IS 16 A Forward Voltage1 VSD IF = 9A, VGS = 0V 1.1 V Reverse Recovery Time trr IF = 9A , dlF/dt = 100A / S 12 nS Reverse Recovery Charge Qrr 3 nC 1Pulse test : Pulse Width  300 sec, Duty Cycle  2％. 2Independent of operating temperature. 3Package limitation current is 16A

REV 1.3 F-02-2 N-Channel Enhancement Mode Field Effect Transistor PE600BA PDFN 3x3P Halogen-Free & Lead-Free NIKO-SEM Qg , Total Gate Charge(nC) Source-Drain Diode Forward Voltage VSD, Source-To-Drain Voltage(V) On-Resistance VS Temperature VDS, Drain-To-Source Voltage(V) Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Capacitance Characteristic C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) Gate charge Characteristics Characteristics VGS , Gate-To-Source Voltage(V) IS , Source Current(A) CISS COSS CRSS 100 200 300 400 500 600 700 800 0 5 10 15 20 25 30 0 3 6 9 12 15 VDS=15V ID=9A 0 1 2 3 4 5 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=9A 0 1 2 3 4 5 VGS=10V VGS=7V VGS=6V VGS=5V VGS=4.5V VGS=4V VGS=3.5V VGS=3V 25℃ 150℃ 0.1 100 25℃ 125℃ -20℃

REV 1.3 F-02-2 N-Channel Enhancement Mode Field Effect Transistor PE600BA PDFN 3x3P Halogen-Free & Lead-Free NIKO-SEM Safe Operating Area Single Pulse Maximum Power Dissipation Transient Thermal Response Curve ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration[sec] 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 75˚C/W TA=25˚C single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 75 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA DC 100ms 10ms 1ms 0.01 0.1 100 1000 0.1 1 10 100 NOTE : 1.VGS= 10V 2.TA=25˚C 3.RθJA = 75˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON)