PE5T2DX NIKOSEM | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

Features

  • Pb−Free, Halogen Free and RoHS compliant.
  • Low RDS(on) to Minimize Conduction Losses.
  • Ohmic Region Good RDS(on) Ratio.
  • Optimized Gate Charge to Minimize Switching Losses.

Applications

  • Protection Circuits Applications.
  • Protable Devices for Battery PACK Applications. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current3 TC = 25 °C ID A TC = 100 °C 14 TA = 25 °C 7.5 TA = 70 °C 6 Pulsed Drain Current1 IDM 25 Avalanche Current IAS 15.3 Avalanche Energy L = 0.1mH EAS 11.7 mJ Power Dissipation TC = 25 °C PD W TC = 100 °C 6.6 TA = 25 °C 1.7 TA = 70 °C 1.1 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient2 RJA 70 °C / W Junction-to-Case RJC 7.5 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. 3The maximum current rating is package limited. G : GATE D : DRAIN S : SOURCE

REV1.0 J-2-2 Dual N-Channel Enhancement Mode Field Effect Transistor PE5T2DX PDFN 3x3P Halogen-Free & Lead-Free NIKO-SEM ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 30 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 1 1.5 2.5 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = 24V, VGS = 0V 1 VDS = 20V, VGS = 0V, TJ = 55 °C 10 On-State Drain Current1 ID(ON) VDS = 5V, VGS = 10V 25 A Drain-Source On-State Resistance1 RDS(ON) VGS = 4.5V, ID = 6.8A 19.8 25 mΩ VGS = 10V, ID = 7.5A 16.8 19 Forward Transconductance1 gfs VDS = 5V, ID = 7.5A 35 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = 15V, f = 1MHz 547 pF Output Capacitance Coss 90 Reverse Transfer Capacitance Crss 65 Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 2.2 Ω Total Gate Charge2 Qg(VGS=10V) VDS = 15V , ID = 7.5A 11.4 nC Qg(VGS=4.5V) 6.2 Gate-Source Charge2 Qgs 1.5 Gate-Drain Charge2 Qgd 3 Turn-On Delay Time2 td(on) VDD = 15V ID  7.5A, VGEN = 10V, RG =6Ω nS Rise Time2 tr 49 Turn-Off Delay Time2 td(off) 21 Fall Time2 tf 45 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current3 IS 16 A Forward Voltage1 VSD IF = 7.5A, VGS = 0V 1 V Reverse Recovery Time trr IF = 7.5A , dlF/dt = 100A / S 12 nS Reverse Recovery Charge Qrr 3 nC 1Pulse test : Pulse Width  300 sec, Duty Cycle  2％. 2Independent of operating temperature. 3The maximum current rating is package limited.

REV1.0 J-2-2 Dual N-Channel Enhancement Mode Field Effect Transistor PE5T2DX PDFN 3x3P Halogen-Free & Lead-Free NIKO-SEM Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Capacitance Characteristic C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) Gate charge Characteristics Characteristics Qg , Total Gate Charge(nC) VGS , Gate-To-Source Voltage(V) Source-Drain Diode Forward Voltage VSD, Source-To-Drain Voltage(V) IS , Source Current(A) On-Resistance VS Temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=7.5A 25℃ 150℃ 0.1 100 CISS COSS CRSS 100 200 300 400 500 600 700 0 5 10 15 20 25 30 25℃ 125℃ -20℃ 0 1 2 3 4 5 0 1 2 3 4 5 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V VGS=2.7V VGS=3V VGS=3.2V 0 3 6 9 12 VDS=15V ID=7.5A

REV1.0 J-2-2 Dual N-Channel Enhancement Mode Field Effect Transistor PE5T2DX PDFN 3x3P Halogen-Free & Lead-Free NIKO-SEM Safe Operating Area Single Pulse Maximum Power Dissipation ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve T1 , Square Wave Pulse Duration[sec] DC 100ms 10ms 1ms 0.01 0.1 100 0.1 1 10 100 NOTE : 1.VGS = 10V 2.TA =25˚C 3.RθJA = 70 ˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 70 ˚C/W TA = 25˚C single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 70 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA r(t) , Normalized Effective Transient Thermal Resistance