PE5Q8JZ NIKOSEM | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 5
Technical content
Features
- Pb−Free, Halogen Free and RoHS compliant.
- Low RDS(on) to Minimize Conduction Losses.
- Ohmic Region Good RDS(on) Ratio.
- Optimized Gate Charge to Minimize Switching Losses.
- Products Integrated ESD diode
Applications
- Protection Circuits Applications.
- Protable Devices for Battery PACK Applications. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 12 V Gate-Source Voltage VGS ±12 V Continuous Drain Current2 TC = 25 °C ID A TC = 100 °C 35 TA = 25 °C 17 TA = 70 °C 13 Pulsed Drain Current1 IDM 80 Avalanche Current IAS 33 Avalanche Energy L = 0.1mH EAS 54 mJ Power Dissipation TC = 25 °C PD W TC = 100 °C 11 TA = 25 °C 2.5 TA = 70 °C 1.6 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient3 RJA 50 °C／W Junction-to-case RJC 4.5 1Pulse width limited by maximum junction temperature. 2Package limitation current is 20A. 3The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. G : GATE D : DRAIN S : SOURCE
REV1.0 I-45-1 Dual N-Channel Enhancement Mode Field Effect Transistor PE5Q8JZ PDFN 3x3S Halogen-Free & Lead-Free NIKO-SEM ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 12 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 0.6 0.9 1.2 Gate-Body Leakage IGSS VDS = 0V, VGS = ±10V ±10 uA Zero Gate Voltage Drain Current IDSS VDS = 10V, VGS = 0V 1 uA VDS = 10V, VGS = 0V, TJ = 125 °C 10 Drain-Source On-State Resistance1 RDS(ON) VGS = 4.5V, ID = 3A 3.4 4.5 mΩ VGS = 3.8V, ID = 3A 3.6 5.1 VGS = 3.1V, ID = 3A 4.1 5.8 VGS = 2.5V, ID = 3A 4.9 7 Forward Transconductance1 gfs VDS = 5V, ID = 3A 42.5 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = 6V, f = 1MHz 1782 pF Output Capacitance Coss 555 Reverse Transfer Capacitance Crss 379 Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 2 Ω Total Gate Charge2 Qg(VGS=4.5V) VDS = 6V, ID = 3A nC Qg(VGS=3.8V) 15 Gate-Source Charge2 Qgs 2.5 Gate-Drain Charge2 Qgd 4.1 Turn-On Delay Time2 td(on) VDD = 6V ID 3A, VGEN = 4.5V, RG = 6Ω nS Rise Time2 tr 90 Turn-Off Delay Time2 td(off) 63 Fall Time2 tf 47 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current3 IS 23 A Forward Voltage1 VSD IF = 3A, VGS = 0V 1.2 V Reverse Recovery Time trr IF = 3A , dlF/dt = 100A / S 47 nS Reverse Recovery Charge Qrr 22 nC 1Pulse test : Pulse Width 300 sec, Duty Cycle 2％. 2Independent of operating temperature. 3Package limitation current is 20A.
REV1.0 I-45-1 Dual N-Channel Enhancement Mode Field Effect Transistor PE5Q8JZ PDFN 3x3S Halogen-Free & Lead-Free NIKO-SEM Output Characteristics Transfer Characteristics ID, Drain-To-Source Current(A) VGS , Gate-To-Source Voltage(V) C , Capacitance(pF) ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) Gate charge Characteristics Characteristics Capacitance Characteristic VDS, Drain-To-Source Voltage(V) Qg , Total Gate Charge(nC) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) ID , Drain-To-Source Current(A) On-Resistance VS Gate-To-Source Voltage RDS(ON)ON-Resistance(OHM) VGS, Gate-To-Source Voltage(V) CRSS 500 1000 1500 2000 2500 0 3 6 9 12 COSS CISS 0 0.6 1.2 1.8 2.4 3 VGS=4.5V VGS=3.8V VGS=3.1V VGS=2.5V VGS=1.5V VGS=1.7V VGS=1.6V 0.002 0.004 0.006 0.008 0.01 0 6 12 18 24 30 VGS=4.5V VGS=3.8V 0.002 0.004 0.006 0.008 0.01 0 1 2 3 4 5 ID=3A 0 0.6 1.2 1.8 2.4 3 125℃ 25℃ -20℃ 0.9 1.8 2.7 3.6 4.5 0 3 6 9 12 15 18 VDS=6V ID=3A
REV1.0 I-45-1 Dual N-Channel Enhancement Mode Field Effect Transistor PE5Q8JZ PDFN 3x3S Halogen-Free & Lead-Free NIKO-SEM Source-Drain Diode Forward Voltage IS , Source Current(A) Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Safe Operating Area Single Pulse Maximum Power Dissipation ID , Drain Current(A) Power(W) VDS, Drain-To-Source Voltage(V) Single Pulse Time(s) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance VSD, Source-To-Drain Voltage(V) On-Resistance VS Temperature 0.0 0.5 1.0 1.5 2.0 2.5 -50 -25 0 25 50 75 100 125 150 VGS=4.5V ID=3A 0.1 100 125℃ 25℃ T1 , Square Wave Pulse Duration[sec] single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 50 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 50 ˚C/W TA = 25˚C DC 100ms 10ms 1ms 0.1 100 0.1 1 10 100 NOTE : 1.VGS = 4.5V 2.TA =25˚C 3.RθJA = 50 ˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON)
REV1.0 I-45-1 Dual N-Channel Enhancement Mode Field Effect Transistor PE5Q8JZ PDFN 3x3S Halogen-Free & Lead-Free NIKO-SEM Safe Operating Area Single Pulse Maximum Power Dissipation ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration[sec] single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJC = 4.5 ℃/W 3.TJ-TC = P*RthJC(t) 4.RthJC(t) = r(t)*RthJC 120 180 240 300 0.001 0.01 0.1 1 10 100 Single Pulse RθJC = 4.5 ˚C/W TC = 25˚C DC 100ms 10ms 1ms 100 0.1 1 10 100 NOTE : 1.VGS = 4.5V 2.TC =25˚C 3.RθJC = 4.5 ˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON)