PE5G5EA NIKOSEM | Alldatasheet

Document overview

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Technical content

Features

  • Pb−Free, Halogen Free and RoHS compliant.
  • Low RDS(on) to Minimize Conduction Losses.
  • Ohmic Region Good RDS(on) Ratio.
  • Optimized Gate Charge to Minimize Switching Losses.
  • Products Integrated ESD diode with ESD Protected.

Applications

  • Protection Circuits Applications.
  • Logic/Load Switch Circuits Applications. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±25 V Continuous Drain Current TC = 25 °C ID -31 A TC = 100 °C -20 TA = 25 °C -8.6 TA = 70 °C -6.9 Pulsed Drain Current1 IDM -56 Avalanche Current IAS -27 Avalanche Energy L = 0.1mH EAS 36 mJ Power Dissipation3 TC = 25 °C PD W TC = 100 °C 11 TA = 25 °C 2.1 TA = 70 °C 1.3 Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -30V 16mΩ -31A G. GATE D. DRAIN S. SOURCE

P-Channel Logic Level Enhancement Mode Field Effect Transistor REV 0.8 L-17-4 PE5G5EA PDFN 3x3P Halogen-free & Lead-Free NIKO-SEM THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient2 t ≦10s RJA 60 °C / W Junction-to-Ambient2 Steady-State RJA 87 Junction-to-Case Steady-State RJC 4.5 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. 3The Power dissipation is based on RJA t ≦10s value. ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250A -30 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250A -1.3 -1.8 -2.3 Gate-Body Leakage IGSS VDS = 0V, VGS = ±16V ±30 uA Zero Gate Voltage Drain Current IDSS VDS = -30V, VGS = 0V -1 VDS = -30V, VGS = 0V, TJ = 55 °C -10 Drain-Source On-State Resistance1 RDS(ON) VGS = -10V, ID = -12A 12 16 mΩ VGS = -4.5V, ID = -12A 19 30 Forward Transconductance1 gfs VDS = -5V, ID = -12A 31 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = -15V, f = 1MHz 1139 pF Output Capacitance Coss 188 Reverse Transfer Capacitance Crss 151 Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 8.7 Ω Total Gate Charge2 Qg(VGS=-10V) VDS = -15V , ID = -12A nC Qg(VGS=-4.5V) 13 Gate-Source Charge2 Qgs 2.6 Gate-Drain Charge2 Qgd 6.4

P-Channel Logic Level Enhancement Mode Field Effect Transistor REV 0.8 L-17-4 PE5G5EA PDFN 3x3P Halogen-free & Lead-Free NIKO-SEM Turn-On Delay Time2 td(on) VDD = -15V ID  -12A, VGS = -10V, RGEN = 6Ω 9.3 nS Rise Time2 tr 59 Turn-Off Delay Time2 td(off) 64 Fall Time2 tf 90 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current IS -22 A Forward Voltage1 VSD IF = -12A, VGS = 0V -1.3 V Reverse Recovery Time trr IF = -12A, dI/dt = 100A/μs 8.3 nS Reverse Recovery Charge Qrr 2.2 nC 1Pulse test : Pulse Width  300 sec, Duty Cycle  2％. 2Independent of operating temperature.