DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 5
Technical content
Features
- Pb−Free, Halogen Free and RoHS compliant.
- Low R DS(on) to Minimize Conduction Losses.
- Ohmic Region Good RDS(on) Ratio.
- Optimized Gate Charge to Minimize Switching Losses.
Applications
- Protection Circuits Applications.
- Logic/Load Switch Circuits Applications. ABSOLUTE MAXIMUM RATINGS (T A = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage V DS 30 V Gate-Source Voltage V GS ±25 V Continuous Drain Current3 TC = 25 °C ID A TC = 100 °C 19 Pulsed Drain Current1 I DM 90 Continuous Drain Current TA = 25 °C ID TA = 70 °C 8 Avalanche Current I AS 22 Avalanche Energy L = 0.1mH E AS 24 mJ Power Dissipation TC = 25 °C PD W TC = 100 °C 7 Power Dissipation TA = 25 °C PD 1.7 W TA = 70 °C 1.1 Operating Junction & Storage Temperature Range T j, Tstg -55 to 150 °C PRODUCT SUMMARY V (BR)DSS R DS(ON) I D 30V 9.5mΩ 31A G. GATE D. DRAIN S. SOURCE
REV 1.0 F-34-2 N-Channel Enhancement Mode Field Effect Transistor PE5E4BA PDFN 3x3P Halogen-Free & Lead-Free NIKO-SEM THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient2 Steady-State RJA 70 °C / W Junction-to-Case Steady-State RJC 7 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. 3Package limitation current is 27A. ELECTRICAL CHARACTERISTICS (T J = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITMIN TYP MAX STATIC Drain-Source Breakdown Voltage V (BR)DSS VGS = 0V, ID = 250A 30 V Gate Threshold Voltage V GS(th) VDS = VGS, ID = 250A 1.3 2 2.3 Gate-Body Leakage I GSS V DS = 0V, VGS = ±25V ±100 nA Zero Gate Voltage Drain Current I DSS VDS = 24V, VGS = 0V 1 VDS = 20V, VGS = 0V, TJ = 55 °C 10 Drain-Source On-State Resistance1 RDS(ON) VGS = 4.5V, ID = 8.8A 14.3 17 mΩ VGS = 10V, ID = 10A 7.5 9.5 Forward Transconductance1 g fs V DS = 5V, ID = 10A 28 S DYNAMIC Input Capacitance C iss VGS = 0V, VDS = 15V, f = 1MHz 530 pFOutput Capacitance C oss 160 Reverse Transfer Capacitance C rss 90 Gate Resistance R g V GS = 0V, VDS = 0V, f = 1MHz 2.7 Ω Total Gate Charge2 Q g VGS = 10V VDS = 15V , VGS = 10V, ID = 10A nC VGS = 4.5V 6.7 Gate-Source Charge2 Q gs 1.5 Gate-Drain Charge2 Q gd 4.3 Turn-On Delay Time2 t d(on) VDS = 15V , ID 10A, VGS = 10V, RGEN =6Ω nS Rise Time2 t r 16 Turn-Off Delay Time2 t d(off) 35 Fall Time2 t f 17
REV 1.0 F-34-2 N-Channel Enhancement Mode Field Effect Transistor PE5E4BA PDFN 3x3P Halogen-Free & Lead-Free NIKO-SEM SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current I S 15 A Forward Voltage1 V SD I F = 10A, VGS = 0V 1.2 V Reverse Recovery Time t rr IF = 10A, dlF/dt = 100A / S 15 nS Reverse Recovery Charge Q rr 5 nC 1Pulse test : Pulse Width 300 sec, Duty Cycle 2％. 2Independent of operating temperature.
REV 1.0 F-34-2 N-Channel Enhancement Mode Field Effect Transistor PE5E4BA PDFN 3x3P Halogen-Free & Lead-Free NIKO-SEM CISS COSS CRSS 100 200 300 400 500 600 700 0 5 10 15 20 25 30 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=10A 25℃ 125℃ -20℃ 012345 0123456 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V VGS=3.5V VGS=3.3V 0.01 0.02 0.03 0.04 0.05 02468 1 0 VGS=10V VGS=4.5V 0.02 0.04 0.06 0.08 0.1 2468 1 0 ID=10A Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Capacitance Characteristic C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) On-Resistance VS Temperature On-Resistance VS Gate-To-Source RDS(ON)ON-Resistance(OHM) VGS, Gate-To-Source Voltage(V) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) ID , Drain-To-Source Current(A)
REV 1.0 F-34-2 N-Channel Enhancement Mode Field Effect Transistor PE5E4BA PDFN 3x3P Halogen-Free & Lead-Free NIKO-SEM single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 70 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA DC 100ms 10ms 1ms 0.01 0.1 100 0.1 1 10 100 NOTE : 1.VGS= 10V 2.TA=25˚C 3.RθJA = 70˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 70˚C/W TA=25˚C 25℃ 150℃ 0.1 100 0369 1 2 1 5 VDS=15V ID=10A Gate charge Characteristics Qg , Total Gate Charge(nC) VGS , Gate-To-Source Voltage(V) Source-Drain Diode Forward Voltage VSD, Source-To-Drain Voltage(V) IS , Source Current(A) Safe Operating Area Single Pulse Maximum Power Dissipation ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration[sec]