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Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 5

Technical content

Features

  • Patent Pending.
  • Pb−Free, Halogen Free and RoHS compliant.
  • Low R DS(on) to Minimize Conduction Losses.
  • Ohmic Region Good RDS(on) Ratio.
  • Optimized Gate Charge to Minimize Switching Losses.
  • Products Integrated ESD diode with ESD Protected up to 2KV.

Applications

  • Protection Circuits Applications.
  • Protable Devices for Battery PACK Applications. ABSOLUTE MAXIMUM RATINGS (T A = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage V DS 24 V Gate-Source Voltage V GS ±12 V Continuous Drain Current2 TC = 25 °C ID A TC = 100 °C 34 TA = 25 °C 16 TA = 70 °C 13 Pulsed Drain Current1 I DM 90 Avalanche Current I AS 28 Avalanche Energy L = 0.1mH E AS 39 mJ Power Dissipation TC = 25 °C PD W TC = 100 °C 11 TA = 25 °C 2.5 TA = 70 °C 1.6 Operating Junction & Storage Temperature Range T j, Tstg -55 to 150 °C G : GATE D : DRAIN S : SOURCE

REV 1.1 F-17-2 Dual N-Channel Enhancement Mode Field Effect Transistor PE5C6JZ PDFN 3x3S Halogen-Free & Lead-Free NIKO-SEM THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient3 RJA 50 °C／W Junction-to-case RJC 4.5 1Pulse width limited by maximum junction temperature. 2Package limitation current is 13A. 3The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. ELECTRICAL CHARACTERISTICS (T J = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITMIN TYP MAX STATIC Drain-Source Breakdown Voltage V (BR)DSS VGS = 0V, ID = 250A 24 V Gate Threshold Voltage V GS(th) VDS = VGS, ID = 250A 0.6 0.9 1.2 Gate-Body Leakage I GSS V DS = 0V, VGS = ±10V ±10 uA Zero Gate Voltage Drain Current I DSS VDS = 20V, VGS = 0V 1 VDS = 20V, VGS = 0V, TJ = 125 °C 10 Drain-Source On-State Resistance1 RDS(ON) VGS = 4.5V, ID = 3A 3.6 4.6 5.5 mΩ VGS = 3.8V, ID = 3A 3.9 4.9 6 VGS = 3.1V, ID = 3A 4.3 5.3 6.9 VGS = 2.5V, ID = 3A 5 6 8.5 Forward Transconductance1 g fs V DS = 5V, ID = 3A 24 S DYNAMIC Input Capacitance C iss VGS = 0V, VDS = 12V, f = 1MHz 1774 pFOutput Capacitance C oss 327 Reverse Transfer Capacitance C rss 267 Gate Resistance R g V GS = 0V, VDS = 0V, f = 1MHz 1.8 Ω Total Gate Charge2 Qg(VGS=4.5V) VDS = 12V, ID = 3A nC Qg(VGS=3.9V) 21.4 Gate-Source Charge2 Q gs 2.2 Gate-Drain Charge2 Q gd 9 Turn-On Delay Time2 t d(on) VDD = 12V ID  3A, VGEN = 4.5V, RG = 6Ω nS Rise Time2 t r 38 Turn-Off Delay Time2 t d(off) 70 Fall Time2 t f 18

REV 1.1 F-17-2 Dual N-Channel Enhancement Mode Field Effect Transistor PE5C6JZ PDFN 3x3S Halogen-Free & Lead-Free NIKO-SEM SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current3 I S 22 A Forward Voltage1 V SD I F = 3A, VGS = 0V 1.2 V Reverse Recovery Time t rr IF = 3A , dlF/dt = 100A / S 28 nS Reverse Recovery Charge Q rr 13 nC 1Pulse test : Pulse Width  300 sec, Duty Cycle  2％. 2Independent of operating temperature. 3Package limitation current is 13A.

REV 1.1 F-17-2 Dual N-Channel Enhancement Mode Field Effect Transistor PE5C6JZ PDFN 3x3S Halogen-Free & Lead-Free NIKO-SEM CISS COSS CRSS 500 1000 1500 2000 2500 0 5 10 15 20 25 30 0.004 0.008 0.012 0.016 0.02 012345 ID=3A 0.002 0.004 0.006 0.008 0.01 0369 1 2 1 5 VGS=3.8V VGS=3.1V VGS=2.5V VGS=4.5V 25℃ 125℃ -20℃ 0 0.6 1.2 1.8 2.4 3 0 0.6 1.2 1.8 2.4 3 VGS=4.5V VGS=3.8V VGS=3.1V VGS=2.5V VGS=1.6V VGS=1.7V VGS=1.5V Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Capacitance Characteristic C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) On-Resistance VS Temperature On-Resistance VS Gate-To-Source RDS(ON)ON-Resistance(OHM) VGS, Gate-To-Source Voltage(V) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) ID , Drain-To-Source Current(A) -50 0 50 100 150

REV 1.1 F-17-2 Dual N-Channel Enhancement Mode Field Effect Transistor PE5C6JZ PDFN 3x3S Halogen-Free & Lead-Free NIKO-SEM DC 100ms 10ms 1ms 0.1 100 1000 0.1 1 10 100 NOTE : 1.VGS= 10V 2.TA=25˚C 3.RθJA = 50˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 50 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 50˚C/W TA=25˚C 25℃150℃ 0.1 100 0 1 02 03 04 05 0VDS=12V ID=3A Gate charge Characteristics Qg , Total Gate Charge(nC) VGS , Gate-To-Source Voltage(V) Source-Drain Diode Forward Voltage VSD, Source-To-Drain Voltage(V) IS , Source Current(A) Safe Operating Area Single Pulse Maximum Power Dissipation ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration[sec]