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Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 5
Technical content
Features
- Pb−Free, Halogen Free and RoHS compliant.
- Low R DS(on) to Minimize Conduction Losses.
- Ohmic Region Good RDS(on) Ratio.
- Optimized Gate Charge to Minimize Switching Losses.
Applications
- Protection Circuits Applications.
- Logic/Load Switch Circuits Applications. ABSOLUTE MAXIMUM RATINGS (T A = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage V DS -20 V Gate-Source Voltage V GS ±12 V Continuous Drain Current4 TC = 25 °C ID -49 A TC = 100 °C -31 TA = 25 °C -14.4 TA = 70 °C -11.5 Pulsed Drain Current1 I DM -75 Avalanche Current I AS -39 Avalanche Energy L = 0.1mH E AS 76 mJ Power Dissipation3 TC = 25 °C PD W TC = 100 °C 16 TA = 25 °C 3.5 TA = 70 °C 2.2 Junction & Storage Temperature Range T j, Tstg -55 to 150 °C PRODUCT SUMMARY V (BR)DSS R DS(ON) I D -20V 10mΩ -49A G. GATE D. DRAIN S. SOURCE
P-Channel Logic Level Enhancement Mode Field Effect Transistor REV 1.0 H-11-5 PE5B7BA PDFN 3x3P Halogen-free & Lead-Free NIKO-SEM THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient2 t ≦10s RJA 35 °C / W Junction-to-Ambient2 Steady-State RJA 55 Junction-to-Case Steady-State RJC 3 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. 3The Power dissipation is based on RJA t ≦10s value. 4Package limitation current is -33A. ELECTRICAL CHARACTERISTICS (T J = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V (BR)DSS VGS = 0V, ID = -250A -20 V Gate Threshold Voltage V GS(th) VDS = VGS, ID = -250A -0.6 -0.8 -1.2 Gate-Body Leakage I GSS V DS = 0V, VGS = ±12V ±100 nA Zero Gate Voltage Drain Current I DSS VDS = -16V, VGS = 0V -1 VDS = -10V, VGS = 0V, TJ = 55 °C -10 Drain-Source On-State Resistance1 RDS(ON) VGS = -4.5V, ID = -12A 6.6 10 mΩVGS = -2.5V, ID = -12A 9.4 13 Forward Transconductance1 g fs V DS = -5V, ID = -12A 60 S DYNAMIC Input Capacitance C iss VGS = 0V, VDS = -10V, f = 1MHz 3107 pFOutput Capacitance C oss 422 Reverse Transfer Capacitance C rss 360 Gate Resistance R g V GS = 0V, VDS = 0V, f = 1MHz 3.2 Ω Total Gate Charge2 Qg(VGS=-4.5V) VDS = -10V , ID = -12A nC Qg(VGS=-2.5V) 22 Gate-Source Charge2 Q gs 4.3 Gate-Drain Charge2 Q gd 11
P-Channel Logic Level Enhancement Mode Field Effect Transistor REV 1.0 H-11-5 PE5B7BA PDFN 3x3P Halogen-free & Lead-Free NIKO-SEM Turn-On Delay Time2 t d(on) VDD = -10V ID -12A, VGS = -4.5V, RGEN = 6Ω nS Rise Time2 t r 145 Turn-Off Delay Time2 t d(off) 122 Fall Time2 t f 163 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current3 I S -34 A Forward Voltage1 V SD I F = -12A, VGS = 0V -1.2 V Reverse Recovery Time t rr IF=-12A, dI/dt=100A/μs 40 nS Reverse Recovery Charge Q rr 24 nC 1Pulse test : Pulse Width 300 sec, Duty Cycle 2％. 2Independent of operating temperature. 3Package limitation current is -33A.
P-Channel Logic Level Enhancement Mode Field Effect Transistor REV 1.0 H-11-5 PE5B7BA PDFN 3x3P Halogen-free & Lead-Free NIKO-SEM 0 8 16 24 32 40 VDS=-10V ID=-12A CISS COSS CRSS 500 1000 1500 2000 2500 3000 3500 4000 0 5 10 15 20 25 30 0123456 VGS=-4.5V VGS=-4V VGS=-2.7V VGS=-2.5V VGS=-1.7V VGS=-1.5V VGS=-1.6V 25℃ 125℃ -20℃ 01234 Output Characteristics -ID, Drain-To-Source Current(A) Transfer Characteristics -VGS, Gate-To-Source Voltage(V) -VDS, Drain-To-Source Voltage(V) Capacitance Characteristic C , Capacitance(pF) -VDS, Drain-To-Source Voltage(V) Gate charge Characteristics -VGS , Gate-To-Source Voltage(V) Qg , Total Gate Charge(nC) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) -ID , Drain-To-Source Current(A) On-Resistance VS Gate-To-Source RDS(ON)ON-Resistance(OHM) -VGS, Gate-To-Source Voltage(V) 0.004 0.008 0.012 0.016 0.02 0 6 12 18 24 30 VGS=-4.5V VGS=-2.5V 0.01 0.02 0.03 0.04 0.05 ID=-12A -ID, Drain-To-Source Current(A)
P-Channel Logic Level Enhancement Mode Field Effect Transistor REV 1.0 H-11-5 PE5B7BA PDFN 3x3P Halogen-free & Lead-Free NIKO-SEM 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 55˚C/W TA=25˚C 25℃125℃ 100 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 VGS=-4.5V ID=-12A Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Source-Drain Diode Forward Voltage -IS , Source Current(A) Safe Operating Area Single Pulse Maximum Power Dissipation -ID , Drain Current(A) Power(W) Single Pulse Time(s) -VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration[sec] -VSD, Source-To-Drain Voltage(V) On-Resistance VS Temperature DC 100ms 10ms 1ms 0.1 100 0.1 1 10 100 NOTE : 1.VGS= 10V 2.TC=25˚C 3.RθJC = 55˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 55 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA