PE5B1DZ NIKOSEM | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

Features

  • Patent Pending.
  • Pb−Free, Halogen Free and RoHS compliant.
  • Low RDS(on) to Minimize Conduction Losses.
  • Ohmic Region Good RDS(on) Ratio.

Applications

  • Protection Circuits Applications.
  • Protable Devices for Battery PACK Applications. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±25 V Continuous Drain Current2 TC = 25 °C ID -37 A TC = 100 °C -23.5 TA = 25 °C -9 TA = 70 °C -7.1 Pulsed Drain Current1 IDM -100 Avalanche Current IAS -25.8 Avalanche Energy L = 0.1mH EAS 33 mJ Power Dissipation TC = 25 °C PD W TC = 100 °C 14 TA = 25 °C 15 TA = 70 °C 1.4 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient3 RJA 56 °C／W Junction-to-case RJC 3.25 1Pulse width limited by maximum junction temperature. 2Package limitation current is -16A. 3The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. G : GATE D : DRAIN S : SOURCE

REV1.0 I-35-2 Dual P-Channel Enhancement Mode Field Effect Transistor PE5B1DZ PDFN 3x3S Halogen-Free & Lead-Free NIKO-SEM ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250A -30 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250A -1 -1.7 -3 Gate-Body Leakage IGSS VDS = 0V, VGS = ±25V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = -24V, VGS = 0V -1 uA VDS = -20V, VGS = 0V, TJ = 125 °C -10 Drain-Source On-State Resistance1 RDS(ON) VGS = -10V, ID = -12A 12.5 16 mΩ VGS = -4.5V, ID = -12A 19.3 30 Forward Transconductance1 gfs VDS = -5V, ID = -12A 30 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = -15V, f = 1MHz 1233 pF Output Capacitance Coss 198 Reverse Transfer Capacitance Crss 174 Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 5.8 Ω Total Gate Charge2 Qg(VGS=-10V) VDS = -15V, ID = -12A nC Qg(VGS=-4.5V) 15 Gate-Source Charge2 Qgs 2.6 Gate-Drain Charge2 Qgd 7.6 Turn-On Delay Time2 td(on) VDD = -15V ID  -12A, VGEN = -10V, RG = 6Ω nS Rise Time2 tr 69 Turn-Off Delay Time2 td(off) 76 Fall Time2 tf 95 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current3 IS -29 A Forward Voltage1 VSD IF = -12A, VGS = 0V -1.3 V Reverse Recovery Time trr IF = -12A , dlF/dt = 100A / S 26 nS Reverse Recovery Charge Qrr 10 nC 1Pulse test : Pulse Width  300 sec, Duty Cycle  2％. 2Independent of operating temperature. 3Package limitation current is -16A.

REV1.0 I-35-2 Dual P-Channel Enhancement Mode Field Effect Transistor PE5B1DZ PDFN 3x3S Halogen-Free & Lead-Free NIKO-SEM Output Characteristics -ID, Drain-To-Source Current(A) Transfer Characteristics -ID, Drain-To-Source Current(A) -VGS, Gate-To-Source Voltage(V) -VDS, Drain-To-Source Voltage(V) Capacitance Characteristic C , Capacitance(pF) -VDS, Drain-To-Source Voltage(V) Gate charge Characteristics Characteristics -VGS , Gate-To-Source Voltage(V) Qg , Total Gate Charge(nC) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) -ID , Drain-To-Source Current(A) On-Resistance VS Gate-To-Source Voltage RDS(ON)ON-Resistance(OHM) -VGS, Gate-To-Source Voltage(V) 0 1 2 3 4 5 VGS=-10V VGS=-9V VGS=-8V VGS=-7V VGS=-6V VGS=-5V VGS=-4.5V VGS=-2.9V VGS=-2.5V VGS=-2.3V VGS=-2.7V 0.006 0.012 0.018 0.024 0.03 0 3 6 9 12 15 VGS=-10V VGS=-4.5V 25℃ 125℃ -20℃ 0 1 2 3 4 5 CISS COSS CRSS 200 400 600 800 1000 1200 1400 1600 0 5 10 15 20 25 30 0 6 12 18 24 30 VDS=-15V ID=-12A 0.01 0.02 0.03 0.04 0.05 2 4 6 8 10 ID=-12A

REV1.0 I-35-2 Dual P-Channel Enhancement Mode Field Effect Transistor PE5B1DZ PDFN 3x3S Halogen-Free & Lead-Free NIKO-SEM Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Source-Drain Diode Forward Voltage -IS , Source Current(A) Safe Operating Area Single Pulse Maximum Power Dissipation -ID , Drain Current(A) Power(W) Single Pulse Time(s) -VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration(s) -VSD, Source-To-Drain Voltage(V) On-Resistance VS Temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 VGS=-10V ID=-12A 25℃ 125℃ 100 single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 56 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA DC 100ms 10ms 1ms 0.01 0.1 100 1000 0.1 1 10 100 NOTE : 1.VGS = -10V 2.TA =25˚C 3.RθJA = 56 ˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 56 ˚C/W TA = 25˚C