DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

REV 1.0 F-43-3 N-Channel Enhancement Mode Field Effect Transistor PE552BA PDFN 3x3P Halogen-Free & Lead-Free NIKO-SEM PRODUCT SUMMARY V(BR)DSS R DS(ON) I D 20V 5mΩ 47A G D S GSSS#1 DDDD ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage V DS 20 V Gate-Source Voltage V GS ±8 V Continuous Drain Current3 TC = 25 °C ID A TC = 100 °C 30 TA = 25 °C 15 TA = 70 °C 12 Pulsed Drain Current1 I DM 70 Avalanche Current I AS 38.6 Avalanche Energy L = 0.1mH E AS 74.6 mJ Power Dissipation TC = 25 °C PD W TC = 100 °C 7 TA = 25 °C 2 TA = 70 °C 1.3 Operating Junction & Storage Temperature Range T j, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient2 RJA 60 °C / W Junction-to-Case RJC 6.5 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. 3Package limitation current is 22A ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITMIN TYP MAX STATIC Drain-Source Breakdown Voltage V (BR)DSS VGS = 0V, ID = 250A 20 V Gate Threshold Voltage V GS(th) VDS = VGS, ID = 250A 0.4 0.7 0.9 G : GATE D : DRAIN S : SOURCE

REV 1.0 F-43-3 N-Channel Enhancement Mode Field Effect Transistor PE552BA PDFN 3x3P Halogen-Free & Lead-Free NIKO-SEM Gate-Body Leakage I GSS V DS = 0V, VGS = ±8V ±100 nA Zero Gate Voltage Drain Current I DSS VDS = 16V, VGS = 0V 1 VDS = 10V, VGS = 0V, TJ = 55 °C 10 Drain-Source On-State Resistance1 RDS(ON) VGS = 4.5V, ID = 5A 4.1 5 mΩVGS = 2.5V, ID = 5A 4.7 5.7 VGS = 1.8V, ID = 5A 6 8.2 Forward Transconductance1 g fs V DS = 5V, ID = 5A 70 S DYNAMIC Input Capacitance C iss VGS = 0V, VDS = 10V, f = 1MHz 4407 pFOutput Capacitance C oss 469 Reverse Transfer Capacitance C rss 381 Gate Resistance R g V GS = 0V, VDS = 0V, f = 1MHz 0.7 Ω Total Gate Charge2 Q g VGS=4.5V , VDS = 10V , ID = 5A nCGate-Source Charge2 Q gs 6 Gate-Drain Charge2 Q gd 13 Turn-On Delay Time2 t d(on) VDD = 4.5V ID  5A, VGEN = 10V, RG =6Ω nS Rise Time2 t r 25 Turn-Off Delay Time2 t d(off) 180 Fall Time2 t f 85 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current3 I S 14 A Forward Voltage1 V SD I F = 5A, VGS = 0V 1.3 V Reverse Recovery Time t rr IF = 5A , dlF/dt = 100A / S 24 nS Reverse Recovery Charge Q rr 12 nC 1Pulse test : Pulse Width  300 sec, Duty Cycle  2％. 2Independent of operating temperature.

REV 1.0 F-43-3 N-Channel Enhancement Mode Field Effect Transistor PE552BA PDFN 3x3P Halogen-Free & Lead-Free NIKO-SEM Qg , Total Gate Charge(nC) Source-Drain Diode Forward Voltage VSD, Source-To-Drain Voltage(V) On-Resistance VS Temperature VDS, Drain-To-Source Voltage(V) Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Capacitance Characteristic C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) Gate charge Characteristics VGS , Gate-To-Source Voltage(V) IS , Source Current(A) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=5A CISS COSS CRSS 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 0 5 10 15 20 25 30 0 1 02 03 04 05 0 VDS=10V ID=5A 0 0.5 1 1.5 2 25℃150℃ 0.1 100 00 . 511 . 52 VGS=10V VGS=5V VGS=4.5V VGS=3.5V VGS=2V VGS=1.8V VGS=1.2V VGS=1.4V VGS=1.5V VGS=1.6V 25℃ 125℃ ‐20℃

REV 1.0 F-43-3 N-Channel Enhancement Mode Field Effect Transistor PE552BA PDFN 3x3P Halogen-Free & Lead-Free NIKO-SEM Safe Operating Area Single Pulse Maximum Power Dissipation Transient Thermal Response Curve ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration[sec] single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 60 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 60˚C/W TA=25˚C DC 100ms 10ms 1ms 0.01 0.1 100 1000 0.1 1 10 100 NOTE : 1.VGS= 10V 2.TA=25˚C 3.RθJA = 60˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON)