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P-Channel Logic Level Enhancement Mode Field Effect Transistor REV 1.0 E-21-5 PE551BA PDFN 3x3P Halogen-free & Lead-Free NIKO-SEM G S D GSSS#1 DDDD ABSOLUTE MAXIMUM RATINGS (T A = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage V DS -30 V Gate-Source Voltage V GS ±25 V Continuous Drain Current3 TC = 25 °C ID -22 A TC = 100 °C -14 TA = 25 °C -7 TA = 70 °C -5.8 Pulsed Drain Current1 I DM -40 Avalanche Current I AS -23 Avalanche Energy L = 0.1mH E AS 26 mJ Power Dissipation TC = 25 °C PD W TC = 100 °C 7 TA = 25 °C 1.9 TA = 70 °C 1.2 Junction & Storage Temperature Range T j, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient2 R θJA 65 °C / W Junction-to-Case RJC 7.2 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. 3Package limitation current is -21A G : GATE D : DRAIN S : SOURCE PRODUCT SUMMARY V(BR)DSS R DS(ON) I D -30V 20mΩ -22A
P-Channel Logic Level Enhancement Mode Field Effect Transistor REV 1.0 E-21-5 PE551BA PDFN 3x3P Halogen-free & Lead-Free NIKO-SEM ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V (BR)DSS VGS = 0V, ID = -250A -30 V Gate Threshold Voltage V GS(th) VDS = VGS, ID = -250A -1 -1.6 -3 Gate-Body Leakage I GSS V DS = 0V, VGS = ±25V ±100 nA Zero Gate Voltage Drain Current I DSS VDS = -24V, VGS = 0V -1 VDS = -20V, VGS = 0V, TJ = 55 °C -10 Drain-Source On-State Resistance1 RDS(ON) VGS = -10V, ID = -7A 15 20 mΩVGS = -4.5V, ID = -7A 23 30 Forward Transconductance1 g fs V DS = -10V, ID = -7A 25 S DYNAMIC Input Capacitance C iss VGS = 0V, VDS = -15V, f = 1MHz 1009 pFOutput Capacitance C oss 154 Reverse Transfer Capacitance C rss 121 Gate Resistance R g V GS = 0V, VDS = 0V, f = 1MHz 8 Ω Total Gate Charge2 Qg(VGS=-10V) VDS = -15V , ID = -7A nC Qg(VGS=-4.5V) 11 Gate-Source Charge2 Q gs 3 Gate-Drain Charge2 Q gd 6 Turn-On Delay Time2 t d(on) VDD = -15V ID -7A, VGS = -10V, RGEN = 6Ω nS Rise Time2 t r 16 Turn-Off Delay Time2 t d(off) 50 Fall Time2 t f 25 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current I S -13 A Forward Voltage1 V SD I F = -7A, VGS = 0V -1.3 V Reverse Recovery Time t rr IF = -7A , dlF/dt = 100 A / S 11 nS Reverse Recovery Charge Q rr 3 nC 1Pulse test : Pulse Width 300 sec, Duty Cycle 2%. 2Independent of operating temperature.
P-Channel Logic Level Enhancement Mode Field Effect Transistor REV 1.0 E-21-5 PE551BA PDFN 3x3P Halogen-free & Lead-Free NIKO-SEM 012345 Out put Characteristics -ID, Drain-To-Source Current(A) Transfer Characteristics -ID, Drain-To-Source Current(A) -VGS, Gate-To-Source Voltage(V) -VDS, Drain-To-Source Voltage(V) Capacitance Characteristic C , Capacitance(pF) -VDS, Drain-To-Source Voltage(V) Gate charge Characteristics -VGS , Gate-To-Source Voltage(V) Qg , Total Gate Charge(nC) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) -ID , Drain-To-Source Current(A) On-Resistance VS Gate-To-Source RDS(ON)ON-Resistance(OHM) -VGS, Gate-To-Source Voltage(V) 25℃ -20℃ 125℃ 012345 VGS=-10V VGS=‐9V VGS=‐8V VGS=‐7V VGS=‐6V VGS=‐5V VGS=‐4.5V VGS=‐4V VGS=‐3.5V VGS=-3V 0.01 0.02 0.03 0.04 0.05 048 1 2 1 6 2 0 VGS=-10V VGS=-4.5V 0.02 0.04 0.06 0.08 2468 1 0 ID=-7A CISS COSS CRSS 200 400 600 800 1000 1200 1400 0 5 10 15 20 25 30 0 5 10 15 20 25 VDS=-15V ID=-7A
P-Channel Logic Level Enhancement Mode Field Effect Transistor REV 1.0 E-21-5 PE551BA PDFN 3x3P Halogen-free & Lead-Free NIKO-SEM Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Source-Drain Diode Forward Voltage -IS , Source Current(A) Safe Operating Area Single Pulse Maximum Power Dissipation -ID , Drain Current(A) Power(W) Single Pulse Time(s) -VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration[sec] -VSD, Source-To-Drain Voltage(V) On-Resistance VS Temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 VGS=-10V ID=-7A 25℃150℃ 0.1 100 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 65˚C/W TA=25˚C DC 100ms 10ms 1ms 0.01 0.1 100 0.1 1 10 100 NOTE : 1.VGS= -10V 2.TA=25˚C 3.RθJA = 65˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 65 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA