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Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 5

Technical content

Features

  • Pb−Free, Halogen Free and RoHS compliant.
  • Low R DS(on) to Minimize Conduction Losses.
  • Ohmic Region Good RDS(on) Ratio.
  • Optimized Gate Charge to Minimize Switching Losses.
  • Products Integrated ESD diode with ESD Protected up to 2KV.

Applications

  • Protection Circuits Applications.
  • Logic/Load Switch Circuits Applications.
  • Protable Devices for Battery PACK Applications. ABSOLUTE MAXIMUM RATINGS (T A = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage V DS 20 V Gate-Source Voltage V GS ±8 V Continuous Drain Current2 TC = 25 °C ID A TC = 100 °C 24 TA = 25 °C 12 TA = 70 °C 9.7 Pulsed Drain Current1 I DM 60 Avalanche Current I AS 23.5 Avalanche Energy L = 0.1mH E AS 27.6 mJ Power Dissipation TC = 25 °C PD W TC = 100 °C 9.4 TA = 25 °C 2.2 TA = 70 °C 1.4 Operating Junction & Storage Temperature Range T j, Tstg -55 to 150 °C G : GATE D : DRAIN S : SOURCE

REV 1.0 F-11-5 Dual N-Channel Enhancement Mode Field Effect Transistor PE544JZ PDFN 3x3S Halogen-Free & Lead-Free NIKO-SEM THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient3 RJA 55 °C／W Junction-to-case RJC 5.3 1Pulse width limited by maximum junction temperature. 2Package limitation current is 24A. 3The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. ELECTRICAL CHARACTERISTICS (T J = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITMIN TYP MAX STATIC Drain-Source Breakdown Voltage V (BR)DSS VGS = 0V, ID = 250A 20 V Gate Threshold Voltage V GS(th) VDS = VGS, ID = 250A 0.35 0.67 1 Gate-Body Leakage I GSS V DS = 0V, VGS = ±8V ±30 uA Zero Gate Voltage Drain Current I DSS VDS = 16V, VGS = 0V 1 VDS = 10V, VGS = 0V, TJ = 125 °C 10 Drain-Source On-State Resistance1 RDS(ON) VGS = 4.5V, ID = 3A 5.1 6.8 8.5 mΩ VGS = 3.8V, ID = 3A 5.4 7.2 9 VGS = 3.1V, ID = 3A 5.7 7.6 9.5 VGS = 2.5V, ID = 3A 6.3 8.4 10.5 VGS = 1.8V, ID = 3A 7 11 15 Forward Transconductance1 g fs V DS = 5V, ID = 3A 32 S DYNAMIC Input Capacitance C iss VGS = 0V, VDS = 10V, f = 1MHz 1589 pFOutput Capacitance C oss 214 Reverse Transfer Capacitance C rss 165 Gate Resistance R g V GS = 0V, VDS = 0V, f = 1MHz 2.3 Ω Total Gate Charge2 Qg(VGS=4.5V) VDS = 10V, ID = 3A 18.5 nC Qg(VGS=3.8V) 16 Gate-Source Charge2 Q gs 1.7 Gate-Drain Charge2 Q gd 4.5 Turn-On Delay Time2 t d(on) VDD = 10V ID  3A, VGEN = 4.5V, RG = 6Ω nS Rise Time2 t r 42 Turn-Off Delay Time2 t d(off) 60 Fall Time2 t f 25

REV 1.0 F-11-5 Dual N-Channel Enhancement Mode Field Effect Transistor PE544JZ PDFN 3x3S Halogen-Free & Lead-Free NIKO-SEM SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current3 I S 1.8 A Forward Voltage1 V SD I F = 3A, VGS = 0V 1.2 V Reverse Recovery Time t rr IF = 3A , dlF/dt = 100A / S 24 nS Reverse Recovery Charge Q rr 8 nC 1Pulse test : Pulse Width  300 sec, Duty Cycle  2％. 2Independent of operating temperature. 3Package limitation current is 24A.

REV 1.0 F-11-5 Dual N-Channel Enhancement Mode Field Effect Transistor PE544JZ PDFN 3x3S Halogen-Free & Lead-Free NIKO-SEM 0 4 8 12 16 20 VDS=10V ID=3A CISS COSS CRSS 200 400 600 800 1000 1200 1400 1600 1800 2000 0 5 10 15 20 25 25℃ 125℃ -20℃ 012345 0.01 0.02 0.03 0.04 0.05 ID=3A VGS=1.8V 0.006 0.012 0.018 0.024 0.03 0369 1 2 1 5 VGS=4.5V VGS=2.5V VGS=3.8V VGS=3.1V 012345 VGS=4.5V VGS=3.8V VGS=3.1V VGS=2.5V VGS=1.8V VGS=1.3V VGS=1.4V On-Resistance VS Gate-To-Source RDS(ON)ON-Resistance(OHM) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) ID , Drain-To-Source Current(A)VGS, Gate-To-Source Voltage(V) Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) Capacitance Characteristic C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) Gate charge Characteristics VGS , Gate-To-Source Voltage(V) Qg , Total Gate Charge(nC)

REV 1.0 F-11-5 Dual N-Channel Enhancement Mode Field Effect Transistor PE544JZ PDFN 3x3S Halogen-Free & Lead-Free NIKO-SEM DC 100ms 10ms 1ms 0.1 100 0.1 1 10 100 NOTE : 1.VGS= 4.5V 2.TA=25˚C 3.RθJA = 55˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 55˚C/W TA=25˚C 25℃ 150℃ 0.1 100 -50 0 50 100 150 VGS=3.8V,ID=3A VGS=4.5V,ID=3A VGS=3.1V,ID=3A VGS=2.5V,ID=3A single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJCA= 55 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA On-Resistance VS Temperature RDS(ON)ON-Resistance(mOHM) TJ , Junction Temperature(˚C) Source-Drain Diode Forward Voltage IS , Source Current(A) Safe Operating Area Single Pulse Maximum Power Dissipation ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration[sec] VSD, Source-To-Drain Voltage(V)