PE533BA NIKOSEM | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 6
Technical content
Features
- Pb−Free, Halogen Free and RoHS compliant.
- Low RDS(on) to Minimize Conduction Losses.
- Ohmic Region Good RDS(on) Ratio.
- Optimized Gate Charge to Minimize Switching Losses.
Applications
- Protection Circuits Applications.
- Logic/Load Switch Circuits Applications. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS -40 V Gate-Source Voltage VGS ±25 V Continuous Drain Current TC = 25 °C ID -40 A TC = 100 °C -25 TA = 25 °C -11 TA = 70 °C -8.7 Pulsed Drain Current1 IDM -114 Avalanche Current IAS -41 Avalanche Energy L = 0.1mH EAS 84 mJ Power Dissipation3 TC = 25 °C PD W TC = 100 °C 17 TA = 25 °C 3.2 TA = 70 °C 2.1 Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -40V 14mΩ -40A G. GATE D. DRAIN S. SOURCE
P-Channel Logic Level Enhancement Mode Field Effect Transistor REV 1.0 L-49-5 PE533BA PDFN 3x3P Halogen-free & Lead-Free NIKO-SEM THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient2 t ≦10s RJA 40 °C / W Junction-to-Ambient2 Steady-State RJA 62 Junction-to-Case Steady-State RJC 3 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. 3The Power dissipation is based on RJA t ≦10s value. ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250A -40 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250A -1 -1.8 -3 Gate-Body Leakage IGSS VDS = 0V, VGS = ±25V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = -40V, VGS = 0V -1 VDS = -40V, VGS = 0V, TJ = 55 °C -10 Drain-Source On-State Resistance1 RDS(ON) VGS = -10V, ID = -11A 10 14 mΩ VGS = -4.5V, ID = -11A 14 20 Forward Transconductance1 gfs VDS = -5V, ID = -11A 55 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = -20V, f = 1MHz 2504 pF Output Capacitance Coss 317 Reverse Transfer Capacitance Crss 246 Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 4.1 Ω Total Gate Charge2 Qg(VGS=-10V) VDS = -20V , ID = -11A nC Qg(VGS=-4.5V) 27 Gate-Source Charge2 Qgs 6.4 Gate-Drain Charge2 Qgd 12
P-Channel Logic Level Enhancement Mode Field Effect Transistor REV 1.0 L-49-5 PE533BA PDFN 3x3P Halogen-free & Lead-Free NIKO-SEM Turn-On Delay Time2 td(on) VDD = -20V ID -11A, VGS = -10V, RGEN = 6Ω nS Rise Time2 tr 47 Turn-Off Delay Time2 td(off) 92 Fall Time2 tf 89 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current IS -32 A Forward Voltage1 VSD IF = -11A, VGS = 0V -1.3 V Reverse Recovery Time trr IF = -11A, dI/dt = 100A/μs 16 nS Reverse Recovery Charge Qrr 7.8 nC 1Pulse test : Pulse Width 300 sec, Duty Cycle 2％. 2Independent of operating temperature.
P-Channel Logic Level Enhancement Mode Field Effect Transistor REV 1.0 L-49-5 PE533BA PDFN 3x3P Halogen-free & Lead-Free NIKO-SEM Output Characteristics Transfer Characteristics -ID, Drain-To-Source Current(A) -ID, Drain-To-Source Current(A) -VGS, Gate-To-Source Voltage(V) -VDS, Drain-To-Source Voltage(V) On-Resistance VS Drain Current On-Resistance VS Gate-To-Source Voltage RDS(ON)ON-Resistance(OHM) RDS(ON)ON-Resistance(OHM) -ID , Drain-To-Source Current(A) -VGS, Gate-To-Source Voltage(V) Capacitance Characteristic On-Resistance VS Temperature C , Capacitance(pF) Normalized Drain to Source ON-Resistance -VDS, Drain-To-Source Voltage(V) TJ , Junction Temperature(˚C) 0 1 2 3 4 5 6 -20℃ 25℃ 125℃ 0 1 2 3 4 5 6 VGS=-10V VGS=-9V VGS=-8V VGS=-7V VGS=-6V VGS=-5V VGS=-4.5V VGS=-2.7V VGS=-3V 0.01 0.02 0.03 0.04 0.05 0 6 12 18 24 30 VGS=-10V VGS=-4.5V 0.00 0.01 0.02 0.03 0.04 0.05 2 4 6 8 10 ID=-11A 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 VGS=-10V ID=-11A CISS COSS CRSS 500 1000 1500 2000 2500 3000 3500 0 8 16 24 32 40
P-Channel Logic Level Enhancement Mode Field Effect Transistor REV 1.0 L-49-5 PE533BA PDFN 3x3P Halogen-free & Lead-Free NIKO-SEM Source-Drain Diode Forward Voltage Safe Operating Area Single Pulse Maximum Power Dissipation Single Pulse Time(s) -VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration[sec] -VSD, Source-To-Drain Voltage(V) Gate charge Characteristics Characteristics Qg , Total Gate Charge(nC) -VGS , Gate-To-Source Voltage(V) single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 62 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA 0 12 24 36 48 60 VDS=-20V ID=-11A 0.1 100 25℃ 150℃ 100 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 62 ˚C/W TA = 25˚C DC 100ms 10ms 1ms 0.01 0.1 100 0.1 1 10 100 NOTE : 1.VGS = -10V 2.TA =25˚C 3.RθJA = 62 ˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) -IS , Source Current(A) -ID , Drain Current(A) Power(W)
P-Channel Logic Level Enhancement Mode Field Effect Transistor REV 1.0 L-49-5 PE533BA PDFN 3x3P Halogen-free & Lead-Free NIKO-SEM Safe Operating Area Single Pulse Maximum Power Dissipation Single Pulse Time(s) -VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration[sec] 120 180 240 300 0.001 0.01 0.1 1 10 100 Single Pulse RθJC = 3 ˚C/W TC = 25˚C DC 10ms 1ms 100uS 0.1 100 0.1 1 10 100 NOTE : 1.VGS = 10V 2.TC =25˚C 3.RθJC = 3 ˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJC = 3 ℃/W 3.TJ-TC = P*RthJC(t) 4.RthJC(t) = r(t)*RthJC -ID , Drain Current(A) Power(W)