DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
P-Channel Logic Level Enhancement Mode Field Effect Transistor PE521BA P D F N 3 x 3 P Halogen-Free & Lead-Free NIKO-SEM G-02-3 REV 1.0 GSSS#1 DDDD ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage V DS -20 V Gate-Source Voltage V GS ±8 V Continuous Drain Current3 TC = 25 °C ID -23 A TC = 100 °C -18 TA = 25 °C -7 TA = 70 °C -6 Pulsed Drain Current1 I DM -60 Avalanche Current I AS -20 Avalanche Energy L = 0.1mH E AS 20 mJ Power Dissipation TC = 25 °C PD 17.8 W TC = 100 °C 11.4 TA = 25 °C 1.8 TA = 70 °C 1.2 Operating Junction & Storage Temperature Range T j, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient2 RJA 68 °C / W Junction-to-Case RJC 7 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25° C. The value in any given application depends on the user's specific board design. 3Package limitation current is -11A. PRODUCT SUMMARY V(BR)DSS R DS(ON) I D -20V 20mΩ -23A G S D G : GATE D : DRAIN S : SOURCE
P-Channel Logic Level Enhancement Mode Field Effect Transistor PE521BA P D F N 3 x 3 P Halogen-Free & Lead-Free NIKO-SEM G-02-3 REV 1.0 ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V (BR)DSS VGS = 0V, ID = -250A -20 V Gate Threshold Voltage V GS(th) VDS = VGS, ID = -250A -0.3 -0.6 -1 Gate-Body Leakage I GSS V DS = 0V, VGS = ±8V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = -16V, VGS = 0V -1 uAVDS = -10V, VGS = 0V, TJ = 125 °C -10 Drain-Source On-State Resistance1 RDS(ON) VGS = -4.5V, ID = -2.5A 14 20 mΩVGS = -2.5V, ID = -2A 17 25 VGS = -1.8V, ID = -1A 22 35 Forward Transconductance1 g fs V DS = -5V, ID = -2.5A 21 S DYNAMIC Input Capacitance C iss VGS = 0V, VDS = -10V, f = 1MHz 1801 pFOutput Capacitance C oss 179 Reverse Transfer Capacitance C rss 160 Gate Resistance Rg V GS = 0V, VDS = 0V, f = 1MHz 10 Ω Total Gate Charge2 Qg(VGS=-4.5V) VDS =-10V, ID = -2.5A 22.7 nC Qg(VGS=-2.5V) 13.3 Gate-Source Charge2 Q gs 1.9 Gate-Drain Charge2 Q gd 5.4 Turn-On Delay Time2 t d(on) VDS = -10V, ID -2.5A, VGS = -4.5V, RGS = 6Ω nS Rise Time2 t r 34 Turn-Off Delay Time2 t d(off) 216 Fall Time2 t f 165 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current3 I S -16 A Forward Voltage1 V SD I F = -2.5A, VGS = 0V -1.2 V Reverse Recovery Time t rr IF = -2.5A , dlF/dt = 100 A / S 35 nS Reverse Recovery Charge Q rr 18 nC 1Pulse test : Pulse Width 300 sec, Duty Cycle 2％. 2Independent of operating temperature. 3Package limitation current is -11A.
P-Channel Logic Level Enhancement Mode Field Effect Transistor PE521BA P D F N 3 x 3 P Halogen-Free & Lead-Free NIKO-SEM G-02-3 REV 1.0 0.006 0.012 0.018 0.024 0.03 0 8 16 24 32 40 VGS=-4.5V VGS=-2.5V 012345 0.006 0.012 0.018 0.024 0.03 ID=-2.5A Output Characteristics -ID, Drain-To-Source Current(A) Transfer Characteristics -ID, Drain-To-Source Current(A) -VGS, Gate-To-Source Voltage(V) -VDS, Drain-To-Source Voltage(V) Capacitance Characteristic C , Capacitance(pF) -VDS, Drain-To-Source Voltage(V) Gate charge Characteristics -VGS , Gate-To-Source Voltage(V) Qg , Total Gate Charge(nC) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) -ID , Drain-To-Source Current(A) On-Resistance VS Gate-To-Source RDS(ON)ON-Resistance(OHM) -VGS, Gate-To-Source Voltage(V) 25℃ 125℃ -20℃ CISS COSS CRSS0 200 400 600 800 1000 1200 1400 1600 1800 2000 0 5 10 15 20 25 30 0.5 1.5 2.5 3.5 4.5 0 5 10 15 20 25 VDS=-10V ID=-2.5A 012345 VGS=‐6V VGS=‐5V VGS=‐4.5V VGS=‐4V VGS=‐3V VGS=‐2.5V VGS=‐1.5V VGS=‐1.6V VGS=‐1.7V VGS=‐1.8V VGS=‐2V
P-Channel Logic Level Enhancement Mode Field Effect Transistor PE521BA P D F N 3 x 3 P Halogen-Free & Lead-Free NIKO-SEM G-02-3 REV 1.0 Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Source-Drain Diode Forward Voltage -IS , Source Current(A) Safe Operating Area Single Pulse Maximum Power Dissipation -ID , Drain Current(A) Power(W) Single Pulse Time(s) -VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration[sec] -VSD, Source-To-Drain Voltage(V) On-Resistance VS Temperature 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 VGS=-4.5V ID=-2.5A 25℃150℃ 0.1 100 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 68˚C/W TA=25˚C single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 68 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA DC 100ms 10ms 1ms 0.01 0.1 100 0.1 1 10 100 NOTE : 1.VGS= -4.5V 2.TA=25˚C 3.RθJA = 68˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON)