PE507BA NIKOSEM | Alldatasheet
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P-Channel Logic Level Enhancement Mode Field Effect Transistor REV1.1 I-49-3 PE507BA PDFN 3x3P Halogen-free & Lead-Free NIKO-SEM G S D GSSS#1 D D D D ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±25 V Continuous Drain Current3 TC = 25 °C ID -42 A TC = 100 °C -15 TA = 25 °C -10 TA = 70 °C -8 Pulsed Drain Current1 IDM -50 Avalanche Current IAS -42 Avalanche Energy L = 0.1mH EAS 87 mJ Power Dissipation TC = 25 °C PD W TC = 100 °C 15 TA = 25 °C 2 TA = 70 °C 1.3 Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient2 RθJA 60 °C / W Junction-to-Case RJC 3.3 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. 3Package limitation current is 22A G : GATE D : DRAIN S : SOURCE PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -30V 14mΩ -42A
P-Channel Logic Level Enhancement Mode Field Effect Transistor REV1.1 I-49-3 PE507BA PDFN 3x3P Halogen-free & Lead-Free NIKO-SEM ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250A -30 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250A -1 -1.5 -3 Gate-Body Leakage IGSS VDS = 0V, VGS = ±25V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = -24V, VGS = 0V -1 VDS = -20V, VGS = 0V, TJ = 55 °C -10 Drain-Source On-State Resistance1 RDS(ON) VGS = -4.5V, ID = -9A 14.5 22 mΩ VGS = -10V, ID = -10A 9.6 14 Forward Transconductance1 gfs VDS = -10V, ID = -10A 32 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = -15V, f = 1MHz 2100 pF Output Capacitance Coss 365 Reverse Transfer Capacitance Crss 327 Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 3 Ω Total Gate Charge2 Qg VDS = -15V , VGS = -10V, ID = -10A 49.1 nC Gate-Source Charge2 Qgs 6 Gate-Drain Charge2 Qgd 12.3 Turn-On Delay Time2 td(on) VDD = -15V ID -10A, VGS = -10V, RGEN = 6Ω nS Rise Time2 tr 24 Turn-Off Delay Time2 td(off) 85 Fall Time2 tf 50 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current IS -30 A Forward Voltage1 VSD IF = -10A, VGS = 0V -1.2 V Reverse Recovery Time trr IF=-10A, dI/dt=100A/μs 20.5 nS Reverse Recovery Charge Qrr 8.3 uC 1Pulse test : Pulse Width 300 sec, Duty Cycle 2%. 2Independent of operating temperature.
P-Channel Logic Level Enhancement Mode Field Effect Transistor REV1.1 I-49-3 PE507BA PDFN 3x3P Halogen-free & Lead-Free NIKO-SEM 125℃ -20℃ 0 1 2 3 4 5 Output Characteristics -ID, Drain-To-Source Current(A) Transfer Characteristics -ID, Drain-To-Source Current(A) -VGS, Gate-To-Source Voltage(V) -VDS, Drain-To-Source Voltage(V) Capacitance Characteristic C , Capacitance(pF) -VDS, Drain-To-Source Voltage(V) Gate charge Characteristics Characteristics -VGS , Gate-To-Source Voltage(V) Qg , Total Gate Charge(nC) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) -ID , Drain-To-Source Current(A) On-Resistance VS Gate-To-Source Voltage RDS(ON)ON-Resistance(OHM) -VGS, Gate-To-Source Voltage(V) 25℃ 0.005 0.01 0.015 0.02 0.025 0.03 3 4 5 6 7 8 9 10 ID=-10A 0.005 0.01 0.015 0.02 0 10 20 30 40 50 VGS=-10V VGS=-4.5V 0 1 2 3 4 5 VGS=-10V VGS=-7V VGS=-5V VGS=-4.5V VGS=-4V VGS=-3V VGS=-2.5V CISS COSS CRSS 500 1000 1500 2000 2500 0 6 12 18 24 30 0 10 20 30 40 50 VDS=-15V ID=-10A
P-Channel Logic Level Enhancement Mode Field Effect Transistor REV1.1 I-49-3 PE507BA PDFN 3x3P Halogen-free & Lead-Free NIKO-SEM 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 60˚C/W TA=25˚C DC 100ms 10ms 1ms 0.01 0.1 100 0.1 1 10 100 NOTE : 1.VGS= -10V 2.TA=25˚C 3.RθJA =60˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Source-Drain Diode Forward Voltage -IS , Source Current(A) Safe Operating Area Single Pulse Maximum Power Dissipation -ID , Drain Current(A) Power(W) Single Pulse Time(s) -VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration[sec] -VSD, Source-To-Drain Voltage(V) On-Resistance VS Temperature 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 -50 -25 0 25 50 75 100 125 150 VGS=-10V ID=-10A 25℃ 125℃ 0.1 100 single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 60 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA