PD676BA NIKOSEM | Alldatasheet
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REV 1.0 I-16-2 N-Channel Enhancement Mode Field Effect Transistor PD676BA TO-252 Halogen-Free & Lead-Free NIKO-SEM ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 40 V Gate-Source Voltage VGS ±20 V Continuous Drain Current2 TC = 25 °C ID 130 A TC = 100 °C 82 Pulsed Drain Current1 IDM 250 Avalanche Current IAS 67 Avalanche Energy L = 0.1mH EAS 227 mJ Power Dissipation TC = 25 °C PD W TC = 100 °C 33 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 ° C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case RJC 1.5 °C / W Junction-to-Ambient RJA 62.5 1Pulse width limited by maximum junction temperature. 2Package limitation current is 85A. ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITS MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 40 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 1.3 1.7 2.3 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = 32V, VGS = 0V 1 VDS = 30V, VGS = 0V, TJ = 125 °C 10 1. GATE 2. DRAIN 3. SOURCE PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 40V 2.9mΩ 133A G D S
REV 1.0 I-16-2 N-Channel Enhancement Mode Field Effect Transistor PD676BA TO-252 Halogen-Free & Lead-Free NIKO-SEM Drain-Source On-State Resistance1 RDS(ON) VGS = 4.5V, ID = 16A 2.6 3.7 mΩ VGS = 10V, ID = 20A 2.3 2.9 Forward Transconductance1 gfs VDS = 5V, ID = 20A 105 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = 20V, f = 1MHz 6266 pF Output Capacitance Coss 705 Reverse Transfer Capacitance Crss 412 Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 1.5 Ω Total Gate Charge2 Qg(VGS=10V) VDS =20V,ID = 20A 117 nC Qg(VGS=4.5V) 59 Gate-Source Charge2 Qgs 19 Gate-Drain Charge2 Qgd 24 Turn-On Delay Time2 td(on) VDD = 20V, ID 20A, VGS = 10V, RGEN =6Ω nS Rise Time2 tr 100 Turn-Off Delay Time2 td(off) 174 Fall Time2 tf 158 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current IS 64 A Forward Voltage1 VSD IF = 20A, VGS = 0V 1.3 V Reverse Recovery Time trr IF = 20A, dIs/dt= 100A/μs 40 nS Reverse Recovery Charge Qrr 28 nC 1Pulse test : Pulse Width 300 sec, Duty Cycle 2％. 2Independent of operating temperature.
REV 1.0 I-16-2 N-Channel Enhancement Mode Field Effect Transistor PD676BA TO-252 Halogen-Free & Lead-Free NIKO-SEM Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Capacitance Characteristic C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) On-Resistance VS Temperature On-Resistance VS Gate-To-Source Voltage RDS(ON)ON-Resistance(OHM) VGS, Gate-To-Source Voltage(V) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) ID , Drain-To-Source Current(A) 0 1 2 3 4 5 6 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V VGS=2.5V VGS=3V VGS=2.8V 0.002 0.004 0.006 0.008 0.01 2 4 6 8 10 ID=20A 0.002 0.004 0.006 0.008 0.01 0 6 12 18 24 30 VGS=10V VGS=4.5V 0 1 2 3 4 5 -20℃ 125℃ 25℃ 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=20A CISS COSS CRSS 1000 2000 3000 4000 5000 6000 7000 8000 0 5 10 15 20 25 30
REV 1.0 I-16-2 N-Channel Enhancement Mode Field Effect Transistor PD676BA TO-252 Halogen-Free & Lead-Free NIKO-SEM Gate charge Characteristics Characteristics Qg , Total Gate Charge(nC) VGS , Gate-To-Source Voltage(V) Source-Drain Diode Forward Voltage VSD, Source-To-Drain Voltage(V) IS , Source Current(A) Safe Operating Area Single Pulse Maximum Power Dissipation ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration[sec] 0 30 60 90 120 VDS=20V ID=20A 0.1 100 25℃ 150℃ 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJC = 1.5 ℃/W 3.TJ-TC = P*RthJC(t) 4.RthJC(t) = r(t)*RthJC Duty cycle= 0.5 0.2 0.1 0.05 0.02 0.01 single pulse 200 400 600 800 0.001 0.01 0.1 1 10 100 Single Pulse RθJC = 1.5 ˚C/W TC = 25˚C DC 100ms 10ms 1ms 100 1000 0.1 1 10 100 NOTE : 1.VGS = 10V 2.TC =25˚C 3.RθJC = 1.5 ˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON)