PD636BA NIKOSEM | Alldatasheet

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REV 1.0 E-09-2 N-Channel Enhancement Mode Field Effect Transistor PD636BA TO-252 Halogen-Free & Lead-Free NIKO-SEM ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current2 TC = 25 °C ID A TC = 100 °C 30.5 Pulsed Drain Current1 IDM 120 Avalanche Current IAS 20 Avalanche Energy L = 0.1mH EAS 20.8 mJ Power Dissipation TC = 25 °C PD 37.9 W TC = 100 °C 15 Junction & Storage Temperature Range TJ, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case RJC 3.3 °C / W Junction-to-Ambient RJA 62.5 1Pulse width limited by maximum junction temperature. 2Package limitation current is 20A ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 30 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 1.3 1.8 2.3 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = 24V, VGS = 0V 1 A VDS = 20V, VGS = 0V, TJ = 125 °C 10 Drain-Source On-State Resistance1 RDS(ON) VGS = 4.5V, ID = 15A 10 12 mΩ VGS = 10V , ID = 20A 7 9 1. GATE 2. DRAIN 3. SOURCE PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 30V 9mΩ 48A G D S 100% RG Test , 100% UIL Test

REV 1.0 E-09-2 N-Channel Enhancement Mode Field Effect Transistor PD636BA TO-252 Halogen-Free & Lead-Free NIKO-SEM Forward Transconductance1 gfs VDS = 5V, ID = 20A 45 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = 15V, f = 1MHz 765 pF Output Capacitance Coss 143 Reverse Transfer Capacitance Crss 91 Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 3 Ω Total Gate Charge2 Qg VGS=10V VDS = 15V , ID = 20A 16.5 nC VGS=4.5V 8.9 Gate-Source Charge2 Qgs 2.2 Gate-Drain Charge2 Qgd 5 Turn-On Delay Time2 td(on) VDS = 15V ID  20A, VGS = 10V, RGEN =6Ω nS Rise Time2 tr 22 Turn-Off Delay Time2 td(off) 42 Fall Time2 tf 25 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current3 IS 48 A Forward Voltage1 VSD IF = 20A, VGS = 0V 1.2 V Reverse Recovery Time trr IF = 20A, dlF/dt = 100A / S 21 nS Reverse Recovery Charge Qrr 9 nC 1Pulse test : Pulse Width  300 sec, Duty Cycle  2％. 2Independent of operating temperature. 3Package limitation current is 20A

REV 1.0 E-09-2 N-Channel Enhancement Mode Field Effect Transistor PD636BA TO-252 Halogen-Free & Lead-Free NIKO-SEM VGS, Gate-To-Source Voltage(V) Capacitance Characteristic Qg , Total Gate Charge(nC) Source-Drain Diode Forward Voltage VSD, Source-To-Drain Voltage(V) On-Resistance VS Temperature Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VDS, Drain-To-Source Voltage(V) Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) Gate charge Characteristics Characteristics VGS , Gate-To-Source Voltage(V) IS , Source Current(A) 0 4 8 12 16 20 VDS=15V ID=20A CISS COSS CRSS 100 200 300 400 500 600 700 800 900 1000 0 5 10 15 20 25 30 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=20A 0 1 2 3 4 5 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V VGS=4V VGS=3V VGS=3.5V 0 1 2 3 4 5 25℃ 150℃ 0.1 100 25℃ 125℃ -20℃

REV 1.0 E-09-2 N-Channel Enhancement Mode Field Effect Transistor PD636BA TO-252 Halogen-Free & Lead-Free NIKO-SEM Safe Operating Area Single Pulse Maximum Power Dissipation Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration[sec] ID , Drain Current(A) Power(W) single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJC = 3.3 ℃/W 3.TJ-TC = P*RthJC(t) 4.RthJC(t) = r(t)*RthJC 100 120 140 160 180 0.001 0.01 0.1 1 10 100 Single Pulse RθJC = 3.3˚C/W TC=25˚C DC 100ms 10ms 1ms 100 1000 0.1 1 10 100 NOTE : 1.VGS= 10V 2.TC=25˚C 3.RθJC = 3.3˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON)