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REV1.1 G-36-5 N-Channel Enhancement Mode Field Effect Transistor PD632BA TO-252 Halogen-Free & Lead-Free NIKO-SEM PRODUCT SUMMARY V(BR)DSS R DS(ON) I D 30V 3.7mΩ 105A ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage V DS 30 V Gate-Source Voltage V GS ±20 V Continuous Drain Current2 TC = 25 °C ID 105 A TC = 100 °C 66 Pulsed Drain Current1 I DM 200 Avalanche Current I AS 40 Avalanche Energy L = 0.1mH E AS 80 mJ Power Dissipation TC = 25 °C PD 73 W TC = 100 °C 29 Junction & Storage Temperature Range T J, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case RJC 1.7 °C / W Junction-to-Ambient RJA 62.5 1Pulse width limited by maximum junction temperature. 2Package limitation current is 55A ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITMIN TYP MAX STATIC Drain-Source Breakdown Voltage V (BR)DSS VGS = 0V, ID = 250A 30 V Gate Threshold Voltage V GS(th) VDS = VGS, ID = 250A 1.3 1.7 2.3 Gate-Body Leakage I GSS V DS = 0V, VGS = ±20V ±100 nA Zero Gate Voltage Drain Current I DSS VDS = 24V, VGS = 0V 1 VDS = 20V, VGS = 0V, TJ = 125 °C 10 Drain-Source On-State Resistance1 RDS(ON) VGS = 4.5V, ID = 30A 3.4 4.8 mΩVGS = 10V , ID = 40A 2.8 3.7 1. GATE 2. DRAIN 3. SOURCE G D S
REV1.1 G-36-5 N-Channel Enhancement Mode Field Effect Transistor PD632BA TO-252 Halogen-Free & Lead-Free NIKO-SEM Forward Transconductance1 g fs V DS = 5V, ID = 40A 70 S DYNAMIC Input Capacitance C iss VGS = 0V, VDS = 15V, f = 1MHz 2189 pFOutput Capacitance C oss 390 Reverse Transfer Capacitance C rss 234 Gate Resistance R g V GS = 0V, VDS = 0V, f = 1MHz 1.4 Ω Total Gate Charge2 Qg(VGS=10V) VDS = 15V , ID = 20A 44.2 nC Qg(VGS=4.5V) 23.1 Gate-Source Charge2 Q gs 5.6 Gate-Drain Charge2 Q gd 10.7 Turn-On Delay Time2 t d(on) VDS = 15V ID 20A, VGS = 10V, RGEN =6Ω nS Rise Time2 t r 15 Turn-Off Delay Time2 t d(off) 54 Fall Time2 t f 17 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current3 I S 105 A Forward Voltage1 V SD I F = 40A, VGS = 0V 1 V Reverse Recovery Time t rr IF = 20A, dlF/dt = 100A / S 25 nS Reverse Recovery Charge Q rr 11 nC 1Pulse test : Pulse Width 300 sec, Duty Cycle 2％. 2Independent of operating temperature. 3Package limitation current is 55A
REV1.1 G-36-5 N-Channel Enhancement Mode Field Effect Transistor PD632BA TO-252 Halogen-Free & Lead-Free NIKO-SEM VGS, Gate-To-Source Voltage(V) Capacitance Characteristic Qg , Total Gate Charge(nC) Source-Drain Diode Forward Voltage VSD, Source-To-Drain Voltage(V) On-Resistance VS Temperature 012345 25℃ 150℃ 0.1 100 Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VDS, Drain-To-Source Voltage(V) Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) Gate charge Characteristics VGS , Gate-To-Source Voltage(V) IS , Source Current(A) 25℃ 125℃ ‐20℃ 012345 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V VGS=4V VGS=3.5V VGS=3V VGS=2.5V 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=20A CISS COSS CRSS 500 1000 1500 2000 2500 3000 0 5 10 15 20 25 30 0 9 18 27 36 45 VDS=15V ID=20A
REV1.1 G-36-5 N-Channel Enhancement Mode Field Effect Transistor PD632BA TO-252 Halogen-Free & Lead-Free NIKO-SEM Safe Operating Area Single Pulse Maximum Power Dissipation Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance DC 100ms 10ms 1ms 100 1000 0.1 1 10 100 NOTE : 1.VGS= 10V 2.TC=25˚C 3.RθJC = 1.7˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) ID , Drain Current(A) Power(W) T1 , Square Wave Pulse Duration[sec] 100 150 200 250 300 350 400 0.001 0.01 0.1 1 10 100 Single Pulse RθJC = 1.7˚C/W TC=25˚C single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJC = 1.7 ℃/W 3.TJ-TC = P*RthJC(t) 4.RthJC(t) = r(t)*RthJC