PD618BA NIKOSEM | Alldatasheet

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REV 1.0 D-37-2 N-Channel Enhancement Mode Field Effect Transistor PD618BA TO-252 Halogen-Free & Lead-Free NIKO-SEM ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current2 TC = 25 °C ID A TC = 100 °C 46 Pulsed Drain Current1 IDM 150 Avalanche Current IAS 31 Avalanche Energy L = 0.1mH EAS 48 mJ Power Dissipation TC = 25 °C PD 54 W TC = 100 °C 21 Junction & Storage Temperature Range TJ, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case RJC 2.3 °C / W Junction-to-Ambient RJA 62.5 1Pulse width limited by maximum junction temperature. 2Package limitation current is 40A ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 30 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 1.3 1.7 2.3 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = 24V, VGS = 0V 1 VDS = 20V, VGS = 0V, TJ = 125 °C 10 Drain-Source On-State Resistance1 RDS(ON) VGS = 4.5V, ID = 15A 4.3 8 mΩ VGS = 10V , ID = 20A 3.3 5.5 1. GATE 2. DRAIN 3. SOURCE PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 30V 5.5mΩ 74A G D S

REV 1.0 D-37-2 N-Channel Enhancement Mode Field Effect Transistor PD618BA TO-252 Halogen-Free & Lead-Free NIKO-SEM Forward Transconductance1 gfs VDS = 5V, ID = 20A 60 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = 15V, f = 1MHz 1435 pF Output Capacitance Coss 259 Reverse Transfer Capacitance Crss 162 Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 1.3 Ω Total Gate Charge2 Qg(VGS=10V) VDS = 15V , ID = 20A 28.3 nC Qg(VGS=4.5V) 15.4 Gate-Source Charge2 Qgs 3.5 Gate-Drain Charge2 Qgd 7.7 Turn-On Delay Time2 td(on) VDS = 15V ID  20A, VGS = 10V, RGEN =6Ω nS Rise Time2 tr 25 Turn-Off Delay Time2 td(off) 70 Fall Time2 tf 25 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current3 IS 45 A Forward Voltage1 VSD IF = 20A, VGS = 0V 1.2 V Reverse Recovery Time trr IF = 20A, dlF/dt = 100A / S 24 nS Reverse Recovery Charge Qrr 11 nC 1Pulse test : Pulse Width  300 sec, Duty Cycle  2%. 2Independent of operating temperature. 3Package limitation current is 40A

REV 1.0 D-37-2 N-Channel Enhancement Mode Field Effect Transistor PD618BA TO-252 Halogen-Free & Lead-Free NIKO-SEM 25℃ 150℃ 0.1 100 0 6 12 18 24 30 VDS=15V ID=20A CISS COSS CRSS 200 400 600 800 1000 1200 1400 1600 0 5 10 15 20 25 30 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=20A 0 1 2 3 4 5 6 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V VGS=3V VGS=2.5V 25℃ 125℃ -20℃ 0 1 2 3 4 5 VGS, Gate-To-Source Voltage(V) Capacitance Characteristic Qg , Total Gate Charge(nC) Source-Drain Diode Forward Voltage VSD, Source-To-Drain Voltage(V) On-Resistance VS Temperature Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VDS, Drain-To-Source Voltage(V) Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) Gate charge Characteristics Characteristics VGS , Gate-To-Source Voltage(V) IS , Source Current(A)

REV 1.0 D-37-2 N-Channel Enhancement Mode Field Effect Transistor PD618BA TO-252 Halogen-Free & Lead-Free NIKO-SEM single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJC = 2.3 ℃/W 3.TJ-TC = P*RthJC(t) 4.RthJC(t) = r(t)*RthJC 120 180 240 300 0.001 0.01 0.1 1 10 100 Single Pulse RθJC = 2.3 ˚C/W TC=25˚C DC 100ms 10ms 1ms 100 1000 0.1 1 10 100 NOTE : 1.VGS= 10V 2.TC=25˚C 3.RθJC = 2.3 ˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) Safe Operating Area Single Pulse Maximum Power Dissipation Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance ID , Drain Current(A) Power(W) T1 , Square Wave Pulse Duration[sec]