PD609CX NIKOSEM | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 7

Technical content

Features

  • Pb−Free, Halogen Free and RoHS compliant.
  • Low RDS(on) to Minimize Conduction Losses.
  • Ohmic Region Good RDS(on) Ratio.
  • Optimized Gate Charge to Minimize Switching Losses.

Applications

  • Protection Circuits Applications.
  • Logic/Load Switch Circuits Applications.
  • DC Motor for BLDC Applications. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Q2 Q1 UNITS Drain-Source Voltage VDS -40 40 V Gate-Source Voltage VGS ±20 ±20 V Continuous Drain Current2 TC = 25 °C ID -17 22.5 A TC = 100 °C -11 14 Pulsed Drain Current1 IDM -56 60 Avalanche Current IAS -21 14 Avalanche Energy L = 0.1mH EAS 22 9.8 mJ Power Dissipation TC = 25 °C PD 34 26.5 W TC = 100 °C 13.8 10.6 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C PRODUCT SUMMARY V(BR)DSS RDS(ON) ID Q2 -40V 60mΩ -17A Q1 40V 25mΩ 22.5A G. GATE D. DRAIN S. SOURCE

REV1.0 H-29-5 N- & P-Channel Enhancement Mode Field Effect Transistor PD609CX TO-252-5 Halogen-Free & Lead-Free NIKO-SEM THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient RJA Q2 62.5 °C / W Q1 62.5 Junction-to-Case RJC Q2 3.6 Q1 4.7 1Pulse width limited by maximum junction temperature. 2Package limitation current :Q1=15A,Q2=-15A ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250A Q2 -40 V VGS = 0V, ID = 250A Q1 40 Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250A Q2 -1.3 -1.85 -2.3 VDS = VGS, ID = 250A Q1 1.3 1.6 2.3 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V Q2 ±100 nA VDS = 0V, VGS = ±20V Q1 ±100 Zero Gate Voltage Drain Current IDSS VDS = -32V, VGS = 0V Q2 -1 VDS = 32V, VGS = 0V Q1 1 VDS = -30, VGS = 0V, TJ = 55 °C Q2 -10 VDS = 30V, VGS = 0V, TJ = 55 °C Q1 10 Drain-Source On-State Resistance1 RDS(ON) VGS = -4.5V, ID = -4A Q2 57 90 mΩ VGS = 4.5V, ID = 6A Q1 21 35 VGS = -10V, ID = -4A Q2 36 60 VGS = 10V, ID = 6A Q1 18 25 Forward Transconductance1 gfs VDS = -5V, ID = -4A Q2 10 S VDS = 5V, ID = 6A Q1 27 DYNAMIC Input Capacitance Ciss Q2 VGS = 0V, VDS = -20V, f = 1MHz VGS = 0V, VDS = 20V, f = 1MHz Q2 538 pF Q1 460 Output Capacitance Coss Q2 127 Q1 66 Reverse Transfer Capacitance Crss Q2 73 Q1 39 Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz Q2 14 Ω Q1 4.6

REV1.0 H-29-5 N- & P-Channel Enhancement Mode Field Effect Transistor PD609CX TO-252-5 Halogen-Free & Lead-Free NIKO-SEM Total Gate Charge2 Qg VGS = 10V VDS = -20V , VGS = -10V, ID = -4A VDS = 20V , VGS = 10V, ID =6A Q2 11.6 nC Q1 9.9 VGS = 4.5V Q2 6.5 Q1 5.6 Gate-Source Charge2 Qgs Q2 1.5 Q1 1.3 Gate-Drain Charge2 Qgd Q2 3.3 Q1 2.6 Turn-On Delay Time2 td(on) Q2 , VDS = -20V , ID  -4A, VGS = -10V, RGEN =6Ω Q1 , VDS = 20V , ID  6A, VGS = 10V, RGEN =6Ω Q2 11 nS Q1 9.5 Rise Time2 tr Q2 26 Q1 37 Turn-Off Delay Time2 td(off) Q2 54 Q1 24 Fall Time2 tf Q2 47 Q1 63 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current3 IS Q2 -17 A Q1 22 Forward Voltage1 VSD IF = -4A, VGS = 0V Q2 -1.2 V IF = 6A, VGS = 0V Q1 1.2 Reverse Recovery Time trr Q2 IF = -4A, dlF/dt = 100A / S IF = 6A, dlF/dt = 100A / S Q2 12 nS Q1 10 Reverse Recovery Charge Qrr Q2 6 nC Q1 5 1Pulse test : Pulse Width  300 sec, Duty Cycle  2％. 2Independent of operating temperature. 3Package limitation current :Q1=15A,Q2=-15A

REV1.0 H-29-5 N- & P-Channel Enhancement Mode Field Effect Transistor PD609CX TO-252-5 Halogen-Free & Lead-Free NIKO-SEM Output Characteristics Transfer Characteristics -VGS, Gate-To-Source Voltage(V) -VDS, Drain-To-Source Voltage(V) -VGS , Gate-To-Source Voltage(V) Gate charge Characteristics Characteristics Capacitance Characteristic C , Capacitance(pF) -VDS, Drain-To-Source Voltage(V) Qg , Total Gate Charge(nC) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) -ID , Drain-To-Source Current(A) On-Resistance VS Gate-To-Source Voltage RDS(ON)ON-Resistance(OHM) -VGS, Gate-To-Source Voltage(V) 0 1 2 3 4 5 6 VGS=-10V VGS=-9V VGS=-8V VGS=-7V VGS=-6V VGS=-5V VGS=-4.5V VGS=-3V VGS=-3.3V VGS=-4.7V 25℃ 125℃ -20℃ 0 1 2 3 4 5 6 0.05 0.1 0.15 0.2 0.25 0 4 8 12 16 20 VGS=-10V VGS=-4.5V 0.04 0.08 0.12 0.16 0.2 2 4 6 8 10 ID=-4A CISS COSS CRSS 100 200 300 400 500 600 700 0 5 10 15 20 25 30 0 3 6 9 12 15 VDS=-20V ID=-4A Typical performance characteristics Q2 P-Channel -ID, Drain-To-Source Current(A) -ID, Drain-To-Source Current(A)

REV1.0 H-29-5 N- & P-Channel Enhancement Mode Field Effect Transistor PD609CX TO-252-5 Halogen-Free & Lead-Free NIKO-SEM Source-Drain Diode Forward Voltage Normalized Drain to Source ON-Resistance -IS , Source Current(A) TJ , Junction Temperature(˚C) -VSD, Source-To-Drain Voltage(V) Single Pulse Maximum Power Dissipation Safe Operating Area Single Pulse Time(s) -VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance On-Resistance VS Temperature 25℃ 125℃ 100 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 VGS=-10V ID=-4A 120 180 240 300 0.001 0.01 0.1 1 10 100 Single Pulse RθJC = 3.6 ˚C/W TC = 25˚C DC 100ms 10ms 1ms 0.1 100 1 10 100 NOTE : 1.VGS = -10V 2.TC =25˚C 3.RθJC = 3.6 ˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJC = 3.6 ℃/W 3.TJ-TC = P*RthJC(t) 4.RthJC(t) = r(t)*RthJC -ID , Drain Current(A) Power(W) T1 , Square Wave Pulse Duration[sec]

REV1.0 H-29-5 N- & P-Channel Enhancement Mode Field Effect Transistor PD609CX TO-252-5 Halogen-Free & Lead-Free NIKO-SEM 0 2 4 6 8 10 VDS=20V ID=6A Output Characteristics Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) Capacitance Characteristic VDS, Drain-To-Source Voltage(V) Gate charge Characteristics Characteristics Qg , Total Gate Charge(nC) On-Resistance VS Drain Current ID , Drain-To-Source Current(A) On-Resistance VS Gate-To-Source Voltage VGS, Gate-To-Source Voltage(V) 0 1 2 3 4 5 6 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V VGS=3V VGS=2.8V VGS=2.6V 0.02 0.04 0.06 0.08 0.1 2 4 6 8 10 ID=6A 0.01 0.02 0.03 0.04 0.05 0 3 6 9 12 15 VGS=10V VGS=4.5V 25℃ 125℃ -20℃ 0 1 2 3 4 5 CISS COSS CRSS 100 200 300 400 500 600 0 5 10 15 20 25 30 Q1 N- Channel ID, Drain-To-Source Current(A) C , Capacitance(pF) VGS , Gate-To-Source Voltage(V) RDS(ON)ON-Resistance(OHM) RDS(ON)ON-Resistance(OHM)

REV1.0 H-29-5 N- & P-Channel Enhancement Mode Field Effect Transistor PD609CX TO-252-5 Halogen-Free & Lead-Free NIKO-SEM Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Source-Drain Diode Forward Voltage Safe Operating Area Single Pulse Maximum Power Dissipation Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration(sec) VSD, Source-To-Drain Voltage(V) On-Resistance VS Temperature 25℃ 150℃ 0.1 100 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=6A DC 100ms 10ms 1ms 0.1 100 1 10 100 NOTE : 1.VGS = 10V 2.TC =25˚C 3.RθJC = 4.7 ˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) 120 150 0.001 0.01 0.1 1 10 100 Single Pulse RθJC = 4.7 ˚C/W TC = 25˚C single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJC = 4.7 ℃/W 3.TJ-TC = P*RthJC(t) 4.RthJC(t) = r(t)*RthJC IS , Source Current(A) ID , Drain Current(A) Power(W)