PD5P8BA NIKOSEM | Alldatasheet

Document overview

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Technical content

Features

  • Pb−Free, Halogen Free and RoHS compliant.
  • Low RDS(on) to Minimize Conduction Losses.
  • Ohmic Region Good RDS(on) Ratio.
  • Optimized Gate Charge to Minimize Switching Losses.

Applications

  • Protection Circuits Applications.
  • Logic/Load Switch Circuits Applications. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±12 V Continuous Drain Current TC = 25 °C ID A TC = 100 °C 21 Pulsed Drain Current1 IDM 70 Avalanche Current IAS 17.8 Avalanche Energy L = 0.1mH EAS 15.8 mJ Power Dissipation TC = 25 °C PD 25 W TC = 100 °C 10 Junction & Storage Temperature Range TJ, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case RJC 5 °C / W Junction-to-Ambient RJA 62.5 1Pulse width limited by maximum junction temperature. 1. GATE 2. DRAIN 3. SOURCE PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20V 12mΩ 34A

REV1.0 H-44-2 N-Channel Enhancement Mode Field Effect Transistor PD5P8BA TO-252 Halogen-Free & Lead-Free NIKO-SEM ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 20 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 0.45 0.8 1.25 Gate-Body Leakage IGSS VDS = 0V, VGS = ±12V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = 16V, VGS = 0V 1 VDS = 10V, VGS = 0V, TJ = 125 °C 10 Drain-Source On-State Resistance1 RDS(ON) VGS = 10V , ID = 20A 7.9 12 mΩ VGS = 4.5V, ID = 18A 9.3 14 VGS = 2.5V, ID = 9A 13.4 28 Forward Transconductance1 gfs VDS = 5V, ID = 20A 36 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = 10V, f = 1MHz 718 pF Output Capacitance Coss 149 Reverse Transfer Capacitance Crss 122 Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 2.2 Ω Total Gate Charge2 Qg(VGS=10V) VDS = 10V , ID = 20A nC Qg(VGS=4.5V) 10 Gate-Source Charge2 Qgs 1.1 Gate-Drain Charge2 Qgd 4.3 Turn-On Delay Time2 td(on) VDS = 10V ID  20A, VGS = 10V, RGEN =6Ω 8.8 nS Rise Time2 tr 112 Turn-Off Delay Time2 td(off) 38 Fall Time2 tf 132 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current IS 19 A Forward Voltage1 VSD IF = 10A, VGS = 0V 1.3 V Reverse Recovery Time trr IF = 10A, dlF/dt = 100A / S 10 nS Reverse Recovery Charge Qrr 3.1 nC 1Pulse test : Pulse Width  300 sec, Duty Cycle  2％. 2Independent of operating temperature.

REV1.0 H-44-2 N-Channel Enhancement Mode Field Effect Transistor PD5P8BA TO-252 Halogen-Free & Lead-Free NIKO-SEM Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Capacitance Characteristic C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) On-Resistance VS Temperature On-Resistance VS Gate-To-Source Voltage RDS(ON)ON-Resistance(OHM) VGS, Gate-To-Source Voltage(V) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) ID , Drain-To-Source Current(A) 0 1 2 3 4 5 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V VGS=2.5V VGS=1.9V VGS=1.5V VGS=1.7V 0.01 0.02 0.03 0.04 0.05 0 6 12 18 24 30 VGS=10V VGS=4.5V VGS=2.5V 0.02 0.04 0.06 0.08 0.1 0 2 4 6 8 10 ID=20A 25℃ 125℃ -20℃ 0 1 2 3 4 CISS COSS CRSS 100 200 300 400 500 600 700 800 900 0 5 10 15 20 25 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=20A

REV1.0 H-44-2 N-Channel Enhancement Mode Field Effect Transistor PD5P8BA TO-252 Halogen-Free & Lead-Free NIKO-SEM Gate charge Characteristics Characteristics Qg , Total Gate Charge(nC) VGS , Gate-To-Source Voltage(V) Source-Drain Diode Forward Voltage VSD, Source-To-Drain Voltage(V) IS , Source Current(A) Safe Operating Area Single Pulse Maximum Power Dissipation ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration(S) 0 4 8 12 16 20 VDS=10V ID=20A 25℃ 150℃ 0.1 100 DC 100ms 10ms 1ms 100 0.1 1 10 100 NOTE : 1.VGS = 10V 2.TC =25˚C 3.RθJC = 5 ˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) 100 0.001 0.01 0.1 1 10 100 Single Pulse RθJC = 5 ˚C/W TC = 25˚C single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJC = 5 ℃/W 3.TJ-TC = P*RthJC(t) 4.RthJC(t) = r(t)*RthJC