PD5C9BA NIKOSEM | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
Features
- Pb−Free, Halogen Free and RoHS compliant.
- Low RDS(on) to Minimize Conduction Losses.
- Ohmic Region Good RDS(on) Ratio.
- Optimized Gate Charge to Minimize Switching Losses.
Applications
- Protection Circuits Applications.
- Logic/Load Switch Circuits Applications. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS -40 V Gate-Source Voltage VGS ±20 V Continuous Drain Current TC = 25 °C ID -19 A TC = 100 °C -12 Pulsed Drain Current1 IDM -50 Avalanche Current IAS 20 Avalanche Energy L = 0.1mH EAS 20 mJ Power Dissipation TC = 25 °C PD 31 W TC = 100 °C 12 Junction & Storage Temperature Range TJ, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case RJC 4 °C / W Junction-to-Ambient RJA 62.5 1Pulse width limited by maximum junction temperature. PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -40V 44mΩ -19A 1. GATE 2. DRAIN 3. SOURCE
REV1.0 H-50-3 P-Channel Enhancement Mode Field Effect Transistor PD5C9BA TO-252 Halogen-Free & Lead-Free NIKO-SEM ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250A -40 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250A -1.3 -1.85 -2.5 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = -32V, VGS = 0V -1 VDS = -30V, VGS = 0V, TJ = 125 °C -10 Drain-Source On-State Resistance1 RDS(ON) VGS = -4.5V, ID = -8A 46 68 mΩ VGS = -10V, ID = -10A 31 44 Forward Transconductance1 gfs VDS = -5V, ID = -10A 17.5 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = -20V, f = 1MHz 777 pF Output Capacitance Coss 103 Reverse Transfer Capacitance Crss 79 Gate Resistance Rg VGS =0V, VDS = 0V, f = 1MHz 5.5 Ω Total Gate Charge2 Qg (VGS=-10V) VDS = -20V , VGS = -10V, ID = -10A 16.2 nC Qg(VGS=-4.5V) 8.8 Gate-Source Charge2 Qgs 2.2 Gate-Drain Charge2 Qgd 4.4 Turn-On Delay Time2 td(on) VDS = -20V , ID -10A, VGS = -10V, RGEN =6Ω nS Rise Time2 tr 50 Turn-Off Delay Time2 td(off) 47 Fall Time2 tf 64 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current IS -19 A Forward Voltage1 VSD IF = -10A, VGS = 0V -1.3 V Reverse Recovery Time trr IF = -10A, dlF/dt = 100A / S 16 nS Reverse Recovery Charge Qrr 8.1 nC 1Pulse test : Pulse Width 300 sec, Duty Cycle 2%. 2Independent of operating temperature.
REV1.0 H-50-3 P-Channel Enhancement Mode Field Effect Transistor PD5C9BA TO-252 Halogen-Free & Lead-Free NIKO-SEM 0.02 0.04 0.06 0.08 0.1 0 4 8 12 16 20 VGS=-10V VGS=-4.5V Output Characteristics -ID, Drain-To-Source Current(A) Transfer Characteristics -ID, Drain-To-Source Current(A) -VGS, Gate-To-Source Voltage(V) -VDS, Drain-To-Source Voltage(V) Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Capacitance Characteristic C , Capacitance(pF) -VDS, Drain-To-Source Voltage(V) On-Resistance VS Temperature On-Resistance VS Gate-To-Source Voltage RDS(ON)ON-Resistance(OHM) -VGS, Gate-To-Source Voltage(V) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) -ID , Drain-To-Source Current(A) 0 1 2 3 4 5 6 VGS=-10V VGS=-9V VGS=-8V VGS=-7V VGS=-6V VGS=-5V VGS=-4.5V VGS=-4V VGS=-3.4V VGS=-2.8V 0.02 0.04 0.06 0.08 0.1 2 4 6 8 10 ID=-10A 25℃ 125℃ -20℃ 0 1 2 3 4 5 CISS COSS CRSS 100 200 300 400 500 600 700 800 900 1000 0 5 10 15 20 25 30 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 VGS=-10V ID=-10A c
REV1.0 H-50-3 P-Channel Enhancement Mode Field Effect Transistor PD5C9BA TO-252 Halogen-Free & Lead-Free NIKO-SEM Gate charge Characteristics Characteristics Qg , Total Gate Charge(nC) -VGS , Gate-To-Source Voltage(V) Source-Drain Diode Forward Voltage -VSD, Source-To-Drain Voltage(V) -IS , Source Current(A) Safe Operating Area Single Pulse Maximum Power Dissipation -ID , Drain Current(A) Power(W) Single Pulse Time(s) -VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration[sec] 0 4 8 12 16 20 VDS=-20V ID=-10A 25℃ 125℃ 100 120 160 200 0.001 0.01 0.1 1 10 100 Single Pulse RθJC = 4 ˚C/W TC = 25˚C DC 100ms 10ms 1ms 0.1 100 1 10 100 NOTE : 1.VGS = 10V 2.TC =25˚C 3.RθJC = 4 ˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJC = 4 ℃/W 3.TJ-TC = P*RthJC(t) 4.RthJC(t) = r(t)*RthJC