PD533BA NIKOSEM | Alldatasheet
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REV 1.2 F-11-2 P-Channel Enhancement Mode Field Effect Transistor PD533BA TO-252 Halogen-Free & Lead-Free NIKO-SEM ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS -40 V Gate-Source Voltage VGS ±25 V Continuous Drain Current2 TC = 25 °C ID -51 A TC = 100 °C -40 Pulsed Drain Current1 IDM -150 Avalanche Current IAS -38 Avalanche Energy L = 0.1mH EAS 72.2 mJ Power Dissipation TC = 25 °C PD 65 W TC = 100 °C 42 Junction & Storage Temperature Range TJ, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case RJC 1.9 °C / W Junction-to-Ambient RJA 62.5 1Pulse width limited by maximum junction temperature. 2Package limitation current is -40A. ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250A -40 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250A -1 -1.8 -3 Gate-Body Leakage IGSS VDS = 0V, VGS = ±25V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = -32V, VGS = 0V -1 VDS = -30V, VGS = 0V, TJ = 125 °C -10 PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -40V 14mΩ -51A G S D 1. GATE 2. DRAIN 3. SOURCE
REV 1.2 F-11-2 P-Channel Enhancement Mode Field Effect Transistor PD533BA TO-252 Halogen-Free & Lead-Free NIKO-SEM Drain-Source On-State Resistance1 RDS(ON) VGS = -4.5V, ID = -15A 14 20 mΩ VGS = -10V, ID = -20A 10 14 Forward Transconductance1 gfs VDS = -5V, ID = -20A 50 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = -20V, f = 1MHz 2670 pF Output Capacitance Coss 313 Reverse Transfer Capacitance Crss 222 Gate Resistance Rg VGS =0V, VDS = 0V, f = 1MHz 4.5 Ω Total Gate Charge2 Qg (VGS=-10V) VDS = -20V , ID = -20A nC Qg(VGS=-4.5V) 29 Gate-Source Charge2 Qgs 9 Gate-Drain Charge2 Qgd 14 Turn-On Delay Time2 td(on) VDS = -20V , ID -20A, VGS = -10V, RGEN =6Ω nS Rise Time2 tr 20 Turn-Off Delay Time2 td(off) 90 Fall Time2 tf 41 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current3 IS -50 A Forward Voltage1 VSD IF = -20A, VGS = 0V -1.3 V Reverse Recovery Time trr IF = -20A, dlF/dt = 100A / S 17 nS Reverse Recovery Charge Qrr 6 nC 1Pulse test : Pulse Width 300 sec, Duty Cycle 2%. 2Independent of operating temperature. 3Package limitation current is -40A.
REV 1.2 F-11-2 P-Channel Enhancement Mode Field Effect Transistor PD533BA TO-252 Halogen-Free & Lead-Free NIKO-SEM CISS COSS CRSS 500 1000 1500 2000 2500 3000 3500 0 5 10 15 20 25 30 0 1 2 3 4 5 0 10 20 30 40 50 60 VDS=-20V ID=-20A 0 1 2 3 4 5 VGS=-10V VGS=-9V VGS=-8V VGS=-7V VGS=-6V VGS=-5V VGS=-4.5V VGS=-4V VGS=-3.5V VGS=-3V 0.03 0.06 0.09 0.12 0.15 2 4 6 8 10 ID=-20A On-Resistance VS Gate-To-Source Voltage RDS(ON)ON-Resistance(OHM) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) -ID , Drain-To-Source Current(A) -VGS, Gate-To-Source Voltage(V) Output Characteristics -ID, Drain-To-Source Current(A) Transfer Characteristics -ID, Drain-To-Source Current(A) -VGS, Gate-To-Source Voltage(V) -VDS, Drain-To-Source Voltage(V) Capacitance Characteristic C , Capacitance(pF) -VDS, Drain-To-Source Voltage(V) Gate charge Characteristics Characteristics -VGS , Gate-To-Source Voltage(V) Qg , Total Gate Charge(nC) 25℃ 125℃ -20℃ 0.005 0.01 0.015 0.02 0 8 16 24 32 40 VGS=-10V VGS=-4.5V
REV 1.2 F-11-2 P-Channel Enhancement Mode Field Effect Transistor PD533BA TO-252 Halogen-Free & Lead-Free NIKO-SEM DC 100ms 10ms 1ms 100uS 100 1000 1 10 100 NOTE : 1.VGS= 10V 2.TC=25˚C 3.RθJC = 1.9˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 VGS=-10V ID=-20A 25℃ 150℃ 0.1 100 On-Resistance VS Temperature Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Source-Drain Diode Forward Voltage -IS , Source Current(A) Safe Operating Area Single Pulse Maximum Power Dissipation -ID , Drain Current(A) Power(W) Single Pulse Time(s) -VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration[sec] -VSD, Source-To-Drain Voltage(V) 100 150 200 250 300 350 400 0.001 0.01 0.1 1 10 100 Single Pulse RθJC = 1.9˚C/W TC=25˚C single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJC = 1.9 ℃/W 3.TJ-TC = P*RthJC(t) 4.RthJC(t) = r(t)*RthJC